J. Semicond. > Volume 41 > Issue 1 > Article Number: 011301

Boron-doped III–V semiconductors for Si-based optoelectronic devices

Chao Zhao 1, 2, 3, 4, , , Bo Xu 3, 4, , Zhijie Wang 3, 4, , and Zhanguo Wang 3, 4,

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Abstract: Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although heterogeneous integration of III–V semiconductors on Si has been well-developed, the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices. The monolithic growth of III–V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers. On the other hand, the growth of lattice-matched B-doped group-III–V materials is an attractive area of research. However, due to the difficulty in growth, the development is still relatively slow. Herein, we present a comprehensive review of the recent achievements in this field. We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III–V materials. The unique surface morphology, crystallinity, and optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective optoelectronic applications. Finally, we detail the obstacles and challenges to exploit the potential for such practical applications fully.

Key words: BGaAsSiphotodetectorepitaxy

Abstract: Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although heterogeneous integration of III–V semiconductors on Si has been well-developed, the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices. The monolithic growth of III–V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers. On the other hand, the growth of lattice-matched B-doped group-III–V materials is an attractive area of research. However, due to the difficulty in growth, the development is still relatively slow. Herein, we present a comprehensive review of the recent achievements in this field. We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III–V materials. The unique surface morphology, crystallinity, and optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective optoelectronic applications. Finally, we detail the obstacles and challenges to exploit the potential for such practical applications fully.

Key words: BGaAsSiphotodetectorepitaxy



References:

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[3]

Zhao C, Ebaid M, Zhang H, et al. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters. Nanoscale, 2018, 10, 15980

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Zhao C, Alfaraj N, Subedi R C, et al. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications. Prog Quantum Electron, 2018, 61, 1

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Janjua B, Sun H, Zhao C, et al. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. Nanoscale, 2017, 9, 7805

[6]

Ebaid M, Priante D, Liu G, et al. Unbiased photocatalytic hydrogen generation from pure water on stable Ir-treated In0.33Ga0.67N nanorods. Nano Energy, 2017, 37, 158

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Zhao C, Chen Y H, Xu B, et al. Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy. Appl Phys Lett, 2008, 92, 063122

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Zhao C, Chen Y H, Xu B, et al. Evolution of InAs nanostructures grown by droplet epitaxy. Appl Phys Lett, 2007, 91, 033112

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Siddiqi G, Pan Z, Hu S. III–V semiconductor photoelectrodes. Semiconductors and Semimetals, 2017, 81

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Caro Bayo M Á. Theory of elasticity and electric polarization effects in the group-III nitrides. PhD Dissertation, University College Cork, 2013

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Chen S, Li W, Wu J, et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat Photonics, 2016, 10, 307

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Geisz J F, Friedman D J, Kurtz S, et al. Epitaxial growth of BGaAs and BGaInAs by MOCVD. J Cryst Growth, 2001, 225, 372

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Hart G L W, Zunger A. Electronic structure of BAs and boride III–V alloys. Phys Rev B, 2000, 62, 13522

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Hoke W E. Molecular-beam epitaxial growth of boron-doped GaAs films. J Vac Sci Technol B, 1993, 11, 902

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Gupta V K, Koch M W, Watkins N J, et al. Molecular beam epitaxial growth of BGaAs ternary compounds. J Electron Mater, 2000, 29, 1387

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Tian F, Song B, Chen X, et al. Unusual high thermal conductivity in boron arsenide bulk crystals. Science, 2018, 361, 582

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Li S, Zheng Q, Lv Y, et al. High thermal conductivity in cubic boron arsenide crystals. Science, 2018, 361, 579

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Kang J S, Li M, Wu H, et al. Experimental observation of high thermal conductivity in boron arsenide. Science, 2018, 361, 575

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Detz H, MacFarland D, Zederbauer T, et al. Growth rate dependence of boron incorporation into BxGa1− xAs layers. J Cryst Growth, 2017, 477, 77

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Dumont H, Rutzinger D, Vincent C, et al. Surface segregation of boron in BxGa1− xAs/GaAs epilayers studied by X-ray photoelectron spectroscopy and atomic force microscopy. Appl Phys Lett, 2003, 82, 1830

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Azzi S, Zaoui A, Ferhat M. On the importance of the band gap bowing in boron-based III–V ternary alloys. Solid State Commun, 2007, 144, 245

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Pryakhin D A. Growth of BGaAs layers on GaAs substrates by metal–organic vapor-phase epitaxy. Semiconductors, 2005, 39, 11

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Dumont H, Dazord J, Monteil Y, et al. Growth and characterization of high quality BxGa1− xAs/GaAs(001) epilayers. J Cryst Growth, 2003, 248, 463

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Geisz J F, Friedman D J, Kurtz S, et al. Alternative boron precursors for BGaAs epitaxy. J Electron Mater, 2001, 30, 1387

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Beaton D A, Ptak A J, Alberi K, et al. Quaternary bismide alloy lattice matched to GaAs. J Cryst Growth, 2012, 351, 37

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Ptak A J, Beaton D A, Mascarenhas A. Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant. J Cryst Growth, 2012, 351, 122

[31]

Dumont H, Monteil Y. Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation. J Cryst Growth, 2006, 290, 419

[32]

Saidi F, Hassen F, Maaref H, et al. Optical study of BxGa1− xAs/GaAs epilayers. Mater Sci Engi C, 2006, 26, 236

[33]

Saidi F, Hassen F, Dumont H, et al. Comparative optical study of GaAs1− xNx/GaAs and BxGa1− xAs/GaAs epilayers. IEE Proc - Optoelectron, 2004, 151, 342

[34]

Wang Q, Jia Z, Ren X, et al. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1− xAs/GaAs multiple quantum wells. AIP Adv, 2013, 3, 072111

[35]

Hamila R, Saidi F, Fouzri A, et al. Clustering effects in optical properties of BGaAs/GaAs epilayers. J Lumin, 2009, 129, 1010

[36]

Hamila R, Saidi F, Rodriguez P H, et al. Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD. J Alloys Compnd, 2010, 506, 10

[37]

Saidi F, Hamila R, Maaref H, et al. Structural and optical study of BxInyGa1− x yAs/GaAs and InyGa1− yAs/GaAs QW’s grown by MOCVD. J Alloys Compnd, 2010, 491, 45

[38]

Rodriguez P, Auvray L, Dumont H, et al. Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE. J Cryst Growth, 2007, 298, 81

[39]

Hamila R, Saidi F, Maaref H, et al. Photoluminescence properties and high resolution X-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method. J Appl Phys, 2012, 112, 063109

[40]

Hamila R, Saidi F, Rodriguez P, et al. Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1 eV. Microelectron Eng, 2016, 149, 5

[41]

Hidouri T, Saidi F, Maaref H, et al. Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD. Vacuum, 2016, 132, 10

[42]

Hidouri T, Saidi F, Maaref H, et al. LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs single quantum well. Opt Mater, 2016, 62, 267

[43]

Hidouri T, Saidi F, Maaref H, et al. Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD. Opt Mater, 2016, 60, 487

[44]

Rodriguez P, Auvray L, Favier A, et al. Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy. Thin Solid Films, 2008, 516, 8424

[45]

Ilahi S, Baira M, Saidi F, et al. Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model. J Alloys Compnd, 2013, 581, 358

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Ilahi S, Saidi F, Hamila R, et al. Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys. Curr Appl Phys, 2013, 13, 610

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Ilahi S, Saidi F, Hamila R, et al. Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys. Physica B, 2013, 421, 105

[48]

Wang Q, Ren X, Wang F, et al. LP-MOCVD growth of ternary BxGa1− xAs epilayers on (001)GaAs substrates using TEB, TMGa and AsH3. Microelectron J, 2008, 39, 1678

[49]

Wang Q, Ren X, Huang H, et al. Growth of BxGa1− xAs, BxAl1− xAs and BxGa1− x yInyAs epilayers on (001) GaAs by low pressure metalorganic chemical vapor deposition. Microelectron J, 2009, 40, 87

[50]

Lancaster S, Groiss H, Zederbauer T, et al. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy. Nanotechnology, 2019, 30, 065602

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Brierley S K, Hendriks H T, Hoke W E, et al. Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy. Appl Phys Lett, 1993, 63, 812

[52]

Kley A, Ruggerone P, Scheffler M. Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Phys Rev Letters, 1997, 79, 5278

[53]

Paulus B, Fulde P, Stoll H. Cohesive energies of cubic III-V semiconductors. Phys Rev B, 1996, 54, 2556

[54]

Groenert M E, Averbeck R, Hösler W, et al. Optimized growth of BGaAs by molecular beam epitaxy. J Cryst Growth, 2004, 264, 123

[55]

Lancaster S, Andrews A M, Stoeger-Pollach M, et al. Influence of boron antisite defects on the electrical properties of MBE-grown GaAs nanowires. Phys Status Solidi B, 2019, 256, 1800368

[56]

Bank S R, McNicholas K M, El-Jaroudi R H, et al. Improved MWIR LED arrays on Si substrates for scene projectors. IEEE Research and Applications of Photonics In Defense Conference (RAPID), 2018

[57]

Lindsay A, O’Reilly E P. Theory of electronic structure of BGaAs and related alloys. Phys Status Solidi C, 2008, 5, 454

[58]

Sommer N, Buss R, Ohlmann J, et al. Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE. J Cryst Growth, 2013, 370, 191

[59]

Zhang S B, Zunger A. Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III–V semiconductors. Appl Phys Lett, 1997, 71, 677

[60]

Jenichen A, Engler C. Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density-functional supercell calculations. Phys Status Solidi B, 2007, 244, 1957

[61]

Jenichen A, Engler C. Boron and indium substitution in GaAs (001) surfaces: Density-functional supercell calculations of the surface stability. Surf Sci, 2007, 601, 900

[62]

Jenichen A, Engler C. Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms. J Cryst Growth, 2007, 304, 26

[1]

Janjua B, Ng T K, Zhao C, et al. True yellow light-emitting diodes as phosphor for tunable color-rendering index laser-based white light. ACS Photonics, 2016, 3, 2089

[2]

Zhao C, Ng T K, Tseng C C, et al. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters. RSC Adv, 2017, 7, 26665

[3]

Zhao C, Ebaid M, Zhang H, et al. Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters. Nanoscale, 2018, 10, 15980

[4]

Zhao C, Alfaraj N, Subedi R C, et al. III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications. Prog Quantum Electron, 2018, 61, 1

[5]

Janjua B, Sun H, Zhao C, et al. Self-planarized quantum-disks-in-nanowires ultraviolet-B emitters utilizing pendeo-epitaxy. Nanoscale, 2017, 9, 7805

[6]

Ebaid M, Priante D, Liu G, et al. Unbiased photocatalytic hydrogen generation from pure water on stable Ir-treated In0.33Ga0.67N nanorods. Nano Energy, 2017, 37, 158

[7]

Zhao C, Chen Y H, Xu B, et al. Study of the wetting layer of InAs/GaAs nanorings grown by droplet epitaxy. Appl Phys Lett, 2008, 92, 063122

[8]

Zhao C, Chen Y H, Xu B, et al. Evolution of InAs nanostructures grown by droplet epitaxy. Appl Phys Lett, 2007, 91, 033112

[9]

Siddiqi G, Pan Z, Hu S. III–V semiconductor photoelectrodes. Semiconductors and Semimetals, 2017, 81

[10]

Caro Bayo M Á. Theory of elasticity and electric polarization effects in the group-III nitrides. PhD Dissertation, University College Cork, 2013

[11]

Roelkens G, Liu L, Liang D, et al. III–V/silicon photonics for on-chip and intra-chip optical interconnects. Laser Photonics Rev, 2010, 4, 751

[12]

Chen S, Li W, Wu J, et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat Photonics, 2016, 10, 307

[13]

Tischler M A, Mooney P M, Parker B D, et al. Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As. J Appl Phys, 1992, 71, 984

[14]

Geisz J F, Friedman D J, Kurtz S, et al. Epitaxial growth of BGaAs and BGaInAs by MOCVD. J Cryst Growth, 2001, 225, 372

[15]

Hart G L W, Zunger A. Electronic structure of BAs and boride III–V alloys. Phys Rev B, 2000, 62, 13522

[16]

Hoke W E. Molecular-beam epitaxial growth of boron-doped GaAs films. J Vac Sci Technol B, 1993, 11, 902

[17]

Gupta V K, Koch M W, Watkins N J, et al. Molecular beam epitaxial growth of BGaAs ternary compounds. J Electron Mater, 2000, 29, 1387

[18]

Tian F, Song B, Chen X, et al. Unusual high thermal conductivity in boron arsenide bulk crystals. Science, 2018, 361, 582

[19]

Li S, Zheng Q, Lv Y, et al. High thermal conductivity in cubic boron arsenide crystals. Science, 2018, 361, 579

[20]

Kang J S, Li M, Wu H, et al. Experimental observation of high thermal conductivity in boron arsenide. Science, 2018, 361, 575

[21]

Detz H, MacFarland D, Zederbauer T, et al. Growth rate dependence of boron incorporation into BxGa1− xAs layers. J Cryst Growth, 2017, 477, 77

[22]

Dumont H, Rutzinger D, Vincent C, et al. Surface segregation of boron in BxGa1− xAs/GaAs epilayers studied by X-ray photoelectron spectroscopy and atomic force microscopy. Appl Phys Lett, 2003, 82, 1830

[23]

Azzi S, Zaoui A, Ferhat M. On the importance of the band gap bowing in boron-based III–V ternary alloys. Solid State Commun, 2007, 144, 245

[24]

Pryakhin D A. Growth of BGaAs layers on GaAs substrates by metal–organic vapor-phase epitaxy. Semiconductors, 2005, 39, 11

[25]

Dumont H, Dazord J, Monteil Y, et al. Growth and characterization of high quality BxGa1− xAs/GaAs(001) epilayers. J Cryst Growth, 2003, 248, 463

[26]

El-Jaroudi R H, McNicholas K M, Bouslog B A, et al. Boron alloys for GaAs-based 1.3 μm semiconductor lasers. Conference on Lasers and Electro-Optics, 2019

[27]

Geisz J F, Friedman D J, Olson J M, et al. BGaInAs alloys lattice matched to GaAs. Appl Phys Lett, 2000, 76, 1443

[28]

Geisz J F, Friedman D J, Kurtz S, et al. Alternative boron precursors for BGaAs epitaxy. J Electron Mater, 2001, 30, 1387

[29]

Beaton D A, Ptak A J, Alberi K, et al. Quaternary bismide alloy lattice matched to GaAs. J Cryst Growth, 2012, 351, 37

[30]

Ptak A J, Beaton D A, Mascarenhas A. Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant. J Cryst Growth, 2012, 351, 122

[31]

Dumont H, Monteil Y. Some aspects on thermodynamic properties, phase diagram and alloy formation in the ternary system BAs–GaAs—Part II: BGaAs alloy formation. J Cryst Growth, 2006, 290, 419

[32]

Saidi F, Hassen F, Maaref H, et al. Optical study of BxGa1− xAs/GaAs epilayers. Mater Sci Engi C, 2006, 26, 236

[33]

Saidi F, Hassen F, Dumont H, et al. Comparative optical study of GaAs1− xNx/GaAs and BxGa1− xAs/GaAs epilayers. IEE Proc - Optoelectron, 2004, 151, 342

[34]

Wang Q, Jia Z, Ren X, et al. Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1− xAs/GaAs multiple quantum wells. AIP Adv, 2013, 3, 072111

[35]

Hamila R, Saidi F, Fouzri A, et al. Clustering effects in optical properties of BGaAs/GaAs epilayers. J Lumin, 2009, 129, 1010

[36]

Hamila R, Saidi F, Rodriguez P H, et al. Growth temperature effects on boron incorporation and optical properties of BGaAs/GaAs grown by MOCVD. J Alloys Compnd, 2010, 506, 10

[37]

Saidi F, Hamila R, Maaref H, et al. Structural and optical study of BxInyGa1− x yAs/GaAs and InyGa1− yAs/GaAs QW’s grown by MOCVD. J Alloys Compnd, 2010, 491, 45

[38]

Rodriguez P, Auvray L, Dumont H, et al. Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE. J Cryst Growth, 2007, 298, 81

[39]

Hamila R, Saidi F, Maaref H, et al. Photoluminescence properties and high resolution X-ray diffraction investigation of BInGaAs/GaAs grown by the metalorganic vapour phase epitaxy method. J Appl Phys, 2012, 112, 063109

[40]

Hamila R, Saidi F, Rodriguez P, et al. Structural and optical study of BInGaAs/GaAs quantum wells grown by MOVPE emitting above 1.1 eV. Microelectron Eng, 2016, 149, 5

[41]

Hidouri T, Saidi F, Maaref H, et al. Localized state exciton model investigation of B-content effect on optical properties of BGaAs/GaAs epilayers grown by MOCVD. Vacuum, 2016, 132, 10

[42]

Hidouri T, Saidi F, Maaref H, et al. LSE investigation of the thermal effect on band gap energy and thermodynamic parameters of BInGaAs/GaAs single quantum well. Opt Mater, 2016, 62, 267

[43]

Hidouri T, Saidi F, Maaref H, et al. Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD. Opt Mater, 2016, 60, 487

[44]

Rodriguez P, Auvray L, Favier A, et al. Influence of boron surface enrichment on the growth mode of BGaAs epilayers grown on GaAs by metalorganic vapour phase epitaxy. Thin Solid Films, 2008, 516, 8424

[45]

Ilahi S, Baira M, Saidi F, et al. Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model. J Alloys Compnd, 2013, 581, 358

[46]

Ilahi S, Saidi F, Hamila R, et al. Photothermal deflection spectroscopy PDS investigation of optical and thermal properties of BGaAs/GaAs alloys. Curr Appl Phys, 2013, 13, 610

[47]

Ilahi S, Saidi F, Hamila R, et al. Shift of the gap energy and thermal conductivity in BGaAs/GaAs alloys. Physica B, 2013, 421, 105

[48]

Wang Q, Ren X, Wang F, et al. LP-MOCVD growth of ternary BxGa1− xAs epilayers on (001)GaAs substrates using TEB, TMGa and AsH3. Microelectron J, 2008, 39, 1678

[49]

Wang Q, Ren X, Huang H, et al. Growth of BxGa1− xAs, BxAl1− xAs and BxGa1− x yInyAs epilayers on (001) GaAs by low pressure metalorganic chemical vapor deposition. Microelectron J, 2009, 40, 87

[50]

Lancaster S, Groiss H, Zederbauer T, et al. Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy. Nanotechnology, 2019, 30, 065602

[51]

Brierley S K, Hendriks H T, Hoke W E, et al. Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy. Appl Phys Lett, 1993, 63, 812

[52]

Kley A, Ruggerone P, Scheffler M. Novel diffusion mechanism on the GaAs (001) surface: the role of adatom-dimer interaction. Phys Rev Letters, 1997, 79, 5278

[53]

Paulus B, Fulde P, Stoll H. Cohesive energies of cubic III-V semiconductors. Phys Rev B, 1996, 54, 2556

[54]

Groenert M E, Averbeck R, Hösler W, et al. Optimized growth of BGaAs by molecular beam epitaxy. J Cryst Growth, 2004, 264, 123

[55]

Lancaster S, Andrews A M, Stoeger-Pollach M, et al. Influence of boron antisite defects on the electrical properties of MBE-grown GaAs nanowires. Phys Status Solidi B, 2019, 256, 1800368

[56]

Bank S R, McNicholas K M, El-Jaroudi R H, et al. Improved MWIR LED arrays on Si substrates for scene projectors. IEEE Research and Applications of Photonics In Defense Conference (RAPID), 2018

[57]

Lindsay A, O’Reilly E P. Theory of electronic structure of BGaAs and related alloys. Phys Status Solidi C, 2008, 5, 454

[58]

Sommer N, Buss R, Ohlmann J, et al. Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPE. J Cryst Growth, 2013, 370, 191

[59]

Zhang S B, Zunger A. Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III–V semiconductors. Appl Phys Lett, 1997, 71, 677

[60]

Jenichen A, Engler C. Stability and band gaps of InGaAs, BGaAs, and BInGaAs alloys: Density-functional supercell calculations. Phys Status Solidi B, 2007, 244, 1957

[61]

Jenichen A, Engler C. Boron and indium substitution in GaAs (001) surfaces: Density-functional supercell calculations of the surface stability. Surf Sci, 2007, 601, 900

[62]

Jenichen A, Engler C. Metalorganic chemical-vapour-deposition (MOCVD) of InGaAs, BGaAs, and BInGaAs: Quantum chemical calculations on the mechanisms. J Cryst Growth, 2007, 304, 26

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C Zhao, B Xu, Z J Wang, Z G Wang, Boron-doped III–V semiconductors for Si-based optoelectronic devices[J]. J. Semicond., 2020, 41(1): 011301. doi: 10.1088/1674-4926/41/1/011301.

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Manuscript received: 07 November 2019 Manuscript revised: Online: Accepted Manuscript: 06 December 2019 Uncorrected proof: 19 December 2019 Published: 02 January 2020

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