Chin. J. Semicond. > Volume 12 > Issue 2 > Article Number: 68

Al/a-Si:H界面反应和热处理行为光发射研究

钟战天 , 王大文 , 廖显伯 , 牟善明 , 范越 and 李承芳

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Abstract: 利用XPS和AES对Al/a-Si∶H界面进行了研究.实验结果表明,最初阶段Al淀积在a-Si∶H上出现金属团.Al淀积量超过一定值后,起化学反应的Al和Si形成了互溶区,同时没有化学反应的Al在表面上形成金属Al层.此外,真空热处理加剧了Al/aSi∶H的界面反应和元素互扩散.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1991

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