Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 8

硅表面原子芯态能级的化学位移

邢益荣 and 钟学富

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Abstract: 本文以共价晶体硅的(100)面为例,直接采用原子波函数,在键轨道模型近似下计算了清洁和存在氧吸附的表面Si原子的2p能级结合能的位移,得到了与实验数据相吻合的结果,从而证明了利用这种方法研究芯能级结合能的位移是行之有效的.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

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