Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 12

In_(0.25)Ga_(0.75)As/GaAs应变异质结的离子沟道分析

殷士端 , 吴春武 , 张敬平 , 刘家瑞 and 朱沛然

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Abstract: 本文采用Li离子作为背散射-沟道实验的分析束来研究In_(0.75)Ga_(?)As/GaAs应变异质结的结构.沟道效应和角扫描的实验表明,由于晶格失配,异质结的点阵发生应变,晶格常数在生长方向产生~0.04A的拉伸或压缩,于是离子沟道在<110>倾斜方向发生0.9°的扭折,导致沿这个方向的严重退道.对较厚外延层的样品,除应变结构外,在生长过程中还形成失配位错结构及其他点阵缺陷,从而产生附加的退道。

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

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