Chin. J. Semicond. > Volume 10 > Issue 1 > Article Number: 18

SI~-、n-GaAs正电子湮没特性的研究

吴凤美 , 沈德勋 , 滕敏康 , 陈岭 , 唐杰 and 张德宏

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Abstract: 用正电子湮没技术,研究了半绝缘(SI)和掺Te的n型GaAs的退火行为及外延工艺的影响.结果表明,GaAs的平均寿命τ_M,长寿命τ_2,和基块寿命τ_b依赖于掺杂,同时τ_2的变化与镓空位和多镓空位均有关.外延后,由于退火的效果,I_2的降低和τ_2的增加是明显的.文中还讨论了电子和中子辐照的影响.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 January 1989

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