范卫军,夏建白
Abstract: 本文在有效质量理论基础上计算了GaAs/Al0.4Ga0.6As多量子阱子带间光吸收谱以及电子态密度。具体讨论了两种情况的吸收.第一种情况是量子阱中只存在一个基态;第二种情况是量子阱中存在一个基态同时还存在一个激发态.最后与有关实验进行比较.
Article views: 1722 Times PDF downloads: 1120 Times Cited by: 0 Times
Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 October 1994
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2