Chin. J. Semicond. > 1989, Volume 10 > Issue 2 > 100-107
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GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性

周海平 , 郑厚植 , 杨富华 , 曾一平 and 苏爱民

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(2): 100-107
      周海平, 郑厚植, 杨富华, 曾一平, 苏爱民. GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性[J]. 半导体学报(英文版), 1989, 10(2): 100-107.
      Citation:
      周海平, 郑厚植, 杨富华, 曾一平, 苏爱民. GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性[J]. 半导体学报(英文版), 1989, 10(2): 100-107.
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      • Received Date: 2015-08-19

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