Chin. J. Semicond. > Volume 10 > Issue 2 > Article Number: 100

GaAs/P型Al_xGa_(1-x)As异质结界面二维空穴的量子输运特性

周海平 , 郑厚植 , 杨富华 , 曾一平 and 苏爱民

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Abstract: 本文研究了利用分子束外延技术(MBE)生长的GaAs/P型Al_xGa_(1-x)As异质结构中的二维空穴的整数量子Hall效应(IQHE)、以及空穴复杂子带结构对IQHE的影响;讨论了在弱磁场区产生反常正磁阻效应的量子机理,指出两种载流子经典磁阻理论不能解释这一效应.

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History

Manuscript received: 19 August 2015 Manuscript revised: Online: Published: 01 February 1989

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