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Controlling spins in silicon quantum dots

Haiou Li, Xin Zhang and Guoping Guo

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 Corresponding author: Guoping Guo, gpguo@ustc.edu.cn

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[1]
Zhang X, Li H O, Cao G, et al. Semiconductor quantum computation. Natl Sci Rev, 2019, 6, 32 doi: 10.1093/nsr/nwy153
[2]
Hanson R, Kouwenhoven L P, Petta J R, et al. Spins in few-electron quantum dots. Rev Mod Phys, 2007, 79, 1217 doi: 10.1103/RevModPhys.79.1217
[3]
Zwanenburg F A, Dzurak A S, Morello A, et al. Silicon quantum electronics. Rev Mod Phys, 2013, 85, 961 doi: 10.1103/RevModPhys.85.961
[4]
Yoneda J, Takeda K, Otsuka T, et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat Nanotechnol, 2018, 13, 102 doi: 10.1038/s41565-017-0014-x
[5]
Yang C H, Chan K W, Harper R, et al. Silicon qubit fidelities approaching incoherent noise limits via pulse engineering. Nat Electron, 2019, 2, 151 doi: 10.1038/s41928-019-0234-1
[6]
Huang W, Yang C H, Chan K W, et al. Fidelity benchmarks for two-qubit gates in silicon. Nature, 2019, 569, 532 doi: 10.1038/s41586-019-1197-0
[7]
Yang C H, Leon R C C, Hwang J C C, et al. Operation of a silicon quantum processor unit cell above one kelvin. Nature, 2020, 580, 350 doi: 10.1038/s41586-020-2171-6
[8]
Petit L, Eenink H G J, Russ M, et al. Universal quantum logic in hot silicon qubits. Nature, 2020, 580, 355 doi: 10.1038/s41586-020-2170-7
[9]
Pillarisetty R, George H C, Watson T F, et al. High volume electrical characterization of semiconductor qubits. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 31.5.1
[10]
de Franceschi S, Hutin L, Maurand R, et al. SOI technology for quantum information processing. 2016 IEEE International Electron Devices Meeting (IEDM), 2016, 13.4.1
[11]
Yang C H, Rossi A, Ruskov R, et al. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Nat Commun, 2013, 4, 2069 doi: 10.1038/ncomms3069
[12]
Kawakami E, Scarlino P, Ward D R, et al. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nat Nanotechnol, 2014, 9, 666 doi: 10.1038/nnano.2014.153
[13]
Zhang X, Hu R Z, Li H O, et al. Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot. Phys Rev Lett, 2020, 124, 257701 doi: 10.1103/PhysRevLett.124.257701
[14]
Acín A, Bloch I, Buhrman H, et al. The quantum technologies roadmap: A European community view. New J Phys, 2018, 20, 080201 doi: 10.1088/1367-2630/aad1ea
Fig. 1.  (Color online) (a) False-color scanning electron microscopy (SEM) image of an overlapping-gate Si QD. (b) Energy level arrangement for Elezerman readout and Pauli spin blockade readout. (c) Dual nested gate integration of Si QDs using fin field-effect transistor (FinFET) technology. (d) SEM image of a two dimensional array of Si QDs using fully-depleted silicon-on-insulator transistor (FD-SOI) technology.

Fig. 2.  (Color online) Angle dependence of the relaxation rate measured with different magnetic field strengths.

[1]
Zhang X, Li H O, Cao G, et al. Semiconductor quantum computation. Natl Sci Rev, 2019, 6, 32 doi: 10.1093/nsr/nwy153
[2]
Hanson R, Kouwenhoven L P, Petta J R, et al. Spins in few-electron quantum dots. Rev Mod Phys, 2007, 79, 1217 doi: 10.1103/RevModPhys.79.1217
[3]
Zwanenburg F A, Dzurak A S, Morello A, et al. Silicon quantum electronics. Rev Mod Phys, 2013, 85, 961 doi: 10.1103/RevModPhys.85.961
[4]
Yoneda J, Takeda K, Otsuka T, et al. A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9%. Nat Nanotechnol, 2018, 13, 102 doi: 10.1038/s41565-017-0014-x
[5]
Yang C H, Chan K W, Harper R, et al. Silicon qubit fidelities approaching incoherent noise limits via pulse engineering. Nat Electron, 2019, 2, 151 doi: 10.1038/s41928-019-0234-1
[6]
Huang W, Yang C H, Chan K W, et al. Fidelity benchmarks for two-qubit gates in silicon. Nature, 2019, 569, 532 doi: 10.1038/s41586-019-1197-0
[7]
Yang C H, Leon R C C, Hwang J C C, et al. Operation of a silicon quantum processor unit cell above one kelvin. Nature, 2020, 580, 350 doi: 10.1038/s41586-020-2171-6
[8]
Petit L, Eenink H G J, Russ M, et al. Universal quantum logic in hot silicon qubits. Nature, 2020, 580, 355 doi: 10.1038/s41586-020-2170-7
[9]
Pillarisetty R, George H C, Watson T F, et al. High volume electrical characterization of semiconductor qubits. 2019 IEEE International Electron Devices Meeting (IEDM), 2019, 31.5.1
[10]
de Franceschi S, Hutin L, Maurand R, et al. SOI technology for quantum information processing. 2016 IEEE International Electron Devices Meeting (IEDM), 2016, 13.4.1
[11]
Yang C H, Rossi A, Ruskov R, et al. Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting. Nat Commun, 2013, 4, 2069 doi: 10.1038/ncomms3069
[12]
Kawakami E, Scarlino P, Ward D R, et al. Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. Nat Nanotechnol, 2014, 9, 666 doi: 10.1038/nnano.2014.153
[13]
Zhang X, Hu R Z, Li H O, et al. Giant anisotropy of spin relaxation and spin-valley mixing in a silicon quantum dot. Phys Rev Lett, 2020, 124, 257701 doi: 10.1103/PhysRevLett.124.257701
[14]
Acín A, Bloch I, Buhrman H, et al. The quantum technologies roadmap: A European community view. New J Phys, 2018, 20, 080201 doi: 10.1088/1367-2630/aad1ea
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    Received: Revised: Online: Accepted Manuscript: 18 June 2020Uncorrected proof: 18 June 2020Published: 02 July 2020

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      Haiou Li, Xin Zhang, Guoping Guo. Controlling spins in silicon quantum dots[J]. Journal of Semiconductors, 2020, 41(7): 070402. doi: 10.1088/1674-4926/41/7/070402 H O Li, X Zhang, G P Guo, Controlling spins in silicon quantum dots[J]. J. Semicond., 2020, 41(7): 070402. doi: 10.1088/1674-4926/41/7/070402.Export: BibTex EndNote
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      Haiou Li, Xin Zhang, Guoping Guo. Controlling spins in silicon quantum dots[J]. Journal of Semiconductors, 2020, 41(7): 070402. doi: 10.1088/1674-4926/41/7/070402

      H O Li, X Zhang, G P Guo, Controlling spins in silicon quantum dots[J]. J. Semicond., 2020, 41(7): 070402. doi: 10.1088/1674-4926/41/7/070402.
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      Controlling spins in silicon quantum dots

      doi: 10.1088/1674-4926/41/7/070402
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