Special Issues

Special issues are a collection of timely, high-quality invited articles on a particular topic which are published together in a single issue of the journal. We began to organize special issues from April 2016 and now we are delighted to present several special issues for 2017 and 2018, with more planned.

Our latest special issue

  • Reconfigurable Computing for Energy Efficient AI Microchip Technologies

    Guest Edited by Haigang Yang (Institute of Electronics, CAS, Beijing, China), Yajun Ha ( ShanghaiTech University, Shanghai, China), Lingli Wang (Fudan University, Shanghai, China), Wei Zhang (Hong Kong University of Science and Technology, Kowloon, Hong Kong, China), and Yingyan Lin (Rice University, Houston, TX, USA)

  • Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

    Guest Edited by Zhijie Wang (Institute of Semiconductors, CAS, Beijing, 100083, China), Chao Zhao (JARA-Fundamentals of Future Information Technology (JARA-FIT) and RWTH Aachen University, 52074, Aachen, Germany; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425, Jülich, Germany), and Fei Ding (Institute for Solid State Physics, Leibniz University of Hannover, Appelstraße 2, 30167, Hannover, Germany)

  • Ultra-Violet Optoelectronic Materials, Devices and Applications

    Guest Edited by Jinmin Li (Institute of Semiconductors, CAS, Beijing, China), Xinqiang Wang (Peking University, Beijing, China), Dabing Li (Changchun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun, China) and Tongbo Wei (Institute of Semiconductors, CAS, Beijing, China)

  • Flexible and Wearable Sensors for Robotics and Health

    Guest Edited by Zhiyong Fan (Hong Kong University of Science and Technology, Hong Kong SAR, China), Johnny C. Ho (City University of Hong Kong, Hong Kong SAR, China), Chuan Wang (Washington University in St. Louis, MO 63130, USA), Yun-Ze Long (Qingdao University, Qingdao 266071, China), and Huan Liu (Huazhong University of Science and Technology, Wuhan, 430074, China)

  • Compound Semiconductor Materials and Devices on Si

    Guest Edited by Huiyun Liu (University College London, Torrington Place, London, UK), Yikai Su (Shanghai Jiao Tong University, Shanghai, China), Chuanbo Li (Minzu University of China, Beijing, China), and Xuhan Guo (Shanghai Jiao Tong University, Shanghai, China)

  • A Celebration of the 100th Birthday of Prof. Kun Huang

    September 2nd, 2019 is the 100th birthday of Prof. Kun Huang, a world-famous physicist and one of the founders of solid state physics and semiconductor physics in China. Journal of Semiconductors publishes this special issue in commemoration of Prof. Kun Huang's Centenary Birthday. This special issue contains four review papers and four research papers covering semiconductor materials, physics and devices.

  • Challenges and Possibilities of Magnetic Semiconductors

    Guest Edited by Xinyu Liu (University of Notre Dame, Notre Dame, 46556, USA), Dahai Wei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China), and Jianhua Zhao (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)

  • Quantum Light Sources from Semiconductors

    Guest Edited by Xiulai Xu (Institute of Physics, Chinese Academy of Sciences, Beijing, China) and Jin-Shi Xu (University of Science and Technology of China, Hefei, China)

  • 2D-materials-related physical properties and optoelectronic devices

    Guest Edited by Ping-Heng Tan (Institute of Semiconductors, CAS, Beijing, China), Lijun Zhang (Jilin University, Changchun, China), Lun Dai (Peking University, Beijing, China) and Shuyun Zhou (Tsinghua University, Beijing, China)

  • Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

    Guest Edited by Xutang Tao (Shandong University, Ji’nan, China), Jiandong Ye (Nanjing University, Nanjing, China), Shibing Long (University of Science and Technology of China, Hefei, China) and Zhitai Jia (Shandong University, Ji’nan, China)

  • Semiconductor Materials Genome Initiative: New Concepts and Discoveries

    Guest Edited by Suhuai Wei (Beijing Computational Science Research Center, Beijing, China), Junwei Luo (Institute of Semiconductors, CAS, Beijing, China) and Bing Huang (Beijing Computational Science Research Center, Beijing, China)

  • Si-Based Materials and Devices

    Guest Edited by Chuanbo Li (Institute of Semiconductors, CAS, Beijing, China), Linwei Yu (Nanjing University, Nanjing, China),and Jinsong Xia (Huazhong University of Science and Technology, Wuhan, China)

  • Flexible and Wearable Electronics: from Materials to Applications

    Guest Edited by Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China), Yongfeng Mei (Fudan University, Shanghai, China), Chuan Wang (Michigan State University, East Lansing, MI, USA ), and Taeyoon Lee (Yonsei University, Seoul, South Korea)

  • 2D Materials and Devices

    2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.

  • Perovskite Solar Cells

    Organic/inorganic perovskite materials display unique optoelectronic properties. Recently, the power conversion efficiency of perovskite solar cells (PSCs) reaches record high of 22.1%, and expected to reach more than 25% in the near future by further enlarging the perovskite crystal size and passivating the surface/grain boundary defects, via reducing non-radiative carrier recombination at the interface and/or in the bulk. In this special issue, 5 mini-reviews and 6 research papers are collected to cover the main research topics in PSCs.

  • Devices and Circuits for Wearable and IoT Systems

    Guest Edited by Zhihua Wang (Tsinghua University, Beijing, China), Yong Hei (Institute of Microelectronics, CAS, Beijing, China), and Zhangming Zhu (Xidian University, Xi'an, China)

Upcoming and on-going special issues


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