Our latest special issue
Si-Based Materials and Devices
Guest Edited by Chuanbo Li (Institute of Semiconductors, CAS, Beijing, China), Linwei Yu (Nanjing University, Nanjing, China)，and Jinsong Xia (Huazhong University of Science and Technology, Wuhan, China)
Flexible and Wearable Electronics: from Materials to Applications
Guest Edited by Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China), Yongfeng Mei (Fudan University, Shanghai, China), Chuan Wang (Michigan State University, East Lansing, MI, USA ), and Taeyoon Lee (Yonsei University, Seoul, South Korea)
2D Materials and Devices
2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.
Perovskite Solar Cells
Organic/inorganic perovskite materials display unique optoelectronic properties. Recently, the power conversion efficiency of perovskite solar cells (PSCs) reaches record high of 22.1%, and expected to reach more than 25% in the near future by further enlarging the perovskite crystal size and passivating the surface/grain boundary defects, via reducing non-radiative carrier recombination at the interface and/or in the bulk. In this special issue, 5 mini-reviews and 6 research papers are collected to cover the main research topics in PSCs.
Devices and Circuits for Wearable and IoT Systems
Guest Edited by Zhihua Wang (Tsinghua University, Beijing, China), Yong Hei (Institute of Microelectronics, CAS, Beijing, China), and Zhangming Zhu (Xidian University, Xi'an, China)
Upcoming and on-going special issues
Semiconductor Materials Genome Initiative
Guest Edited by Suhuai Wei (Beijing Computational Science Research Center, Beijing, China), Junwei Luo (Institute of Semiconductors, CAS, Beijing, China) and Bing Huang (Beijing Computational Science Research Center, Beijing, China)