2019年JOS入选“中国科技期刊卓越行动计划”
2020年11月JOS被EI数据库收录
Special Issues

Special issues are a collection of timely, high-quality invited articles on a particular topic which are published together in a single issue of the journal. We began to organize special issues from April 2016 and now we are delighted to present several special issues for 2017 and 2018, with more planned.

Our latest special issue

  • Flexible Energy Devices

    Guest Edited by Zhiyong Fan (Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China), Yonghua Chen (Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816, China), Yuanjing Lin (School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China; Engineering Research Center of Integrated Circuits for Next-Generation Communications, Ministry of Education, Southern University of Science and Technology, Shenzhen 518055, China), Yunlong Zi (Department of Mechanical and Automation Engineering, The Chinese University of Hong Kong, Hong Kong 999077, China), Hyunhyub Ko (Energy and Chemical Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea), and Qianpeng Zhang (Department of Electronic & Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong 999077, China)

  • Semiconductor Optoelectronic Integrated Circuits

    Guest Edited by Wei Wang (Institute of Semiconductors, CAS, Beijing, China), Lingjuan Zhao (Institute of Semiconductors, CAS, Beijing, China), Dan Lu (Institute of Semiconductors, CAS, Beijing, China), Jianping Yao (University of Ottawa, Ottawa, Ontario, Canada), Weiping Huang (Shandong University, Jinan, China), Yong Liu (University of Electronic Science and Technology, Chengdu, China), and Brent Little (QXP Technologies Inc., Xi’an, China)

  • Three-Dimensional (3D) Heterogeneous Integration

    Guest Edited by Yue Hao (Xidian University, Xi’an, China), Huaqiang Wu (Tsinghua University, Beijing, China), Yuchao Yang (Peking University, Beijing, China), Qi Liu (Fudan University, Shanghai, China), Xiao Gong (National University of Singapore, Singapore, Singapore), Genquan Han (Xidian University, Xi’an, China), and Ming Li (Institute of Semiconductors, CAS, Beijing, China)

  • Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

    Guest Edited by Yue Hao (Xidian University, Xi’an, China), Huaqiang Wu (Tsinghua University, Beijing, China), Yuchao Yang (Peking University, Beijing, China), Qi Liu (Fudan University, Shanghai, China), Xiao Gong (National University of Singapore, Singapore, Singapore), Genquan Han (Xidian University, Xi’an, China), and Ming Li (Institute of Semiconductors, CAS, Beijing, China)

  • Advanced Analog and Mixed-Mode Integrated Circuits

    Guest Edited by Baoyong Chi (Tsinghua University, Beijing, China), Nan Sun (Tsinghua University, Beijing, China), Liyuan Liu (Institute of Semiconductors, CAS, Beijing, China), and Yan Lu (University of Macau, Macau, China)

  • Challenges and Possibilities of Energy Storage

    Guest Edited by Chao Zhao (Institute of Semiconductors, CAS, Beijing, China), Zhijie Wang (Institute of Semiconductors, CAS, Beijing, China), Dajun Shu (Nanjing University, Nanjing, China), and Yong Lei (Technische Universität Ilmenau, Ilmenau, Germany)

  • Monoelemental 2D Semiconducting Materials and Their Applications

    Guest Edited by Han Zhang (Shenzhen University, Shenzhen, China), Xiantao Jiang (Shenzhen University, Shenzhen, China), Yeliang Wang (Beijing Institute of Technology, Beijing, China), Krassimir Panajotov (Vrije Universiteit Brussels, Brussels, Belgium), and Shengli Zhang (Nanjing University, Nanjing, China)

  • Quantum Transport in Mesoscopic Systems

    Guest Edited by Yu Ye (Peking University, Beijing, China ) and Zheng Han (Institute of Metal Research, CAS, Shenyang, China)

  • Perovskite Semiconductor Optoelectronic Materials and Devices

    Guest Edited by Jingbi You (Institute of Semiconductors, CAS, Beijing, China), Jiang Tang (Huazhong University of Science and Technology, Wuhan , China), Haibo Zeng (Nanjing University of Science and Technology, Nanjing , China), and Jianpu Wang (Nanjing Tech University, Nanjing, China)

  • Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications

    Guest Edited by Yongfeng Mei (Fudan University, Shanghai, China), Wei Gao (California Institute of Technology, Pasadena, CA, USA), Hui Fang (Northeastern University, Boston, MA 02115, USA), Yuan Lin (University of Electronic Science and Technology of China, Chengdu, China), and Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China)

  • Reconfigurable Computing for Energy Efficient AI Microchip Technologies

    Guest Edited by Haigang Yang (Institute of Electronics, CAS, Beijing, China), Yajun Ha ( ShanghaiTech University, Shanghai, China), Lingli Wang (Fudan University, Shanghai, China), Wei Zhang (Hong Kong University of Science and Technology, Kowloon, Hong Kong, China), and Yingyan Lin (Rice University, Houston, TX, USA)

  • Celebration of the 60th Anniversary of Dedicating to Scientific Research of Prof. Zhanguo Wang

    Guest Edited by Zhijie Wang (Institute of Semiconductors, CAS, Beijing, 100083, China), Chao Zhao (JARA-Fundamentals of Future Information Technology (JARA-FIT) and RWTH Aachen University, 52074, Aachen, Germany; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425, Jülich, Germany), and Fei Ding (Institute for Solid State Physics, Leibniz University of Hannover, Appelstraße 2, 30167, Hannover, Germany)

  • Ultra-Violet Optoelectronic Materials, Devices and Applications

    Guest Edited by Jinmin Li (Institute of Semiconductors, CAS, Beijing, China), Xinqiang Wang (Peking University, Beijing, China), Dabing Li (Changchun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun, China) and Tongbo Wei (Institute of Semiconductors, CAS, Beijing, China)

  • Flexible and Wearable Sensors for Robotics and Health

    Guest Edited by Zhiyong Fan (Hong Kong University of Science and Technology, Hong Kong SAR, China), Johnny C. Ho (City University of Hong Kong, Hong Kong SAR, China), Chuan Wang (Washington University in St. Louis, MO 63130, USA), Yun-Ze Long (Qingdao University, Qingdao 266071, China), and Huan Liu (Huazhong University of Science and Technology, Wuhan, 430074, China)

  • Compound Semiconductor Materials and Devices on Si

    Guest Edited by Huiyun Liu (University College London, Torrington Place, London, UK), Yikai Su (Shanghai Jiao Tong University, Shanghai, China), Chuanbo Li (Minzu University of China, Beijing, China), and Xuhan Guo (Shanghai Jiao Tong University, Shanghai, China)

  • A Celebration of the 100th Birthday of Prof. Kun Huang

    September 2nd, 2019 is the 100th birthday of Prof. Kun Huang, a world-famous physicist and one of the founders of solid state physics and semiconductor physics in China. Journal of Semiconductors publishes this special issue in commemoration of Prof. Kun Huang's Centenary Birthday. This special issue contains four review papers and four research papers covering semiconductor materials, physics and devices.

  • Challenges and Possibilities of Magnetic Semiconductors

    Guest Edited by Xinyu Liu (University of Notre Dame, Notre Dame, 46556, USA), Dahai Wei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China), and Jianhua Zhao (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)

  • Quantum Light Sources from Semiconductors

    Guest Edited by Xiulai Xu (Institute of Physics, Chinese Academy of Sciences, Beijing, China) and Jin-Shi Xu (University of Science and Technology of China, Hefei, China)

  • 2D-materials-related physical properties and optoelectronic devices

    Guest Edited by Ping-Heng Tan (Institute of Semiconductors, CAS, Beijing, China), Lijun Zhang (Jilin University, Changchun, China), Lun Dai (Peking University, Beijing, China) and Shuyun Zhou (Tsinghua University, Beijing, China)

  • Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

    Guest Edited by Xutang Tao (Shandong University, Ji’nan, China), Jiandong Ye (Nanjing University, Nanjing, China), Shibing Long (University of Science and Technology of China, Hefei, China) and Zhitai Jia (Shandong University, Ji’nan, China)

  • Semiconductor Materials Genome Initiative: New Concepts and Discoveries

    Guest Edited by Suhuai Wei (Beijing Computational Science Research Center, Beijing, China), Junwei Luo (Institute of Semiconductors, CAS, Beijing, China) and Bing Huang (Beijing Computational Science Research Center, Beijing, China)

  • Si-Based Materials and Devices

    Guest Edited by Chuanbo Li (Institute of Semiconductors, CAS, Beijing, China), Linwei Yu (Nanjing University, Nanjing, China),and Jinsong Xia (Huazhong University of Science and Technology, Wuhan, China)

  • Flexible and Wearable Electronics: from Materials to Applications

    Guest Edited by Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China), Yongfeng Mei (Fudan University, Shanghai, China), Chuan Wang (Michigan State University, East Lansing, MI, USA ), and Taeyoon Lee (Yonsei University, Seoul, South Korea)

  • 2D Materials and Devices

    2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.

  • Perovskite Solar Cells

    Organic/inorganic perovskite materials display unique optoelectronic properties. Recently, the power conversion efficiency of perovskite solar cells (PSCs) reaches record high of 22.1%, and expected to reach more than 25% in the near future by further enlarging the perovskite crystal size and passivating the surface/grain boundary defects, via reducing non-radiative carrier recombination at the interface and/or in the bulk. In this special issue, 5 mini-reviews and 6 research papers are collected to cover the main research topics in PSCs.

  • Devices and Circuits for Wearable and IoT Systems

    Guest Edited by Zhihua Wang (Tsinghua University, Beijing, China), Yong Hei (Institute of Microelectronics, CAS, Beijing, China), and Zhangming Zhu (Xidian University, Xi'an, China)

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