Special Issues

Special issues are a collection of timely, high-quality invited articles on a particular topic which are published together in a single issue of the journal. We began to organize special issues from April 2016 and now we are delighted to present several special issues for 2017 and 2018, with more planned.

Our latest special issue

  • Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices

    Guest Edited by Xutang Tao (Shandong University, Ji’nan, China), Jiandong Ye (Nanjing University, Nanjing, China), Shibing Long (University of Science and Technology of China, Hefei, China) and Zhitai Jia (Shandong University, Ji’nan, China)

  • Semiconductor Materials Genome Initiative: New Concepts and Discoveries

    Guest Edited by Suhuai Wei (Beijing Computational Science Research Center, Beijing, China), Junwei Luo (Institute of Semiconductors, CAS, Beijing, China) and Bing Huang (Beijing Computational Science Research Center, Beijing, China)

  • Si-Based Materials and Devices

    Guest Edited by Chuanbo Li (Institute of Semiconductors, CAS, Beijing, China), Linwei Yu (Nanjing University, Nanjing, China),and Jinsong Xia (Huazhong University of Science and Technology, Wuhan, China)

  • Flexible and Wearable Electronics: from Materials to Applications

    Guest Edited by Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China), Yongfeng Mei (Fudan University, Shanghai, China), Chuan Wang (Michigan State University, East Lansing, MI, USA ), and Taeyoon Lee (Yonsei University, Seoul, South Korea)

  • 2D Materials and Devices

    2-dimensional (2D) materials have attracted increasing attention in recent years due to novel properties and potential for industrial application. With the rapid developments of both top-down and bottom-up synthesis methods, a lot of new 2D materials beyond graphene have been uncovered, such as BN sheet, silicene, graphdiyne, transition metal chalcogenides and black phosphorus etc. This issue brings along 5 reviews and 7 research papers and discusses the synthesis, properties, band structure modulation, and quantum transport in various 2D materials.

  • Perovskite Solar Cells

    Organic/inorganic perovskite materials display unique optoelectronic properties. Recently, the power conversion efficiency of perovskite solar cells (PSCs) reaches record high of 22.1%, and expected to reach more than 25% in the near future by further enlarging the perovskite crystal size and passivating the surface/grain boundary defects, via reducing non-radiative carrier recombination at the interface and/or in the bulk. In this special issue, 5 mini-reviews and 6 research papers are collected to cover the main research topics in PSCs.

  • Devices and Circuits for Wearable and IoT Systems

    Guest Edited by Zhihua Wang (Tsinghua University, Beijing, China), Yong Hei (Institute of Microelectronics, CAS, Beijing, China), and Zhangming Zhu (Xidian University, Xi'an, China)

Upcoming and on-going special issues

  • Reconfigurable Computing for Energy Efficient AI Microchip Technologies

    Guest Edited by Haigang Yang (Institute of Electronics, Chinese Academy of Sciences, Beijing, China), Yajun Ha (School of Information Science and Technology, ShanghaiTech University, Shanghai, China), Lingli Wang (State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China), Wei Zhang (Reconfigurable Computing Systems Lab, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong Kong, China), and Yingyan Lin (Efficient and Intelligent Computing (EIC) Lab, Department of Electrical and Computer Engineering, Rice University, Houston, TX, USA)

  • Quantum Transport in Mesoscopic Systems

    Guest Edited by Yu Ye (Peking University, Beijing, China ), Zheng Han(Institute of Metal Research, CAS, Shenyang, China)

  • Quantum Light Sources from Semiconductors

    Guest Edited by Xiulai Xu (Institute of Physics, Chinese Academy of Sciences, Beijing, China ), Jin-Shi Xu(University of Science and Technology of China, Hefei, China)

  • 2D materials related physical properties and optoelectronic devices

    Guest Edited by Ping-Heng Tan (Institute of Semiconductors, CAS, Beijing, China), Shuyun Zhou (Tsinghua University, Beijing, China), Lun Dai (Peking University, Beijing, China) and Lijun Zhang (Jilin University, Changchun, China)

  • Flexible and Wearable Sensors for Robotics and Health

    Guest Edited by Zhiyong Fan (Hong Kong University of Science and Technology, Hong Kong SAR, China), Johnny C. Ho (City University of Hong Kong, Hong Kong SAR, China), Chuan Wang (Washington University in St. Louis, MO 63130, USA), and Yunze Long (Qingdao University, Qingdao 266071, China)

  • Flexible Materials and Structures for Bioengineering, Sensing, and Energy Applications

    Guest Edited by Yongfeng Mei (Fudan University, Shanghai, China), Wei Gao (California Institute of Technology, Pasadena, CA, USA), Hui Fang (Northeastern University, Boston, MA 02115, USA), Yuan Lin (University of Electronic Science and Technology of China, Chengdu, China), and Guozhen Shen (Institute of Semiconductors, CAS, Beijing, China)

  • 2D Materials and Heterostructures

    Guest Edited by Professor Weida Hu (Shanghai Institute of Technical Physics, CAS, China)

  • Ultra-Violet Optoelectronic Materials, Devices and Applications

    Guest Edited by Jinmin Li (Institute of Semiconductors, CAS, Beijing, China), Xinqiang Wang (Peking University, Beijing, China), Dabing Li (Changchun Institute of Optics, Fine Mechanics and Physics, CAS, Changchun, China) and Tongbo Wei (Institute of Semiconductors, CAS, Beijing, China)

Search

Advanced Search >>