Citation: |
Xiao Li, Zhikang Ma, Jinxiong Li, Wengao Pan, Congwei Liao, Shengdong Zhang, Zhuo Gao, Dong Fu, Lei Lu. Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors[J]. Journal of Semiconductors, 2024, 45(10): 102301. doi: 10.1088/1674-4926/24040016
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X Li, Z K Ma, J X Li, W G Pan, C W Liao, S D Zhang, Z Gao, D Fu, and L Lu, Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors[J]. J. Semicond., 2024, 45(10), 102301 doi: 10.1088/1674-4926/24040016
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Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors
DOI: 10.1088/1674-4926/24040016
CSTR: 32376.14.1674-4926.24040016
More Information-
Abstract
This study investigates the carrier transport of heterojunction channel in oxide semiconductor thin-film transistor (TFT) using the elevated-metal metal-oxide (EMMO) architecture and indium−zinc oxide (InZnO). The heterojunction band diagram of InZnO bilayer was modified by the cation composition to form the two-dimensional electron gas (2DEG) at the interface quantum well, as verified using a metal−insulator−semiconductor (MIS) device. Although the 2DEG indeed contributes to a higher mobility than the monolayer channel, the competition and cooperation between the gate field and the built-in field strongly affect such mobility-boosting effect, originating from the carrier inelastic collision at the heterojunction interface and the gate field-induced suppression of quantum well. Benefited from the proper energy-band engineering, a high mobility of 84.3 cm2·V−1·s−1, a decent threshold voltage (Vth) of −6.5 V, and a steep subthreshold swing (SS) of 0.29 V/dec were obtained in InZnO-based heterojunction TFT. -
References
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