J. Semicond. > 2025, Volume 46 > Issue 3 > 032702

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Broadband full-stokes polarimeter based on ReS2 nanobelts

Tinghao Lin1, Wendian Yao2, Zeyi Liu2, Haizhen Wang3, Dehui Li1, 2, and and Xinliang Zhang1,

+ Author Affiliations

 Corresponding author: Dehui Li, dehuili@hust.edu.cn; and Xinliang Zhang, xlzhang@mail.hust.edu.cn

DOI: 10.1088/1674-4926/24080023CSTR: 32376.14.1674-4926.24080023

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Abstract: Full-Stokes polarimeters can detect the polarization states of light, which is critical for the next-generation optical and optoelectronic systems. Traditional full-Stokes polarimeters are either based on bulky optical systems or complex metasurface structures, which cause the system complexity with unessential energy loss. Recently, filterless on-chip full-Stokes polarimeters have been demonstrated by using optical anisotropic materials which are able to detect the circularly polarized light. Nevertheless, those on-chip full-Stokes polarimeters have either the limited detection wavelength range or relatively poor device performance that need to be further improved. Here, we report the high performance broadband full-Stokes polarimeters based on rhenium disulfide (ReS2). While the anisotropic structure of the ReS2 introduces the in-plane optical anisotropy for linearly polarized light (LP) detection, Schottky contacts formed by the ReS2−Au could break the symmetry, which can detect circularly polarized (CP) light. By building a proper model, all four Stokes parameters can be extracted by using the ReS2 nanobelt device. The device delivers a photoresponsivity of 181 A/W, a detectivity of 6.8 × 1010 Jones and can sense the four Stokes parameters of incident light within a wide range of wavelength from 565−800 nm with reasonable average errors. We believe our study provides an alternative strategy to develop high performance broadband on-chip full-Stokes polarimeters.

Key words: broadbandstates of polarizationReS2full-Stokes polarimeter



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Zhao T G, Guo J X, Li T T, et al. Substrate engineering for wafer-scale two-dimensional material growth: Strategies, mechanisms, and perspectives. Chem Soc Rev, 2023, 52, 1650 doi: 10.1039/D2CS00657J
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Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi2Se3 heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11, 2450 doi: 10.1021/acsphotonics.4c00347
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Wang Z, Tan C H, Peng M, et al. Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation. Light Sci Appl, 2024, 13, 277 doi: 10.1038/s41377-024-01640-w
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Xin Y, Wang X X, Chen Z, et al. Polarization-sensitive self-powered type-II GeSe/MoS2 van der waals heterojunction photodetector. ACS Appl Mater Interfaces, 2020, 12, 15406 doi: 10.1021/acsami.0c01405
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Li G, Yin S Q, Tan C Y, et al. Fast photothermoelectric response in CVD-grown PdSe2 photodetectors with In-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[32]
Liu F C, Zheng S J, He X X, et al. Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv Funct Mater, 2016, 26, 1169 doi: 10.1002/adfm.201504546
[33]
Nagler P, Plechinger G, Schüller C, et al. Observation of anisotropic interlayer Raman modes in few-layer ReS2. Phys Status Solidi RRL, 2016, 10, 185 doi: 10.1002/pssr.201510412
[34]
Sim S, Lee D, Noh M, et al. Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2. Nat Commun, 2016, 7, 13569 doi: 10.1038/ncomms13569
[35]
McCreary A, Simpson J R, Wang Y X, et al. Intricate resonant Raman response in anisotropic ReS2. Nano Lett, 2017, 17, 5897 doi: 10.1021/acs.nanolett.7b01463
[36]
Rahman M, Davey K, Qiao S Z. Advent of 2D rhenium disulfide (ReS2): Fundamentals to applications. Adv Funct Mater, 2017, 27, 1606129 doi: 10.1002/adfm.201606129
[37]
Lin T H, Yao W D, Liu Z Y, et al. High performance broadband full linear polarimeter based on ReS2 nanobelts. Adv Opt Mater, 2023, 11, 2300345 doi: 10.1002/adom.202300345
[38]
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[40]
Dhara S, Mele E J, Agarwal R. Voltage-tunable circular photogalvanic effect in silicon nanowires. Science, 2015, 349, 726 doi: 10.1126/science.aac6275
[41]
Quereda J, Hidding J, Ghiasi T S, et al. The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors. NPJ 2D Mater Appl, 2021, 5, 13 doi: 10.1038/s41699-020-00194-w
[42]
Xiong Y F, Wang Y S, Zhu R Z, et al. Twisted black phosphorus-based van der Waals stacks for fiber-integrated polarimeters. Sci Adv, 2022, 8, eabo0375 doi: 10.1126/sciadv.abo0375
[43]
Li J Z, Wang J, Ma J Q, et al. Self-trapped state enabled filterless narrowband photodetections in 2D layered perovskite single crystals. Nat Commun, 2019, 10, 806 doi: 10.1038/s41467-019-08768-z
Fig. 1.  (Color online) (a) The schematic illustration of ReS2 crystal structure. (b) OM image of the as-fabricated device with the scale bar of 50 μm. (c) AFM image of the ReS2 nanobelt. Inset: the height profile along the blue line. The scale bar is 1 μm. (d) SEM image of ReS2 nanobelt. The scale bar is 1 μm. (e) The schematics of the device configuration and measurement setup. (f) The current−voltage curves of the ReS2 nanobelt device under dark condition and under 7.8 μW/cm2 illumination with a wavelength of 665 nm. The polarization direction is 0 degree, which is along b-axis of nanobelt marked by the white arrow in (b). The inset shows the local enlarged curves.

Fig. 2.  (Color online) (a) Spectral response of our device at different biases. (b) Time-dependent photocurrent response at different biases illuminated by a 7.8 μW/cm2, 665 nm light. (c) Light power density dependent photocurrent and responsivity at 0.5 V bias. (d) Photoresponse versus modulation frequency of the device. (e) Noise power density spectrum of the device. (f) Estimated detectivity (D*) spectrum at 0.5 V bias.

Fig. 3.  (Color online) (a) The polar plot of the photocurrent under 0.5 V bias versus the polarization angle. The incident light power is 7.8 μW/cm2. (b) The photocurrent under 0.5 V bias versus the quarter-wave plate angle (black curves). The extracted CPGE (red curves) show the current components under CP light illumination. (c) and (d) Measured photocurrent under incident light with different polarization states when the rotation angles of the device are 0°, 45°, 90°, 135°, and 180°. The incident light is tuned at 665 nm with a power density of 7.8 μW/cm2. (e) The average measurement errors of our device.

Fig. 4.  (Color online) The average measurement errors of the Stokes parameters, S1, S2, and S3 based on our ReS2 nanobelt full-Stokes polarimeter under irradiation with different wavelength (a) and light power density (b).

[1]
Rubin N A, D’Aversa G, Chevalier P, et al. Matrix Fourier optics enables a compact full-Stokes polarization camera. Science, 2019, 365, eaax1839 doi: 10.1126/science.aax1839
[2]
He S, Wang X, Xia R Q, et al. Polarimetric infrared imaging simulation of a synthetic sea surface with Mie scattering. Appl Opt, 2018, 57, B150 doi: 10.1364/AO.57.00B150
[3]
Shao X Z, Zheng W, Huang Z W. Polarized near-infrared autofluorescence imaging combined with near-infrared diffuse reflectance imaging for improving colonic cancer detection. Opt Express, 2010, 18, 24293 doi: 10.1364/OE.18.024293
[4]
Niu Y Y, Zhou X, Gao W, et al. Interfacial engineering of In2Se3/h-BN/CsPb(Br/I)3 heterostructure photodetector and its application in automatic obstacle avoidance system. ACS Nano, 2023, 17, 13760 doi: 10.1021/acsnano.3c03319
[5]
Talmage D A, Curran P J. Remote sensing using partially polarized light. Int J Remote Sens, 1986, 7, 47 doi: 10.1080/01431168608954660
[6]
Long M S, Gao A Y, Wang P, et al. Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus. Sci Adv, 2017, 3, e1700589 doi: 10.1126/sciadv.1700589
[7]
Ahn J, Kyhm J H, Kang H K, et al. 2D MoTe2/ReS2 van der waals heterostructure for high-performance and linear polarization-sensitive photodetector. ACS Photonics, 2021, 8, 2650 doi: 10.1021/acsphotonics.1c00598
[8]
Balthasar Mueller J P, Leosson K, Capasso F. Ultracompact metasurface in-line polarimeter. Optica, 2016, 3, 42 doi: 10.1364/OPTICA.3.000042
[9]
Berry H G, Gabrielse G, Livingston A E. Measurement of the Stokes parameters of light. Appl Opt, 1977, 16, 3200 doi: 10.1364/AO.16.003200
[10]
Li X S, Wang H, Xu X M, et al. Mid-infrared full-Stokes polarization detection based on dielectric metasurfaces. Opt Commun, 2021, 484, 126690 doi: 10.1016/j.optcom.2020.126690
[11]
Lin Z J, Dadalyan T, Bélanger-de Villers S, et al. Chip-scale full-stokes spectropolarimeter in silicon photonic circuits. Photon Res, 2020, 8, 864 doi: 10.1364/PRJ.385008
[12]
Lin Z J, Rusch L, Chen Y X, et al. Chip-scale, full-Stokes polarimeter. Opt Express, 2019, 27, 4867 doi: 10.1364/OE.27.004867
[13]
Basiri A, Chen X H, Bai J, et al. Nature-inspired chiral metasurfaces for circular polarization detection and full-Stokes polarimetric measurements. Light: Sci Appl, 2019, 8, 78 doi: 10.1038/s41377-019-0184-4
[14]
Dai M J, Wang C W, Qiang B, et al. On-chip mid-infrared photothermoelectric detectors for full-Stokes detection. Nat Commun, 2022, 13, 4560 doi: 10.1038/s41467-022-32309-w
[15]
Zhao Y J, Qiu Y C, Feng J G, et al. Chiral 2D-perovskite nanowires for stokes photodetectors. J Am Chem Soc, 2021, 143, 8437 doi: 10.1021/jacs.1c02675
[16]
Fang C, Li J Z, Zhou B X, et al. Self-powered filterless on-chip full-stokes polarimeter. Nano Lett, 2021, 21, 6156 doi: 10.1021/acs.nanolett.1c01729
[17]
Ma J Q, Fang C, Liang L H, et al. Full-stokes polarimeter based on chiral perovskites with chirality and large optical anisotropy. Small, 2021, 17, 2103855 doi: 10.1002/smll.202103855
[18]
Fang C, Wang H Z, Shen H Z, et al. High-performance photodetectors based on lead-free 2D ruddlesden-popper perovskite/MoS2 heterostructures. ACS Appl Mater Inter, 2019, 11, 8419 doi: 10.1021/acsami.8b20538
[19]
Zhong F, Ye J F, He T, et al. Substitutionally doped MoSe2 for high-performance electronics and optoelectronics. Small, 2021, 17, e2102855 doi: 10.1002/smll.202102855
[20]
Lan H Y, Hsieh Y H, Chiao Z Y, et al. Gate-tunable plasmon-enhanced photodetection in a monolayer MoS2 phototransistor with ultrahigh photoresponsivity. Nano Lett, 2021, 21, 3083 doi: 10.1021/acs.nanolett.1c00271
[21]
Zhou Y, Luo J J, Zhao Y, et al. Flexible linearly polarized photodetectors based on all-inorganic perovskite CsPbI3 nanowires. Adv Opt Mater, 2018, 6, 1800679 doi: 10.1002/adom.201800679
[22]
Yao J D, Yang G W. Flexible and high-performance all-2D photodetector for wearable devices. Small, 2018, 14, e1704524 doi: 10.1002/smll.201704524
[23]
Zhao T G, Guo J X, Li T T, et al. Substrate engineering for wafer-scale two-dimensional material growth: Strategies, mechanisms, and perspectives. Chem Soc Rev, 2023, 52, 1650 doi: 10.1039/D2CS00657J
[24]
Zhao T G, Chen Y, Xu T F, et al. Topological insulator Bi2Se3 heterojunction with a low dark current for midwave infrared photodetection. ACS Photonics, 2024, 11, 2450 doi: 10.1021/acsphotonics.4c00347
[25]
Wang Z, Tan C H, Peng M, et al. Giant infrared bulk photovoltaic effect in tellurene for broad-spectrum neuromodulation. Light Sci Appl, 2024, 13, 277 doi: 10.1038/s41377-024-01640-w
[26]
Ahn J, Ko K, Kyhm J H, et al. Near-infrared self-powered linearly polarized photodetection and digital incoherent holography using WSe2/ReSe2 van der waals heterostructure. ACS Nano, 2021, 15, 17917 doi: 10.1021/acsnano.1c06234
[27]
Zhang E Z, Wang P, Li Z, et al. Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano, 2016, 10, 8067 doi: 10.1021/acsnano.6b04165
[28]
Yang Y S, Liu S C, Yang W, et al. Air-stable In-plane anisotropic GeSe2 for highly polarization-sensitive photodetection in short wave region. J Am Chem Soc, 2018, 140, 4150 doi: 10.1021/jacs.8b01234
[29]
Xin Y, Wang X X, Chen Z, et al. Polarization-sensitive self-powered type-II GeSe/MoS2 van der waals heterojunction photodetector. ACS Appl Mater Interfaces, 2020, 12, 15406 doi: 10.1021/acsami.0c01405
[30]
Wu D, Xu M M, Zeng L H, et al. In situ fabrication of PdSe2/GaN Schottky junction for polarization-sensitive ultraviolet photodetection with high dichroic ratio. ACS Nano, 2022, 16, 5545 doi: 10.1021/acsnano.1c10181
[31]
Li G, Yin S Q, Tan C Y, et al. Fast photothermoelectric response in CVD-grown PdSe2 photodetectors with In-plane anisotropy. Adv Funct Mater, 2021, 31, 2104787 doi: 10.1002/adfm.202104787
[32]
Liu F C, Zheng S J, He X X, et al. Highly sensitive detection of polarized light using anisotropic 2D ReS2. Adv Funct Mater, 2016, 26, 1169 doi: 10.1002/adfm.201504546
[33]
Nagler P, Plechinger G, Schüller C, et al. Observation of anisotropic interlayer Raman modes in few-layer ReS2. Phys Status Solidi RRL, 2016, 10, 185 doi: 10.1002/pssr.201510412
[34]
Sim S, Lee D, Noh M, et al. Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS2. Nat Commun, 2016, 7, 13569 doi: 10.1038/ncomms13569
[35]
McCreary A, Simpson J R, Wang Y X, et al. Intricate resonant Raman response in anisotropic ReS2. Nano Lett, 2017, 17, 5897 doi: 10.1021/acs.nanolett.7b01463
[36]
Rahman M, Davey K, Qiao S Z. Advent of 2D rhenium disulfide (ReS2): Fundamentals to applications. Adv Funct Mater, 2017, 27, 1606129 doi: 10.1002/adfm.201606129
[37]
Lin T H, Yao W D, Liu Z Y, et al. High performance broadband full linear polarimeter based on ReS2 nanobelts. Adv Opt Mater, 2023, 11, 2300345 doi: 10.1002/adom.202300345
[38]
Gao S, Wang Z Q, Wang H D, et al. Graphene/MoS2/graphene vertical heterostructure-based broadband photodetector with high performance. Adv Mater Interfaces, 2021, 8, 2001730 doi: 10.1002/admi.202001730
[39]
Zhang K, Fang X, Wang Y L, et al. Ultrasensitive near-infrared photodetectors based on a graphene–MoTe2–graphene vertical van der waals heterostructure. ACS Appl Mater Interfaces, 2017, 9, 5392 doi: 10.1021/acsami.6b14483
[40]
Dhara S, Mele E J, Agarwal R. Voltage-tunable circular photogalvanic effect in silicon nanowires. Science, 2015, 349, 726 doi: 10.1126/science.aac6275
[41]
Quereda J, Hidding J, Ghiasi T S, et al. The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors. NPJ 2D Mater Appl, 2021, 5, 13 doi: 10.1038/s41699-020-00194-w
[42]
Xiong Y F, Wang Y S, Zhu R Z, et al. Twisted black phosphorus-based van der Waals stacks for fiber-integrated polarimeters. Sci Adv, 2022, 8, eabo0375 doi: 10.1126/sciadv.abo0375
[43]
Li J Z, Wang J, Ma J Q, et al. Self-trapped state enabled filterless narrowband photodetections in 2D layered perovskite single crystals. Nat Commun, 2019, 10, 806 doi: 10.1038/s41467-019-08768-z

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    Received: 23 July 2024 Revised: 08 November 2024 Online: Accepted Manuscript: 29 November 2024Uncorrected proof: 07 February 2025Published: 14 March 2025

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      Tinghao Lin, Wendian Yao, Zeyi Liu, Haizhen Wang, Dehui Li, and Xinliang Zhang. Broadband full-stokes polarimeter based on ReS2 nanobelts[J]. Journal of Semiconductors, 2025, 46(3): 032702. doi: 10.1088/1674-4926/24080023 ****T H Lin, W D Yao, Z Y Liu, H Z Wang, D H Li, and X L Zhang, Broadband full-stokes polarimeter based on ReS2 nanobelts[J]. J. Semicond., 2025, 46(3), 032702 doi: 10.1088/1674-4926/24080023
      Citation:
      Tinghao Lin, Wendian Yao, Zeyi Liu, Haizhen Wang, Dehui Li, and Xinliang Zhang. Broadband full-stokes polarimeter based on ReS2 nanobelts[J]. Journal of Semiconductors, 2025, 46(3): 032702. doi: 10.1088/1674-4926/24080023 ****
      T H Lin, W D Yao, Z Y Liu, H Z Wang, D H Li, and X L Zhang, Broadband full-stokes polarimeter based on ReS2 nanobelts[J]. J. Semicond., 2025, 46(3), 032702 doi: 10.1088/1674-4926/24080023

      Broadband full-stokes polarimeter based on ReS2 nanobelts

      DOI: 10.1088/1674-4926/24080023
      CSTR: 32376.14.1674-4926.24080023
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      • Tinghao Lin received his bachelor’s degree in 2016 from Hubei University, his master’s degree in 2019 from Huazhong Agricultural University and his Ph. D. degree in 2024 from Huazhong University of Science and Technology (China). His research interest focuses on polarization-sensitive photodetectors
      • Dehui Li received his B. S. degree in 2006 from Xi’an Jiaotong University (Xi’an, China), and his Ph. D. degree in 2013 from Nanyang Technological University (Singapore). He worked in University of California, Los Angeles as postdoctoral fellow and then joined Huazhong University of Science and Technology as a professor in 2016. His current research focuses on rational design and synthesis of low-dimensional functional semiconducting nanomaterials and heterostructures such as two-dimensional perovskites, systematic investigations on their physical properties and exploring their potential applications in nanoelectronics and nanophotonic such as field-effect transistors, photodetectors, light-emitting devices and valleytronic devices
      • and Xinliang Zhang:Xinliang Zhang received his PhD in physical electronics from the HUST, Wuhan, China, in 2001. He is currently the president of Xidian University and a professor at the Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information of HUST. He is the author or coauthor of more than 400 journal articles. His current research interest is optoelectronic devices and integration. In 2016, he was elected as in OSA fellow
      • Corresponding author: dehuili@hust.edu.cnxlzhang@mail.hust.edu.cn
      • Received Date: 2024-07-23
      • Revised Date: 2024-11-08
      • Available Online: 2024-11-29

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