J. Semicond. > 2025, Volume 46 > Issue 4 > 042702
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ARTICLES

Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

Mikhail K. Sotnichuk1, Anton V. Ikonnikov1, , Dmitry R. Khokhlov1, Nikolay N. Mikhailov2, Sergey A. Dvoretsky2 and Vladimir I. Gavrilenko3

+ Author Affiliations

 Corresponding author: Anton V. Ikonnikov, antikon@physics.msu.ru

DOI: 10.1088/1674-4926/24090023CSTR: 32376.14.1674-4926.24090023

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Abstract: In this work, we studied the persistent photoconductivity (PPC) spectra in single HgTe/CdHgTe quantum wells with different growth parameters and different types of dark conductivity. The studies were performed in a wide radiation quantum energy range of 0.62–3.1 eV both at T = 4.2 K and at T = 77 K. Common features of the PPC spectra for all structures were revealed, and their relation to the presence of a CdTe cap layer in all structures and the appropriate cadmium fraction in the CdHgTe barrier layers was shown. One of the features was associated with the presence of a deep level in the CdTe layer. In addition, the oscillatory behavior of the PPC spectra in the region from 0.8–1.1 eV to 1.2–1.5 eV was observed. It is associated with the cascade emission of longitudinal optical phonons in CdHgTe barrier.

Key words: quantum well, CdHgTe, persistent photoconductivity, heterostructure, spectroscopy



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Fig. 1.  (Color online) Diagram of the structures under study. Indium doping layers are present only in some structures.

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Fig. 2.  (Color online) (a) Kinetics of the resistance of the structure 170301p during the transition from the dark to the illuminated state. (b) and (c) Kinetics of the resistance of the structures (b) 091225n and (c) 100708*n during the transition between different illuminated states.

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Fig. 3.  (Color online) PPC spectra of structures (a) 170301p, (b) 091225n, and (c) 100708*n. The solid lines correspond to continuous measurements: 1—the sweep is from lower energies to higher ones, 2—from higher to lower ones. The yellow squares and dark hexagons correspond to the steady-state resistance values obtained via point-by-point scanning with the illumination on and after the illumination was turned off, respectively. For structures 091225n and 100708*n, the electron concentration values determined from transport measurements are also indicated by asterisks. The horizontal dashed lines indicate the dark values of resistance and concentration.

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Fig. 4.  (Color online) Spectra of relative conductivity change of the CdHgTe-based QW heterostructures at T = 4.2 K. The zero level means that the conductivity coincides with the 'dark' one, positive values correspond to a positive PPC, and negative values correspond to a negative PPC. The level –1 means no conductivity. The main spectral features are indicated by inverted numbers. Solid arrows indicate the position of features 2 and 3. Dash–dotted arrows mark the energy of feature 3 plus 0.315 eV. The vertical dotted line indicates the value of the CdTe bandgap (EgCdTe), the dash–dotted line indicates the energy difference between the conduction band and the deep level in the CdTe cap layer, and the dashed line indicates the position of feature 4.

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Fig. 5.  (Color online) Spectra of relative conductivity change of the CdHgTe-based QW heterostructures at T = 77 K. The zero level means that the conductivity coincides with the 'dark' one, positive values correspond to a positive PPC, and negative values correspond to a negative PPC. The level –1 means no conductivity. The main spectral features are indicated by inverted numbers. Solid arrows indicate the position of features 2 and 3. Dash–dotted arrows mark the energy of feature 3 plus 0.315 eV. The vertical dotted line indicates the EgCdTe value, and the dash–dotted line indicates the energy difference between the conduction band and the deep level in the CdTe cap layer.

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Fig. 6.  (Color online) Typical energy diagram of the studied structures at T = 4.2 K using the structure 091225n as an example. The energies are given in meV. Ec is the position of the bottom of the conduction band, Ev is the position of the top of the valence band, Eso is the position of the top of the spin-split band. The dotted lines with numbers show the transitions that cause the corresponding features in the PPC spectra. The gray lines with letters show the hypothetical transitions considered while interpreting feature 3 (see text).

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Fig. 7.  (Color online) Theoretical dependences of the energy between the spin-split band in the Cd1–xHgxTe barrier and the conduction band of the CdTe cap layer (solid line), as well as the experimental positions of feature 2 (symbols), obtained from the analysis of the PPC spectra measured at T = 4.2 K (a) and T = 77 K (b). Each symbol corresponds to a specific structure. For the left figure, the data from Ref. [33] are additionally shown by triangles.

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Fig. 8.  (Color online) Dependences of the spectral position of feature 3 (symbols) and the energy of the transition from the deep level located 0.315 eV above the top of the valence band of CdTe to the conduction band of the CdxHg1–xTe barrier (solid line) on the cadmium fraction x in the barrier at T = 4.2 K (a) and T = 77 K (b). Each symbol corresponds to a specific structure. For the left figure, the data from Ref. [33] are additionally shown by triangles. The calculated energies of the hypothetical a–d transitions are also additionally indicated in the left figure (see text).

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Fig. 9.  (Color online) Dependences of the oscillation period in the PPC spectra obtained at T = 4.2 K (solid symbols) and at T = 77 K (open symbols) of all studied structures on the quantum energy of the incident radiation. Symbols of the same shape correspond to a specific structure. Additionally, data from the Ref. [35] (crosses) are given, in which HgTe/CdHgTe heterostructures with different cap layers were studied. Solid lines show similar dependencies at T = 0 K calculated for different compositions of bulk Cd1–xHgxTe (the left boundary of the line corresponds to the bandgap). The inset shows the PPC spectra of some structures in the energy range of 0.7–1.6 eV (the scale along the ordinate axis is chosen individually for each spectrum). The spectra clearly show oscillatory behaviour, the maxima of oscillations are marked by thin vertical lines.

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Table 1.   Parameters of the structures under study. The parameters specified based on the results of measuring the magnetoabsorption spectra and/or photoconductivity spectra at different temperatures are given in brackets. An asterisk in the number means that the structure was annealed, which should lead to the formation of additional acceptors (mercury vacancies). The subscript in the number indicates the type of low-temperature dark conductivity. Band spectrum types: N—normal, GL—gapless, I—inverted. Rdark—resistance of the sample after cooling in the absence of special illumination. n (p) is the 'dark' concentration and type of charge carriers, μn (μp) is the corresponding mobility.

Structure dQW
(nm)		 y (%) dbar
(nm)		 x (%) In doped Annealed dcap
(nm)		 Band
structure		 n (p)
(1011 cm–2)
(T = 4.2 К)		 μn (μp) (103 cm2/(V·s))
(T = 4.2 К)		 Rdark (kΩ)
(T = 4.2 К)		 Rdark (kΩ)
(T = 77 K)
101109n 8 0 60 77 √ 50 I 5 (n) 100 0.05 0.05
091217-1n 7 0 33 72 √ 40 I 1.8 (n) 50 3.7 1.43
091225n 30 18 (12) 100 69 50 GL 0.05 (n) 600 2.24 0.83
091225-1 30 18 (13) 100 72 50 N Insulator Insulator 300 1.8
100708n 30 16 (13) 100 56 57 GL 0.7 (n) 480 0.3 0.29
100708*n 30 16 (13) 100 56 √ 57 GL 1.8 (n) 45 1.4 0.8
100707-1 30 19 100 70 50 N Insulator Insulator 150 100
100707-1* 30 19 100 70 √ 50 N Insulator Insulator 140 70
170301p 9 0 (8) 30 71 50 N 0.3 (p) 3.7 80 62
170303p 9 10 30 71 50 N 0.5 (p) 3 30 56
130410p 5 (4) 0 20 53 20 N 2 (p) 0.3 70 600
130410*p 5 (4) 0 20 53 √ 20 N 1.9 (p) 0.2 81 170
110622p 5.6 (4.6) 0 35 65 40 N 0.9 (p) 9 5 1500
DownLoad: CSV
[1]
König M, Wiedmann S, Brüne C, et al. Quantum spin hall insulator state in HgTe quantum wells. Science, 2007, 318, 766 doi: 10.1126/science.1148047
[2]
Hasan M Z, Kane C L. Colloquium: Topological insulators. Rev Mod Phys, 2010, 82, 3045 doi: 10.1103/RevModPhys.82.3045
[3]
Fu L. Topological crystalline insulators. Phys Rev Lett, 2011, 106, 106802 doi: 10.1103/PhysRevLett.106.106802
[4]
Tanaka Y, Ren Z, Sato T, et al. Experimental realization of a topological crystalline insulator in SnTe. Nat Phys, 2012, 8, 800 doi: 10.1038/nphys2442
[5]
Tokura Y, Yasuda K, Tsukazaki A. Magnetic topological insulators. Nat Rev Phys, 2019, 1, 126 doi: 10.1038/s42254-018-0011-5
[6]
Schindler F, Cook A M, Vergniory M G, et al. Higher-order topological insulators. Sci Adv, 2018, 4, eaat0346 doi: 10.1126/sciadv.aat0346
[7]
Chen Y L, Analytis J G, Chu J H, et al. Experimental realization of a three-dimensional topological insulator, Bi2Te3. Science, 2009, 325, 178 doi: 10.1126/science.1173034
[8]
Kuroda K, Miyahara H, Ye M, et al. Experimental verification of PbBi2Te4 as a 3D topological insulator. Phys Rev Lett, 2012, 108, 206803 doi: 10.1103/PhysRevLett.108.206803
[9]
Liu C C, Feng W X, Yao Y G. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys Rev Lett, 2011, 107, 076802 doi: 10.1103/PhysRevLett.107.076802
[10]
Zhou J J, Feng W X, Liu C C, et al. Large-gap quantum spin Hall insulator in single layer bismuth monobromide Bi4Br4. Nano Lett, 2014, 14, 4767 doi: 10.1021/nl501907g
[11]
Ma Y D, Kou L Z, Dai Y, et al. Proposed two-dimensional topological insulator in SiTe. Phys Rev B, 2016, 94, 201104(R doi: 10.1103/PhysRevB.94.201104
[12]
Knez I, Du R R, Sullivan G. Evidence for helical edge modes in inverted InAs/GaSb quantum wells. Phys Rev Lett, 2011, 107, 136603 doi: 10.1103/PhysRevLett.107.136603
[13]
Bampoulis P, Castenmiller C, Klaassen D J, et al. Quantum spin hall states and topological phase transition in germanene. Phys Rev Lett, 2023, 130, 196401 doi: 10.1103/PhysRevLett.130.196401
[14]
Wu S F, Fatemi V, Gibson Q D, et al. Observation of the quantum spin Hall effect up to 100 kelvin in a monolayer crystal. Science, 2018, 359, 76 doi: 10.1126/science.aan6003
[15]
Fei Z Y , Palomaki T, Wu S F, et al. Edge conduction in monolayer WTe2. Nat Phys, 2017, 13, 677 doi: 10.1038/nphys4091
[16]
Liu C, Culcer D, Wang Z N, et al. Helical edge transport in millimeter-scale thin films of Na3Bi. Nano Lett, 2020, 20, 6306 doi: 10.1021/acs.nanolett.0c01649
[17]
Lunczer L, Leubner P, Endres M, et al. Approaching quantization in macroscopic quantum spin hall devices through gate training. Phys Rev Lett, 2019, 123, 047701 doi: 10.1103/PhysRevLett.123.047701
[18]
Weber B, Fuhrer M S, Sheng X L, et al. 2024 roadmap on 2D topological insulators. J Phys Mater, 2024, 7, 022501 doi: 10.1088/2515-7639/ad2083
[19]
Krishtopenko S S, Yahniuk I, But D B, et al. Pressure- and temperature-driven phase transitions in HgTe quantum wells. Phys Rev B, 2016, 94, 245402 doi: 10.1103/PhysRevB.94.245402
[20]
Kvon Z D, Olshanetsky E B, Novik E G, et al. Two-dimensional electron-hole system in HgTe-based quantum wells with surface orientation (112). Phys Rev B, 2011, 83, 193304 doi: 10.1103/PhysRevB.83.193304
[21]
Bernevig B A, Zhang S C. Quantum spin Hall effect. Phys Rev Lett, 2006, 96, 106802 doi: 10.1103/PhysRevLett.96.106802
[22]
Kastalsky A, Hwang J C M. Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction. Solid State Commun, 1984, 51, 317 doi: 10.1016/0038-1098(84)90696-3
[23]
Anderson D A, Bass S J, Kane M J, et al. Transport and persistent photoconductivity in InGaAs/InP single quantum wells. Appl Phys Lett, 1986, 49, 1360 doi: 10.1063/1.97324
[24]
Tuttle G, Kroemer H, English J H. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells. J Appl Phys, 1989, 65, 5239 doi: 10.1063/1.343167
[25]
Gauer C, Scriba J, Wixforth A, et al. Photoconductivity in AlSb/InAs quantum wells. Semicond Sci Technol, 1993, 8, S137 doi: 10.1088/0268-1242/8/1S/031
[26]
Lo I, Mitchel W C, Manasreh M O, et al. Negative persistent photoconductivity in the Al0.6Ga0.4Sb/InAs quantum wells. Appl Phys Lett, 1992, 60, 751 doi: 10.1063/1.106558
[27]
Chaves A S, Chacham H. Negative photoconductivity in semiconductor heterostructures. Appl Phys Lett, 1995, 66, 727 doi: 10.1063/1.114113
[28]
Tsai L C, Huang C F, Fan J C, et al. Persistent photoconductivity in SiGe/Si quantum wells. J Appl Phys, 1998, 84, 877 doi: 10.1063/1.368150
[29]
Wang W C, Tsai L C, Fan J C, et al. Positive and negative persistent photoconductivities in semimetallic Al xGa1– xSb/InAs quantum wells. J Appl Phys, 1999, 86, 3152 doi: 10.1063/1.371182
[30]
Aleshkin V Y, Gavrilenko V I, Gaponova D M, et al. Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures. Semicond, 2005, 39, 22 doi: 10.1134/1.1852637
[31]
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    Received: 10 September 2024 Revised: 03 December 2024 Online: Accepted Manuscript: 23 December 2024Uncorrected proof: 26 February 2025Published: 10 April 2025

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      Article Navigation >  Journal of Semiconductors  > 2025  >  46(4): 042702
      Mikhail K. Sotnichuk, Anton V. Ikonnikov, Dmitry R. Khokhlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Vladimir I. Gavrilenko. Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J]. Journal of Semiconductors, 2025, 46(4): 042702. doi: 10.1088/1674-4926/24090023 ****M K Sotnichuk, A V Ikonnikov, D R Khokhlov, N N Mikhailov, S A Dvoretsky, and V I Gavrilenko, Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J]. J. Semicond., 2025, 46(4), 042702 doi: 10.1088/1674-4926/24090023
      Citation:
      Mikhail K. Sotnichuk, Anton V. Ikonnikov, Dmitry R. Khokhlov, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Vladimir I. Gavrilenko. Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J]. Journal of Semiconductors, 2025, 46(4): 042702. doi: 10.1088/1674-4926/24090023 ****
      M K Sotnichuk, A V Ikonnikov, D R Khokhlov, N N Mikhailov, S A Dvoretsky, and V I Gavrilenko, Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures[J]. J. Semicond., 2025, 46(4), 042702 doi: 10.1088/1674-4926/24090023
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      Features of persistent photoconductivity in CdHgTe-based single quantum well heterostructures

      DOI: 10.1088/1674-4926/24090023
      CSTR: 32376.14.1674-4926.24090023
      • 1.

        Faculty of Physics, Lomonosov Moscow State University, Moscow 119991, Russia

      • 2.

        Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia

      • 3.

        Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod 603950, Russia

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      • Mikhail K. Sotnichuk is currently a student of the Faculty of Physics of Lomonosov Moscow State University (graduation year 2027). His research interests include narrow-band quantum well heterostructures, photoconductivity and persistent photoconductivity effects
      • Anton V. Ikonnikov received his PhD in Physics and Mathematics from the Institute of Physics of Microstructures of the Russian Academy of Sciences (Nizhny Novgorod, Russia) in 2006. He is currently a senior research fellow at the Faculty of Physics of Lomonosov Moscow State University. His research focuses on the spectroscopy of both bulk and two-dimensional systems based on narrow-gap semiconductors. He is also involved in the research and development of terahertz quantum cascade lasers
      • Corresponding author: antikon@physics.msu.ru
      • Received Date: 2024-09-10
      • Revised Date: 2024-12-03
        • Available Online: 2024-12-23

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