Abstract: This paper presents an implementation for improving muti-level cell NOR flash memory program throughput based on the channel hot electron (CHE) temperature characteristic. The CHE I_g temperature characteristic is analyzed theoretically with the Lucky electron model, and a temperature self-adaptive programming algorithm is proposed to increase I_g according to the on-die temperature. Experimental results show that the program throughput increases significantly from 1.1 MByte/s without temperature self-adaptive programming to 1.4 MByte/s with the proposed method at room temperature. This represents a 30% improvement and is 70 times faster than the program throughput in Ref. [1].

Key words: temperature self-adaptive programming; 65 nm multi-level cell flash memory; program throughput