
SEMICONDUCTOR INTEGRATED CIRCUITS
Wang Huan, Wang Zhigong, Xu Jian, Luo Yin, Miao Peng, Yang Siyong and Li Wei
Abstract: A fast automatic power control (APC) circuit for a laser diode driver (LDD) has been implemented in a 0.6-μm BiCMOS process. The APC circuit adopts double-loops and variable-bandwidth techniques to achieve a turnon time of < 400 μs for most kinds of TOSAs. Thus, it meets the small form-factor pluggable (SFP) agreement. Such techniques make a good tradeoff between stability, accuracy, turn-on time, noise and convenience. The measured results indicate that the APC circuit is suitable for SFP LDD.
Key words: APC, LDD, turn-on time, SFP
1 |
Effects of the fluorine plasma treatment on low-density drain AlGaN/GaN HEMT Chong Wang, Xiaoxiao Wei, Yunlong He, Xuefeng Zheng, Xiaohua Ma, et al. Journal of Semiconductors, 2016, 37(6): 064009. doi: 10.1088/1674-4926/37/6/064009 |
2 |
Jizhi Liu, Zhiwei Liu, Ze Jia, Juin. J Liou Journal of Semiconductors, 2014, 35(6): 064010. doi: 10.1088/1674-4926/35/6/064010 |
3 |
Said Benramache, Foued Chabane, Boubaker Benhaoua, Fatima Z. Lemmadi Journal of Semiconductors, 2013, 34(2): 023001. doi: 10.1088/1674-4926/34/2/023001 |
4 |
Chuan He, Lingli Jiang, Hang Fan, Bo Zhang Journal of Semiconductors, 2013, 34(1): 014006. doi: 10.1088/1674-4926/34/1/014006 |
5 |
Turn-on and turn-off voltages of an avalanche p-n junction Zhang Guoqing, Han Dejun, Zhu Changjun, Zhai Xuejun Journal of Semiconductors, 2012, 33(9): 094003. doi: 10.1088/1674-4926/33/9/094003 |
6 |
GIDL current degradation in LDD nMOSFET under hot hole stress Chen Haifeng, Ma Xiaohua, Guo Lixin, Du Huimin Journal of Semiconductors, 2011, 32(11): 114001. doi: 10.1088/1674-4926/32/11/114001 |
7 |
A 1.25 Gb/s laser diode driver with pulse width optimization Wang Huan, Wang Zhigong, Xu Jian, Wang Rong, Miao Peng, et al. Journal of Semiconductors, 2010, 31(9): 095004. doi: 10.1088/1674-4926/31/9/095004 |
8 |
Degradation of ultra-thin gate oxide LDD NMOSFET under GIDL stress Hu Shigang, Hao Yue, Cao Yanrong, Ma Xiaohua, Wu Xiaofeng, et al. Journal of Semiconductors, 2009, 30(4): 044004. doi: 10.1088/1674-4926/30/4/044004 |
9 |
Turn-On Mechanism of a Light-Activated SiC Heterojuntion Darlington HBT Pu Hongbin, Chen Zhiming Chinese Journal of Semiconductors , 2005, 26(S1): 143-146. |
10 |
一种适用于短沟道LDD MOSFET参数提取的改进方法(英文) Chinese Journal of Semiconductors , 2004, 25(10): 1215-1220. |
11 |
包含衬底电流的LDD MOSFET输出I-V特性的经验模型分析(英文) Chinese Journal of Semiconductors , 2004, 25(7): 778-783. |
12 |
Chinese Journal of Semiconductors , 2003, 24(5): 510-515. |
13 |
Chinese Journal of Semiconductors , 2003, 24(8): 892-896. |
14 |
Chinese Journal of Semiconductors , 1994, 15(9): 603-610. |
15 |
Chinese Journal of Semiconductors , 1994, 15(5): 361-366. |
16 |
Chinese Journal of Semiconductors , 1993, 14(4): 242-246. |
17 |
Chinese Journal of Semiconductors , 1992, 13(7): 423-429. |
18 |
应用于VLSI的PSSWS-LDD MOSFET优化工艺研究 Chinese Journal of Semiconductors , 1990, 11(2): 127-135. |
19 |
Chinese Journal of Semiconductors , 1990, 11(2): 136-139. |
20 |
Chinese Journal of Semiconductors , 1989, 10(10): 754-762. |
Article views: 4307 Times PDF downloads: 4372 Times Cited by: 0 Times
Received: 18 August 2015 Revised: 27 January 2010 Online: Published: 01 June 2010
Citation: |
Wang Huan, Wang Zhigong, Xu Jian, Luo Yin, Miao Peng, Yang Siyong, Li Wei. A fast automatic power control circuit for a small form-factor pluggable laser diode drive[J]. Journal of Semiconductors, 2010, 31(6): 065014. doi: 10.1088/1674-4926/31/6/065014
****
Wang H, Wang Z G, Xu J, Luo Y, Miao P, Yang S Y, Li W. A fast automatic power control circuit for a small form-factor pluggable laser diode drive[J]. J. Semicond., 2010, 31(6): 065014. doi: 10.1088/1674-4926/31/6/065014.
|
Journal of Semiconductors © 2017 All Rights Reserved 京ICP备05085259号-2