J. Semicond. > 2013, Volume 34 > Issue 1 > 013003
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SEMICONDUCTOR MATERIALS

Cu doped AlSb polycrystalline thin films

Lili Wu, Shuo Jin, Guanggen Zeng, Jingquan Zhang, Wei Li, Lianghuan Feng, Bing Li and Wenwu Wang

+ Author Affiliations

 Corresponding author: Zeng Guanggen, Email:yigezeng@sina.com.cn

DOI: 10.1088/1674-4926/34/1/013003

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Abstract: Cu-doped AlSb polycrystalline films were grown on quartz glass by magnetron co-sputtering. The structural, morphological and electrical properties of the films were studied. The incorporation of copper atoms can result in the increase of lattice constants, and annealing is helpful to eliminate this deformation. Cu-doped AlSb films exhibit weak n-type conductivity. The results show that the doping effect has a close relationship with the annealing process, meaning that the position of Cu atom in AlSb polycrystalline films might influence the doping effect.

Key words: dope, AlSb film, conductivity activation energy



[1]
Armantrout G A, Yee J H. AlSb as a potential photovoltaic material. Proceedings 2nd Photovoltaic Solar Energy Conference, Berlin, West Germany, 1979:960
[2]
Song H, He J, Wu L, et al. Study on AlSb polycrystalline thin films material. Journal of Inorganic Materials, 2009, 24(3):517 doi: 10.3724/SP.J.1077.2009.00517
[3]
Lal K, Srivastava A K, Singh S, et al. Effect of process conditions on microstructural development during thermal evaporation of AlSb thin films. J Mater Sci Lett, 2003, 22(7):515 doi: 10.1023/A:1022934302798
[4]
Singh T, Bedi R K. Growth and properties of aluminum antimonide films produced by hot wall epitaxy on single-crystal KCl. Thin Solid Films, 1998, 312(1/2):111
[5]
He J, Wu L, Feng L, et al. Structural, electrical and optical properties of annealed Al/Sb multilayer films. Solar Energy Materials & Solar Cells, 2011, 95(1):369
[6]
Hao X, Wu L, Huang Z, et al. Study on AlSb films deposited by co-sputtering. Asia-Pacific Power and Energy Engineering Conference (APPEEC), 2010: 28
[7]
Huang Zheng, Wu Lili, Li Bing, et al. The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing. Chin Phys B, 2010, 19(12):127204 doi: 10.1088/1674-1056/19/12/127204
[8]
Turner W J, Reese W E. Infrared absorption in n-type aluminum antimonide. Phys Rev Lett, 1960, 117(4):1003
[9]
Hill P, Weisse-Bernstein N, Dawson L R, et al. Activation energies for Te and Be in metamorphically grown AlSb and InxAl1-xSb layers. Appl Phys Lett, 2005, 87(9):092105 doi: 10.1063/1.2032591
[10]
Yu K M, Moll A J, Chan N, et al. Substitutionality of Ge atoms in ion implanted AlSb. Appl Phys Lett, 1995, 66(18):2406 doi: 10.1063/1.113955
[11]
Shaw D, Jones P, Hazelby D. Zinc diffusion in aluminum antimonide. Proceedings of Physical Society, 1962, 80(1):167 doi: 10.1088/0370-1328/80/1/320
[12]
Wieber R H, Gorton H C, Peet C S. Diffusion of copper into AlSb. J Appl Phys, 1960, 31(3):608
Fig. 1.  XRD patterns of AlSb and AlSb:Cu films. (a) Full scale. (b) Enlarged scale.

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Fig. 2.  (a) $\ln\sigma{_{\rm dark}}$–1/$T$ curves of the heating of AlSb films. (b) $\ln\sigma{_{\rm dark}}$–1/$T$ curves of heating-up of as-deposited AlSb:Cu films. (c) $\ln\sigma{_{\rm dark}}$–1/$T$ curves of heating-up of AlSb:Cu films annealed for 30 min.

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Fig. 3.  Morphology of as-deposited Cu doped AlSb thin films.

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Table 1.   Lattice constants of AlSb and AlSb:Cu films.

Table 2.   Values of the conductivity activation energy of different AlSb films.
[1]
Armantrout G A, Yee J H. AlSb as a potential photovoltaic material. Proceedings 2nd Photovoltaic Solar Energy Conference, Berlin, West Germany, 1979:960
[2]
Song H, He J, Wu L, et al. Study on AlSb polycrystalline thin films material. Journal of Inorganic Materials, 2009, 24(3):517 doi: 10.3724/SP.J.1077.2009.00517
[3]
Lal K, Srivastava A K, Singh S, et al. Effect of process conditions on microstructural development during thermal evaporation of AlSb thin films. J Mater Sci Lett, 2003, 22(7):515 doi: 10.1023/A:1022934302798
[4]
Singh T, Bedi R K. Growth and properties of aluminum antimonide films produced by hot wall epitaxy on single-crystal KCl. Thin Solid Films, 1998, 312(1/2):111
[5]
He J, Wu L, Feng L, et al. Structural, electrical and optical properties of annealed Al/Sb multilayer films. Solar Energy Materials & Solar Cells, 2011, 95(1):369
[6]
Hao X, Wu L, Huang Z, et al. Study on AlSb films deposited by co-sputtering. Asia-Pacific Power and Energy Engineering Conference (APPEEC), 2010: 28
[7]
Huang Zheng, Wu Lili, Li Bing, et al. The electrical, optical properties of AlSb polycrystalline thin films deposited by magnetron co-sputtering without annealing. Chin Phys B, 2010, 19(12):127204 doi: 10.1088/1674-1056/19/12/127204
[8]
Turner W J, Reese W E. Infrared absorption in n-type aluminum antimonide. Phys Rev Lett, 1960, 117(4):1003
[9]
Hill P, Weisse-Bernstein N, Dawson L R, et al. Activation energies for Te and Be in metamorphically grown AlSb and InxAl1-xSb layers. Appl Phys Lett, 2005, 87(9):092105 doi: 10.1063/1.2032591
[10]
Yu K M, Moll A J, Chan N, et al. Substitutionality of Ge atoms in ion implanted AlSb. Appl Phys Lett, 1995, 66(18):2406 doi: 10.1063/1.113955
[11]
Shaw D, Jones P, Hazelby D. Zinc diffusion in aluminum antimonide. Proceedings of Physical Society, 1962, 80(1):167 doi: 10.1088/0370-1328/80/1/320
[12]
Wieber R H, Gorton H C, Peet C S. Diffusion of copper into AlSb. J Appl Phys, 1960, 31(3):608

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    Received: 15 May 2012 Revised: 20 August 2012 Online: Published: 01 January 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(1): 013003
      Lili Wu, Shuo Jin, Guanggen Zeng, Jingquan Zhang, Wei Li, Lianghuan Feng, Bing Li, Wenwu Wang. Cu doped AlSb polycrystalline thin films[J]. Journal of Semiconductors, 2013, 34(1): 013003. doi: 10.1088/1674-4926/34/1/013003 ****L L Wu, S Jin, G G Zeng, J Q Zhang, W Li, L H Feng, B Li, W W Wang. Cu doped AlSb polycrystalline thin films[J]. J. Semicond., 2013, 34(1): 013003. doi: 10.1088/1674-4926/34/1/013003.
      Citation:
      Lili Wu, Shuo Jin, Guanggen Zeng, Jingquan Zhang, Wei Li, Lianghuan Feng, Bing Li, Wenwu Wang. Cu doped AlSb polycrystalline thin films[J]. Journal of Semiconductors, 2013, 34(1): 013003. doi: 10.1088/1674-4926/34/1/013003 ****
      L L Wu, S Jin, G G Zeng, J Q Zhang, W Li, L H Feng, B Li, W W Wang. Cu doped AlSb polycrystalline thin films[J]. J. Semicond., 2013, 34(1): 013003. doi: 10.1088/1674-4926/34/1/013003.
      shu

      Cu doped AlSb polycrystalline thin films

      DOI: 10.1088/1674-4926/34/1/013003

      • College of Materials Science and Engineering, Sichuan University, Chengdu 610064, China

      Funds:

      the National Basic Research Program of China 2011CBA00708

      Project supported by the National Basic Research Program of China (No.2011CBA00708)

      More Information
      • Corresponding author: Zeng Guanggen, Email:yigezeng@sina.com.cn
      • Received Date: 2012-05-15
      • Revised Date: 2012-08-20
      • Published Date: 2013-01-01

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