Fig. 1.
Variation of mean square noise voltage per unit band width as a function of frequency for different values of $x_{\rm g}/W$ depicting the effect of the tunneling current.
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Deepak K. Karan, Pranati Panda, G. N. Dash. Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode[J]. Journal of Semiconductors, 2013, 34(1): 014001. doi: 10.1088/1674-4926/34/1/014001
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D K Karan, P Panda, G N Dash. Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode[J]. J. Semicond., 2013, 34(1): 014001. doi: 10.1088/1674-4926/34/1/014001.
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Effect of tunneling current on the noise characteristics of a 4H-SiC Read Avalanche diode
DOI: 10.1088/1674-4926/34/1/014001
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Abstract
Noise characteristics of a Read Avalanche diode are analyzed by incorporating the tunneling mechanism of the electron into the avalanche mechanism. Analytical expressions are presented for the mean square noise voltage and noise measure in MITATT (mixed tunneling and avalanche transit time) mode operation. A wide band gap semiconductor (4H-SiC) based MITATT diode is considered to study the effect of tunneling on the noise characteristics and negative conductance. While exhibiting enough potential for 4H-SiC to be used as a terahertz source of power in the MITATT mode, our results record a noise measure of 35.18 dB at a frequency of 1.5 THz. -
References
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