Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

Aritra Acharyya; Jit Chakraborty; Kausik Das; Subir Datta; Pritam De; Suranjana Banerjee; J.P. Banerjee

doi:10.1088/1674-4926/34/10/104003

J. Semicond. > 2013, Volume 34 > Issue 10 > 104003

SEMICONDUCTOR DEVICES

Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

Aritra Acharyya¹, Jit Chakraborty², Kausik Das², Subir Datta², Pritam De², Suranjana Banerjee³ and J.P. Banerjee¹

+ Author Affiliations

Corresponding author: Aritra Acharyya, ari_besu@yahoo.co.in

DOI: 10.1088/1674-4926/34/10/104003

Abstract: The authors have carried out the large-signal characterization of silicon-based double-drift region (DDR) impact avalanche transit time (IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation. The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies. Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69 mW with 7.95% conversion efficiency at 94 GHz for 50% voltage modulation, whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation. The simulation results are compared with the experimental results and are found to be in close agreement.

Key words: band to band tunneling, DDR silicon IMPATTs, large-signal simulation, millimeter-wave, series resistance, terahertz regime

References

[1]	Midford T A, Bernick R L. Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans Microw Theory Tech, 1979, 27:483 doi: 10.1109/TMTT.1979.1129653
[2]	Chang Y, Hellum J M, Paul J A, et al. Millimeter-wave IMPATT sources for communication applications. IEEE MTT-S International Microwave Symposium Digest, 1977:216 http://ieeexplore.ieee.org/document/1124410/
[3]	Gray W W, Kikushima L, Morentc N P, et al. Applying IMPATT power sources to modern microwave systems. IEEE J Solid-State Circuits, 1969, 4:409 doi: 10.1109/JSSC.1969.1050046
[4]	Miswa T. Negative resistance in p-n junctions under avalanche breakdown conditions. IEEE Trans Electron Devices, 1966, 33:137 http://adsabs.harvard.edu/abs/1966ITED...13..143.
[5]	Gilden M, Hines M E. Electronic tuning effects in the read microwave avalanche diode. IEEE Trans Electron Devices, 1966, 13(1):169 http://adsabs.harvard.edu/abs/1966ITED...13E.169G
[6]	Gummel H K, Scharfetter D L. Avalanche region of IMPATT diodes. Bell Syst Tech J, 1966, 45:1797 doi: 10.1002/bltj.1966.45.issue-10
[7]	Roy S K, Sridharan M, Ghosh R, et al. Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer. In:Miller J H, ed. Proceedings of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE Ⅰ), Dublin, Ireland, 1979:266 http://www.oalib.com/paper/3065525
[8]	Roy S K, Banerjee J P, Pati S P. A computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT diodes. Proceedings of 4th Conf on Num Anal of Semiconductor Devices (NASECODE Ⅳ), Dublin:Boole, 1985:494 doi: 10.1007%2FBF00619715.pdf
[9]	Acharyya A, Banerjee S, Banerjee J P. Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. J Electron Devices, 2012, 12:725 doi: 10.1007%2F978-81-322-2012-1_51.pdf
[10]	Acharyya A, Mukherjee M, Banerjee J P. Influence of tunnel current on DC and dynamic properties of silicon based terahertz IMPATT source. Terahertz Science and Technology, 2011, 4:26 doi: 10.1080/00207217.2014.982211?scroll=top&needAccess=true
[11]	Acharyya A, Banerjee S, Banerjee J P. Effect of package parasitics on the millimeter-wave performance of DDR silicon IMPATT device operating at W-band. J Electron Devices, 2012, 13:960 http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.667.5333&rep=rep1&type=pdf
[12]	Acharyya A, Banerjee J P. Design and optimization of pulsed mode silicon based DDR IMPATT diode operating at 0.3 THz. International Journal of Engineering Science and Technology, 2011, 3:332 http://www.oalib.com/paper/2111670
[13]	Gummel H K, Blue J L. A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans Electron Devices, 1967, 14(9):569 doi: 10.1109/T-ED.1967.16005
[14]	Evans W J, Haddad G I. A large-signal analysis of IMPATT diodes. IEEE Trans Electron Devices, 1968, 15(10):708 doi: 10.1109/T-ED.1968.16503
[15]	Scharfetter D L, Gummel H K. Large-signal analysis of a silicon read diode oscillator. IEEE Trans Electron Devices, 1969, 6(1):64 doi: 10.1007/s10825-006-0016-7
[16]	Gupta M S, Lomax R J. A current-excited large-signal analysis of IMPATT devices and its circuit implementations. IEEE Trans Electron Devices, 1973, 20:395 doi: 10.1109/T-ED.1973.17661
[17]	Acharyya A, Banerjee J P. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Applied Nanoscience, 2012, DOI: DOI:10.1007/s13204-012-0172-y
[18]	Acharyya A, Banerjee J P. Potentiality of IMPATT devices as terahertz source:an avalanche response time based approach to determine the upper cut-off frequency limits. IETE Journal of Research, 2013, 59, in press doi: 10.4103/0377-2063.113029
[19]	Acharyya A, Banerjee S, Banerjee J P. Calculation of avalanche response time for determining the high frequency performance limitations of IMPATT devices. J Electron Devices, 2012, 12:756
[20]	Acharyya A, Banerjee J P. Analysis of photo-irradiated double-drift region silicon impact avalanche transit time devices in the millimeter-wave and terahertz regime. Terahertz Science and Technology, 2012, 5:97 doi: 10.1080/00207217.2013.830460?src=recsys
[21]	Acharyya A, Banerjee S, Banerjee J P. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. Journal of Semiconductors, 2013, 34:024001 doi: 10.1088/1674-4926/34/2/024001
[22]	Acharyya A, Banerjee S, Banerjee J P. Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radioengineering, 2012, 21:1218 doi: 10.1007/s10825-013-0470-y
[23]	Acharyya A, Banerjee S, Banerjee J P. A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots. International Journal of Microwave and Wireless Technologies, available on CJO2013. DOI: DOI:10.1017/S1759078712000839
[24]	Elta M E. The effect of mixed tunneling and avalanche breakdown on microwave transit-time diodes. PhD Dissertation, Electron Physics Laboratory, Univ. of Mich. , Ann Arbor, MI, Tech. Rep, 1978
[25]	Kane E O. Theory of tunneling. J Appl Phys, 1961, 32:83 doi: 10.1063/1.1735965
[26]	Acharyya A, Mukherjee M, Banerjee J P. Influence of tunnel current on DC and dynamic properties of silicon based terahertz IMPATT source. Terahertz Science and Technology, 2011, 4(1):26 doi: 10.1080/00207217.2014.982211?scroll=top&needAccess=true
[27]	Dash G N, Pati S P. A generalized simulation method for IMPATT mode operation and studies on the influence of tunnel current on IMPATT properties. Semicond Sci Technol, 1992, 7:222 doi: 10.1088/0268-1242/7/2/008
[28]	Sze S M, Ryder R M. Microwave avalanche diodes. Proc IEEE, Special Issue on Microwave Semiconductor Devices, 1971, 59(8):1140 https://www.elsevier.com/books/practical-microwave-electron-devices/unknown/978-0-12-374700-6
[29]	Acharyya A, Mukherjee J, Mukherjee M, et al. Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Archives of Physics Research, 2011, 2(1):107 http://airccj.org/CSCP/vol3/csit3237.pdf
[30]	Acharyya A, Pal B, Banerjee J P. Temperature distribution inside semi-infinite heat sinks for IMPATT sources. International Journal of Engineering Science and Technology, 2010, 2(10):5142 http://www.oalib.com/paper/1312864
[31]	Grant W N. Electron and hole ionization rates in epitaxial silicon. Solid-State Electron, 1973, 16(10):1189 doi: 10.1016/0038-1101(73)90147-0
[32]	Canali C, Ottaviani G, Quaranta A A. Drift velocity of electrons and holes and associated anisotropic effects in silicon. J Phys Chem Solids, 1971, 32(8):1707 doi: 10.1016/S0022-3697(71)80137-3
[33]	Zeghbroeck B V. Principles of semiconductor devices. Colorado Press, 2011
[34]	Electronic Archive: New Semiconductor Materials, Characteristics and Properties. http://www.ioffe.ru/SVA/NSM/Semicond/Si/index.html
[35]	Kurokawa K. Some basic characteristics to broadband negative resistance oscillators. Bell Syst Tech J, 1969, 48:1937 doi: 10.1002/bltj.1969.48.issue-6
[36]	Luy J F, Casel A, Behr W, et al. A 90-GHz double-drift IMPATT diode made with Si MBE. IEEE Trans Electron Devices, 1987, 34:1084 doi: 10.1109/T-ED.1987.23049
[37]	Wollitzer M, Buchler J, Schafflr F, et al. D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz. Electron Lett, 1996, 32:122 doi: 10.1049/el:19960088

Fig. 1. One-dimensional model of DDR IMPATT device

DownLoad: Full-Size Img PowerPoint

Fig. 2. One-dimensional model of a reverse biased IMPATT diode (showing the tunneling positions of electrons and holes)^{[26, 27]}

DownLoad: Full-Size Img PowerPoint

Fig. 3. Voltage driven IMPATT diode oscillator and associated circuit

DownLoad: Full-Size Img PowerPoint

Fig. 4. Variations of breakdown voltage, Avalanche voltage and peak electric field with optimum frequency of DDR Si IMPATTs

DownLoad: Full-Size Img PowerPoint

Fig. 5. Admittance characteristics of 94, 140, 220, 300 GHz DDR Si IMPATTs

DownLoad: Full-Size Img PowerPoint

Fig. 6. Admittance characteristics of 0.5 THz DDR Si IMPATT

DownLoad: Full-Size Img PowerPoint

Fig. 7. Variation of RF power output of DDR Si IMPATTs with frequency

DownLoad: Full-Size Img PowerPoint

Table 1. Structural, doping and other parameters of base material Si

Table 2. Static parameters of base material Si

Table 3. Large-signal parameters of base material Si

Table 4. Peak tunneling generation rates ($qG_{\rm Tpeak})$, peak avalanche generation rates ($qG_{\rm Apeak})$ in DDR Si IMPATTs at different mm-wave and THz frequencies for 50% voltage modulation

Table 5. The sensitivity analysis and the effect of tunneling on the large-signal properties of DDR diamond and Si IMPATTs at different mm-wave and THz frequencies by taking 50% voltage modulation

Table 6. RF power outputs and DC to RF conversion efficiencies for different values of $R_{\rm S}$ of DDR Si IMPATTs

[1]	Midford T A, Bernick R L. Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans Microw Theory Tech, 1979, 27:483 doi: 10.1109/TMTT.1979.1129653
[2]	Chang Y, Hellum J M, Paul J A, et al. Millimeter-wave IMPATT sources for communication applications. IEEE MTT-S International Microwave Symposium Digest, 1977:216 http://ieeexplore.ieee.org/document/1124410/
[3]	Gray W W, Kikushima L, Morentc N P, et al. Applying IMPATT power sources to modern microwave systems. IEEE J Solid-State Circuits, 1969, 4:409 doi: 10.1109/JSSC.1969.1050046
[4]	Miswa T. Negative resistance in p-n junctions under avalanche breakdown conditions. IEEE Trans Electron Devices, 1966, 33:137 http://adsabs.harvard.edu/abs/1966ITED...13..143.
[5]	Gilden M, Hines M E. Electronic tuning effects in the read microwave avalanche diode. IEEE Trans Electron Devices, 1966, 13(1):169 http://adsabs.harvard.edu/abs/1966ITED...13E.169G
[6]	Gummel H K, Scharfetter D L. Avalanche region of IMPATT diodes. Bell Syst Tech J, 1966, 45:1797 doi: 10.1002/bltj.1966.45.issue-10
[7]	Roy S K, Sridharan M, Ghosh R, et al. Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer. In:Miller J H, ed. Proceedings of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE Ⅰ), Dublin, Ireland, 1979:266 http://www.oalib.com/paper/3065525
[8]	Roy S K, Banerjee J P, Pati S P. A computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT diodes. Proceedings of 4th Conf on Num Anal of Semiconductor Devices (NASECODE Ⅳ), Dublin:Boole, 1985:494 doi: 10.1007%2FBF00619715.pdf
[9]	Acharyya A, Banerjee S, Banerjee J P. Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. J Electron Devices, 2012, 12:725 doi: 10.1007%2F978-81-322-2012-1_51.pdf
[10]	Acharyya A, Mukherjee M, Banerjee J P. Influence of tunnel current on DC and dynamic properties of silicon based terahertz IMPATT source. Terahertz Science and Technology, 2011, 4:26 doi: 10.1080/00207217.2014.982211?scroll=top&needAccess=true
[11]	Acharyya A, Banerjee S, Banerjee J P. Effect of package parasitics on the millimeter-wave performance of DDR silicon IMPATT device operating at W-band. J Electron Devices, 2012, 13:960 http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.667.5333&rep=rep1&type=pdf
[12]	Acharyya A, Banerjee J P. Design and optimization of pulsed mode silicon based DDR IMPATT diode operating at 0.3 THz. International Journal of Engineering Science and Technology, 2011, 3:332 http://www.oalib.com/paper/2111670
[13]	Gummel H K, Blue J L. A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans Electron Devices, 1967, 14(9):569 doi: 10.1109/T-ED.1967.16005
[14]	Evans W J, Haddad G I. A large-signal analysis of IMPATT diodes. IEEE Trans Electron Devices, 1968, 15(10):708 doi: 10.1109/T-ED.1968.16503
[15]	Scharfetter D L, Gummel H K. Large-signal analysis of a silicon read diode oscillator. IEEE Trans Electron Devices, 1969, 6(1):64 doi: 10.1007/s10825-006-0016-7
[16]	Gupta M S, Lomax R J. A current-excited large-signal analysis of IMPATT devices and its circuit implementations. IEEE Trans Electron Devices, 1973, 20:395 doi: 10.1109/T-ED.1973.17661
[17]	Acharyya A, Banerjee J P. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Applied Nanoscience, 2012, DOI: DOI:10.1007/s13204-012-0172-y
[18]	Acharyya A, Banerjee J P. Potentiality of IMPATT devices as terahertz source:an avalanche response time based approach to determine the upper cut-off frequency limits. IETE Journal of Research, 2013, 59, in press doi: 10.4103/0377-2063.113029
[19]	Acharyya A, Banerjee S, Banerjee J P. Calculation of avalanche response time for determining the high frequency performance limitations of IMPATT devices. J Electron Devices, 2012, 12:756
[20]	Acharyya A, Banerjee J P. Analysis of photo-irradiated double-drift region silicon impact avalanche transit time devices in the millimeter-wave and terahertz regime. Terahertz Science and Technology, 2012, 5:97 doi: 10.1080/00207217.2013.830460?src=recsys
[21]	Acharyya A, Banerjee S, Banerjee J P. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. Journal of Semiconductors, 2013, 34:024001 doi: 10.1088/1674-4926/34/2/024001
[22]	Acharyya A, Banerjee S, Banerjee J P. Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radioengineering, 2012, 21:1218 doi: 10.1007/s10825-013-0470-y
[23]	Acharyya A, Banerjee S, Banerjee J P. A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots. International Journal of Microwave and Wireless Technologies, available on CJO2013. DOI: DOI:10.1017/S1759078712000839
[24]	Elta M E. The effect of mixed tunneling and avalanche breakdown on microwave transit-time diodes. PhD Dissertation, Electron Physics Laboratory, Univ. of Mich. , Ann Arbor, MI, Tech. Rep, 1978
[25]	Kane E O. Theory of tunneling. J Appl Phys, 1961, 32:83 doi: 10.1063/1.1735965
[26]	Acharyya A, Mukherjee M, Banerjee J P. Influence of tunnel current on DC and dynamic properties of silicon based terahertz IMPATT source. Terahertz Science and Technology, 2011, 4(1):26 doi: 10.1080/00207217.2014.982211?scroll=top&needAccess=true
[27]	Dash G N, Pati S P. A generalized simulation method for IMPATT mode operation and studies on the influence of tunnel current on IMPATT properties. Semicond Sci Technol, 1992, 7:222 doi: 10.1088/0268-1242/7/2/008
[28]	Sze S M, Ryder R M. Microwave avalanche diodes. Proc IEEE, Special Issue on Microwave Semiconductor Devices, 1971, 59(8):1140 https://www.elsevier.com/books/practical-microwave-electron-devices/unknown/978-0-12-374700-6
[29]	Acharyya A, Mukherjee J, Mukherjee M, et al. Heat sink design for IMPATT diode sources with different base materials operating at 94 GHz. Archives of Physics Research, 2011, 2(1):107 http://airccj.org/CSCP/vol3/csit3237.pdf
[30]	Acharyya A, Pal B, Banerjee J P. Temperature distribution inside semi-infinite heat sinks for IMPATT sources. International Journal of Engineering Science and Technology, 2010, 2(10):5142 http://www.oalib.com/paper/1312864
[31]	Grant W N. Electron and hole ionization rates in epitaxial silicon. Solid-State Electron, 1973, 16(10):1189 doi: 10.1016/0038-1101(73)90147-0
[32]	Canali C, Ottaviani G, Quaranta A A. Drift velocity of electrons and holes and associated anisotropic effects in silicon. J Phys Chem Solids, 1971, 32(8):1707 doi: 10.1016/S0022-3697(71)80137-3
[33]	Zeghbroeck B V. Principles of semiconductor devices. Colorado Press, 2011
[34]	Electronic Archive: New Semiconductor Materials, Characteristics and Properties. http://www.ioffe.ru/SVA/NSM/Semicond/Si/index.html
[35]	Kurokawa K. Some basic characteristics to broadband negative resistance oscillators. Bell Syst Tech J, 1969, 48:1937 doi: 10.1002/bltj.1969.48.issue-6
[36]	Luy J F, Casel A, Behr W, et al. A 90-GHz double-drift IMPATT diode made with Si MBE. IEEE Trans Electron Devices, 1987, 34:1084 doi: 10.1109/T-ED.1987.23049
[37]	Wollitzer M, Buchler J, Schafflr F, et al. D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz. Electron Lett, 1996, 32:122 doi: 10.1049/el:19960088

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Received: 06 February 2013 Revised: 11 May 2013 Online: Published: 01 October 2013

Article Navigation > Journal of Semiconductors > 2013 > 34(10): 104003

Aritra Acharyya, Jit Chakraborty, Kausik Das, Subir Datta, Pritam De, Suranjana Banerjee, J.P. Banerjee. Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime[J]. Journal of Semiconductors, 2013, 34(10): 104003. doi: 10.1088/1674-4926/34/10/104003 ****A Acharyya, J Chakraborty, K Das, S Datta, P De, S Banerjee, J.P. Banerjee. Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime[J]. J. Semicond., 2013, 34(10): 104003. doi: 10.1088/1674-4926/34/10/104003.

Citation:

A Acharyya, J Chakraborty, K Das, S Datta, P De, S Banerjee, J.P. Banerjee. Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime[J]. J. Semicond., 2013, 34(10): 104003. doi: 10.1088/1674-4926/34/10/104003.

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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

DOI: 10.1088/1674-4926/34/10/104003

1.
Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata 700009, India
2.
Supreme Knowledge Foundation Group of Institutions, Sir J. C. Bose School of Engineering, 1, Khan Road, Mankundu, Hooghly, West Bengal 712139, India
3.
Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly 712121, West Bengal, India

More Information

Corresponding author: Aritra Acharyya, ari_besu@yahoo.co.in
Received Date: 2013-02-06
Revised Date: 2013-05-11
Published Date: 2013-10-01

Abstract

Abstract

The authors have carried out the large-signal characterization of silicon-based double-drift region (DDR) impact avalanche transit time (IMPATT) devices designed to operate up to 0.5 THz using a large-signal simulation method developed by the authors based on non-sinusoidal voltage excitation. The effect of band-to-band tunneling as well as parasitic series resistance on the large-signal properties of DDR Si IMPATTs have also been studied at different mm-wave and THz frequencies. Large-signal simulation results show that DDR Si IMPATT is capable of delivering peak RF power of 633.69 mW with 7.95% conversion efficiency at 94 GHz for 50% voltage modulation, whereas peak RF power output and efficiency fall to 81.08 mW and 2.01% respectively at 0.5 THz for same voltage modulation. The simulation results are compared with the experimental results and are found to be in close agreement.
- band to band tunneling,
- DDR silicon IMPATTs,
- large-signal simulation,
- millimeter-wave,
- series resistance,
- terahertz regime

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References(37)

References

[1]	Midford T A, Bernick R L. Millimeter wave CW IMPATT diodes and oscillators. IEEE Trans Microw Theory Tech, 1979, 27:483 doi: 10.1109/TMTT.1979.1129653
[2]	Chang Y, Hellum J M, Paul J A, et al. Millimeter-wave IMPATT sources for communication applications. IEEE MTT-S International Microwave Symposium Digest, 1977:216 http://ieeexplore.ieee.org/document/1124410/
[3]	Gray W W, Kikushima L, Morentc N P, et al. Applying IMPATT power sources to modern microwave systems. IEEE J Solid-State Circuits, 1969, 4:409 doi: 10.1109/JSSC.1969.1050046
[4]	Miswa T. Negative resistance in p-n junctions under avalanche breakdown conditions. IEEE Trans Electron Devices, 1966, 33:137 http://adsabs.harvard.edu/abs/1966ITED...13..143.
[5]	Gilden M, Hines M E. Electronic tuning effects in the read microwave avalanche diode. IEEE Trans Electron Devices, 1966, 13(1):169 http://adsabs.harvard.edu/abs/1966ITED...13E.169G
[6]	Gummel H K, Scharfetter D L. Avalanche region of IMPATT diodes. Bell Syst Tech J, 1966, 45:1797 doi: 10.1002/bltj.1966.45.issue-10
[7]	Roy S K, Sridharan M, Ghosh R, et al. Computer method for the dc field and carrier current profiles in the IMPATT device starting from the field extremum in the depletion layer. In:Miller J H, ed. Proceedings of the 1st Conference on Numerical Analysis of Semiconductor Devices (NASECODE Ⅰ), Dublin, Ireland, 1979:266 http://www.oalib.com/paper/3065525
[8]	Roy S K, Banerjee J P, Pati S P. A computer analysis of the distribution of high frequency negative resistance in the depletion layer of IMPATT diodes. Proceedings of 4th Conf on Num Anal of Semiconductor Devices (NASECODE Ⅳ), Dublin:Boole, 1985:494 doi: 10.1007%2FBF00619715.pdf
[9]	Acharyya A, Banerjee S, Banerjee J P. Dependence of DC and small-signal properties of double drift region silicon IMPATT device on junction temperature. J Electron Devices, 2012, 12:725 doi: 10.1007%2F978-81-322-2012-1_51.pdf
[10]	Acharyya A, Mukherjee M, Banerjee J P. Influence of tunnel current on DC and dynamic properties of silicon based terahertz IMPATT source. Terahertz Science and Technology, 2011, 4:26 doi: 10.1080/00207217.2014.982211?scroll=top&needAccess=true
[11]	Acharyya A, Banerjee S, Banerjee J P. Effect of package parasitics on the millimeter-wave performance of DDR silicon IMPATT device operating at W-band. J Electron Devices, 2012, 13:960 http://citeseerx.ist.psu.edu/viewdoc/download?doi=10.1.1.667.5333&rep=rep1&type=pdf
[12]	Acharyya A, Banerjee J P. Design and optimization of pulsed mode silicon based DDR IMPATT diode operating at 0.3 THz. International Journal of Engineering Science and Technology, 2011, 3:332 http://www.oalib.com/paper/2111670
[13]	Gummel H K, Blue J L. A small-signal theory of avalanche noise in IMPATT diodes. IEEE Trans Electron Devices, 1967, 14(9):569 doi: 10.1109/T-ED.1967.16005
[14]	Evans W J, Haddad G I. A large-signal analysis of IMPATT diodes. IEEE Trans Electron Devices, 1968, 15(10):708 doi: 10.1109/T-ED.1968.16503
[15]	Scharfetter D L, Gummel H K. Large-signal analysis of a silicon read diode oscillator. IEEE Trans Electron Devices, 1969, 6(1):64 doi: 10.1007/s10825-006-0016-7
[16]	Gupta M S, Lomax R J. A current-excited large-signal analysis of IMPATT devices and its circuit implementations. IEEE Trans Electron Devices, 1973, 20:395 doi: 10.1109/T-ED.1973.17661
[17]	Acharyya A, Banerjee J P. Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources. Applied Nanoscience, 2012, DOI: DOI:10.1007/s13204-012-0172-y
[18]	Acharyya A, Banerjee J P. Potentiality of IMPATT devices as terahertz source:an avalanche response time based approach to determine the upper cut-off frequency limits. IETE Journal of Research, 2013, 59, in press doi: 10.4103/0377-2063.113029
[19]	Acharyya A, Banerjee S, Banerjee J P. Calculation of avalanche response time for determining the high frequency performance limitations of IMPATT devices. J Electron Devices, 2012, 12:756
[20]	Acharyya A, Banerjee J P. Analysis of photo-irradiated double-drift region silicon impact avalanche transit time devices in the millimeter-wave and terahertz regime. Terahertz Science and Technology, 2012, 5:97 doi: 10.1080/00207217.2013.830460?src=recsys
[21]	Acharyya A, Banerjee S, Banerjee J P. Effect of junction temperature on the large-signal properties of a 94 GHz silicon based double-drift region impact avalanche transit time device. Journal of Semiconductors, 2013, 34:024001 doi: 10.1088/1674-4926/34/2/024001
[22]	Acharyya A, Banerjee S, Banerjee J P. Large-signal simulation of 94 GHz pulsed DDR silicon IMPATTs including the temperature transient effect. Radioengineering, 2012, 21:1218 doi: 10.1007/s10825-013-0470-y
[23]	Acharyya A, Banerjee S, Banerjee J P. A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots. International Journal of Microwave and Wireless Technologies, available on CJO2013. DOI: DOI:10.1017/S1759078712000839
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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

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Large-signal characterization of DDR silicon IMPATTs operating in millimeter-wave and terahertz regime

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