J. Semicond. > 2013, Volume 34 > Issue 10 > 104006
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SEMICONDUCTOR DEVICES

A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

Pan Dai1, 3, Shulong Lu1, , Lian Ji1, Wei He1, Lifeng Bian1, Hui Yang1, M. Arimochi2, H. Yoshida2, S. Uchida2 and M. Ikeda2

+ Author Affiliations

 Corresponding author: Lu Shulong, sllu2008@sinano.ac.cn

DOI: 10.1088/1674-4926/34/10/104006

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Abstract: We report the recent result of GaAs/GaInP dual-junction solar cells grown by all solid-state molecular-beam-epitaxy (MBE). The device structure consists of a GaIn0.48P homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GaInP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-Ⅴ compound semiconductor solar cell is very promising for achieving high energy conversion efficiency.

Key words: molecular beam epitaxy, Ⅲ-Ⅴ semiconductor PN junction, solar cell



[1]
Bertness K A, Kurtz S R, Friedman D J, et al. 29.5%-efficient GaInP/GaAs tandem solar cells. Appl Phys Lett, 1994, 65:989 doi: 10.1063/1.112171
[2]
Takamoto T, Ikeda E, Kurita H, et al. Over 30% efficient InGaP/GaAs tandem solar cells. Appl Phys Lett, 1997, 70:331
[3]
Garcia I, Rey-Stolle I, Galiana B, et al. A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns. Appl Phys Lett, 2009, 94:053509 doi: 10.1063/1.3078817
[4]
King R R, Law D C, Edmondson K M, et al. 40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells. Appl Phys Lett, 2007, 90:183516 doi: 10.1063/1.2734507
[5]
Kurtz S R, Olson J M, Kibbler A. Modeling of tow-junction, series-connected tandem solar cells using top cell thickness as an adjustable parameter. J Appl Phys, 1990, 68:1890 doi: 10.1063/1.347177
[6]
Ragay F W, Leys M R, Nouwens P A M, et al. A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact. IEEE Electron Device Lett, 1992, 13:618 doi: 10.1109/55.192863
[7]
Chuang H L, Klausmeier-Brown M E, Melloch M R, et al. Effective minority-carrier hole confinement of Si-doped, n+-n GaAs homojunction barriers. J Appl Phys, 1989, 66:273 doi: 10.1063/1.343868
[8]
Tobin S P, Vernon C B, Wojtczuk S J, et al. Assessment of MOCVD-and MBE-grown GaAs for high-efficiency solar cell applications. IEEE Trans Electron Devices, 1990, 37:469 doi: 10.1109/16.46385
[9]
Leinonan P, Pessa M, Haapamaa J, et al. Advances in production MBE grown GaInP/GaAs cascade solar cells. IEEE Xplore-Photovoltaic Specialists Conference, 2000, DOI10.1109/PVSC.2000.916098
[10]
Wicks G W, Koch M W, Varriano J A, et al. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy. Appl Phys Lett, 1991, 59:342 doi: 10.1063/1.105590
[11]
Yoon S F, Mah K W, Zheng H Q. Effects of ⅤⅢ ratio on the properties of InGaP grown by a valved phosphorous cracker cell in solid source MBE. Jpn J Appl Phys, 1999, 38:5740 doi: 10.1143/JJAP.38.5740
[12]
Lu S L, Ji L, He W, et al. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy. Nanoscale Res Lett, 2011, 6:576 doi: 10.1186/1556-276X-6-576
[13]
He W, Lu S L, Dong J R, et al. Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapour deposition. Appl Phys Lett, 2010, 97:121909 doi: 10.1063/1.3492854
[14]
Bauhuis G J, Mulder P, Haverkamp E J, et al. 26.1% thin-film GaAs solar cell using epitaxial lift-off. Solar Energy Materials and Solar Cells, 2009, 93:1488 doi: 10.1016/j.solmat.2009.03.027
Fig. 1.  Scanning electronic microscopy image of a GaAs/GaInP on solar cell.

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Fig. 2.  The current–voltage (I–V) characteristics of GaAs, GaInP and GaAs/GaInP solar cells

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Fig. 3.  External quantum efficiency (EQE) of the dual-junction solar cell.

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Fig. 4.  The current–voltage (I–V) characteristics of the GaAs tunnel junction

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Fig. 5.  The SIMS profiles of the device structures near the GaInP top cell.

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[1]
Bertness K A, Kurtz S R, Friedman D J, et al. 29.5%-efficient GaInP/GaAs tandem solar cells. Appl Phys Lett, 1994, 65:989 doi: 10.1063/1.112171
[2]
Takamoto T, Ikeda E, Kurita H, et al. Over 30% efficient InGaP/GaAs tandem solar cells. Appl Phys Lett, 1997, 70:331
[3]
Garcia I, Rey-Stolle I, Galiana B, et al. A 32.6% efficient lattice-matched dual-junction solar cell working at 1000 suns. Appl Phys Lett, 2009, 94:053509 doi: 10.1063/1.3078817
[4]
King R R, Law D C, Edmondson K M, et al. 40% efficient metamorphic GaInP/InGaAs/Ge multijunction solar cells. Appl Phys Lett, 2007, 90:183516 doi: 10.1063/1.2734507
[5]
Kurtz S R, Olson J M, Kibbler A. Modeling of tow-junction, series-connected tandem solar cells using top cell thickness as an adjustable parameter. J Appl Phys, 1990, 68:1890 doi: 10.1063/1.347177
[6]
Ragay F W, Leys M R, Nouwens P A M, et al. A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact. IEEE Electron Device Lett, 1992, 13:618 doi: 10.1109/55.192863
[7]
Chuang H L, Klausmeier-Brown M E, Melloch M R, et al. Effective minority-carrier hole confinement of Si-doped, n+-n GaAs homojunction barriers. J Appl Phys, 1989, 66:273 doi: 10.1063/1.343868
[8]
Tobin S P, Vernon C B, Wojtczuk S J, et al. Assessment of MOCVD-and MBE-grown GaAs for high-efficiency solar cell applications. IEEE Trans Electron Devices, 1990, 37:469 doi: 10.1109/16.46385
[9]
Leinonan P, Pessa M, Haapamaa J, et al. Advances in production MBE grown GaInP/GaAs cascade solar cells. IEEE Xplore-Photovoltaic Specialists Conference, 2000, DOI10.1109/PVSC.2000.916098
[10]
Wicks G W, Koch M W, Varriano J A, et al. Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy. Appl Phys Lett, 1991, 59:342 doi: 10.1063/1.105590
[11]
Yoon S F, Mah K W, Zheng H Q. Effects of ⅤⅢ ratio on the properties of InGaP grown by a valved phosphorous cracker cell in solid source MBE. Jpn J Appl Phys, 1999, 38:5740 doi: 10.1143/JJAP.38.5740
[12]
Lu S L, Ji L, He W, et al. High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy. Nanoscale Res Lett, 2011, 6:576 doi: 10.1186/1556-276X-6-576
[13]
He W, Lu S L, Dong J R, et al. Structural and optical properties of GaInP grown on germanium by metal-organic chemical vapour deposition. Appl Phys Lett, 2010, 97:121909 doi: 10.1063/1.3492854
[14]
Bauhuis G J, Mulder P, Haverkamp E J, et al. 26.1% thin-film GaAs solar cell using epitaxial lift-off. Solar Energy Materials and Solar Cells, 2009, 93:1488 doi: 10.1016/j.solmat.2009.03.027

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    Received: 01 March 2013 Revised: 19 March 2013 Online: Published: 01 October 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(10): 104006
      Pan Dai, Shulong Lu, Lian Ji, Wei He, Lifeng Bian, Hui Yang, M. Arimochi, H. Yoshida, S. Uchida, M. Ikeda. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2013, 34(10): 104006. doi: 10.1088/1674-4926/34/10/104006 ****P Dai, S L Lu, L Ji, W He, L F Bian, H Yang, M. Arimochi, H. Yoshida, S. Uchida, M. Ikeda. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy[J]. J. Semicond., 2013, 34(10): 104006. doi: 10.1088/1674-4926/34/10/104006.
      Citation:
      Pan Dai, Shulong Lu, Lian Ji, Wei He, Lifeng Bian, Hui Yang, M. Arimochi, H. Yoshida, S. Uchida, M. Ikeda. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2013, 34(10): 104006. doi: 10.1088/1674-4926/34/10/104006 ****
      P Dai, S L Lu, L Ji, W He, L F Bian, H Yang, M. Arimochi, H. Yoshida, S. Uchida, M. Ikeda. A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy[J]. J. Semicond., 2013, 34(10): 104006. doi: 10.1088/1674-4926/34/10/104006.
      shu

      A GaAs/GaInP dual junction solar cell grown by molecular beam epitaxy

      DOI: 10.1088/1674-4926/34/10/104006
      • 1.

        Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

      • 2.

        Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa, 243-0014, Japan

      • 3.

        University of Chinese Academy of Sciences, Beijing 100049, China

      Funds:

      the SINANO-SONY Joint Program, China Y1AAQ11002

      the National Natural Science Foundation of China 61176128

      Project supported by the National Natural Science Foundation of China (No. 61176128) and the SINANO-SONY Joint Program, China (No. Y1AAQ11002)

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      • Corresponding author: Lu Shulong, sllu2008@sinano.ac.cn
      • Received Date: 2013-03-01
      • Revised Date: 2013-03-19
      • Published Date: 2013-10-01

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