Fig. 1.
Typical CMOS SPAD structure.
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Qiuyang He, Yue Xu, Feifei Zhao. An accurate simulation model for single-photon avalanche diodes including important statistical effects[J]. Journal of Semiconductors, 2013, 34(10): 104007. doi: 10.1088/1674-4926/34/10/104007
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Q Y He, Y Xu, F F Zhao. An accurate simulation model for single-photon avalanche diodes including important statistical effects[J]. J. Semicond., 2013, 34(10): 104007. doi: 10.1088/1674-4926/34/10/104007.
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An accurate simulation model for single-photon avalanche diodes including important statistical effects
DOI: 10.1088/1674-4926/34/10/104007
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Abstract
An accurate and complete circuit simulation model for single-photon avalanche diodes (SPADs) is presented. The derived model is not only able to simulate the static DC and dynamic AC behaviors of an SPAD operating in Geiger-mode, but also can emulate the second breakdown and the forward bias behaviors. In particular, it considers important statistical effects, such as dark-counting and after-pulsing phenomena. The developed model is implemented using the Verilog-A description language and can be directly performed in commercial simulators such as Cadence Spectre. The Spectre simulation results give a very good agreement with the experimental results reported in the open literature. This model shows a high simulation accuracy and very fast simulation rate. -
References
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