Fig. 1.
Structure of a dual-band LNA.
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| Citation: |
Zhiyi Lu, Hongyun Xie, Wenjuan Huo, Wanrong Zhang. 0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA[J]. Journal of Semiconductors, 2013, 34(2): 025002. doi: 10.1088/1674-4926/34/2/025002
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Z Y Lu, H Y Xie, W J Huo, W R Zhang. 0.9 GHz and 2.4 GHz dual-band SiGe HBT LNA[J]. J. Semicond., 2013, 34(2): 025002. doi: 10.1088/1674-4926/34/2/025002.
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Abstract
This paper presents design and implementation of a dual-band LNA using a 0.35 μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications. PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic (EM) simulation. Design considerations of noise decoupling, input/output impedance matching, and current reuse are described in detail. At 0.9/2.4 GHz, gain and noise figure are 13/16 dB and 4.2/3.9 dB, respectively. Both S11 and S22 are below-10 dB. Power dissipation is 40 mW at 3.5 V supply.-
Keywords:
- current reuse,
- dual-band,
- emitter inductor,
- EM simulation,
- SiGe HBT
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References
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