J. Semicond. > 2013, Volume 34 > Issue 6 > 064006
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SEMICONDUCTOR DEVICES

An analytical model of the electric field distributions of buried superjunction devices

Haimeng Huang and Xingbi Chen

+ Author Affiliations

 Corresponding author: Huang Haimeng, Email:haimenghuang@126.com

DOI: 10.1088/1674-4926/34/6/064006

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Abstract: An analytical model of the electric field distributions of buried superjunction structures, based on the charge superposition method and Green's function approach, is derived. An accurate approximation of the exact analytical model of the vertical electric field is also proposed and demonstrated by numerical simulation. The influence of the dimension and doping concentration of each layer on the electric field is discussed in detail, and the breakdown voltage is demonstrated by simulations.

Key words: analytical model, superjunction devices, electric field distributions, breakdown voltage



[1]
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[2]
Chen X B. Semiconductor power devices with alternating conductivity type high voltage breakdown regions. USA Patent, No. 5216275, 1993
[3]
Chen X B. Theory of a novel voltage-sustaining composite buffer (CB) layer for power devices. Chinese Journal of Electronics, 1998, 7(3):211
[4]
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Ono S, Saito W, Takashita M, et al. Design concept of n-buffer layer (n-bottom assist layer) for 600 V-class semi-super junction MOSFET. Proc ISPSD, 2007:25
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[9]
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[10]
Synopsys, Taurus Medici User Guide, 2010
Fig. 1.  Cross-sectional structure of a buried SJ device. $W_{1}$ and $W_{2}$ are the column positions, and $W$ is the thickness of the drift region.

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Fig. 2.  The superposition of the buried SJ structure. The buried SJ structure can be treated as a superposition of a P$^{+}$IN$^{+}$ diode under reverse voltage $V_{\rm R}$ (structure 0), a zero-biased P$^{+}$N$^-$IN$^-$N$^{+}$ diode (structure 1), and a zero-biased buried SJ structure with zero-doping TAL and BAL (structure 2).

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Fig. 3.  (a) The simulated buried SJ structure ($V_{\rm R}$ $=$ 600 V). (b) The vertical electric fields along $x$ $=$ 0 and $x$ $=$ $b$; a comparison of the numerical simulation and analytical model.

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Fig. 4.  Comparisons of the analytical and numerical results of the electric field $E_{y}$(0, $y)$ of a buried SJ device. (a) With different buried layer concentrations. (b) With different buried layer thicknesses. (c) With different concentrations of TAL and BAL.

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Fig. 5.  (a) The relationship of breakdown voltage versus $W_{2}$ when $W_{1}$ $=$ 0 $\mu$m. (b) The relationship of breakdown voltage versus $W_{1}$ when $W_{2}$ $=$ 40 $\mu $m.

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[1]
Coe D J. High voltage semiconductor device. USA Patent, No. 4754310, 1988
[2]
Chen X B. Semiconductor power devices with alternating conductivity type high voltage breakdown regions. USA Patent, No. 5216275, 1993
[3]
Chen X B. Theory of a novel voltage-sustaining composite buffer (CB) layer for power devices. Chinese Journal of Electronics, 1998, 7(3):211
[4]
Lorenz L, Deboy G, Knapp A, et al. COOLMOSTM—a new milestone in high voltage power MOS. Proc ISPSD, 1999:3 http://ieeexplore.ieee.org/document/764028/?reload=true&arnumber=764028&filter%3DAND(p_IS_Number:16497)
[5]
Saito W, Omura I, Aida S, et al. 600 V semi-superjunction MOSFET. Proc ISPSD, 2003:45
[6]
Saito W, Omura I, Aida S, et al. Semisuperjunction MOSFETs:new design concept for lower on-resistance and softer reverse-recovery body diode. IEEE Trans Electron Devices, 2003, 50(8):1801 doi: 10.1109/TED.2003.815126
[7]
Ono S, Saito W, Takashita M, et al. Design concept of n-buffer layer (n-bottom assist layer) for 600 V-class semi-super junction MOSFET. Proc ISPSD, 2007:25
[8]
Napoli E, Wang H, Udrea F. The effect of charge imbalance on superjunction power devices:an exact analytical solution. IEEE Electron Device Lett, 2008, 29(3):249 doi: 10.1109/LED.2007.915375
[9]
Wang H, Napoli E, Udrea F. Breakdown voltage for superjunction power devices with charge imbalance:an analytical model valid for both punch through and non punch through devices. IEEE Trans Electron Devices, 2009, 56(12):3175 doi: 10.1109/TED.2009.2032595
[10]
Synopsys, Taurus Medici User Guide, 2010

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    Received: 17 November 2012 Revised: 19 December 2012 Online: Published: 01 June 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(6): 064006
      Haimeng Huang, Xingbi Chen. An analytical model of the electric field distributions of buried superjunction devices[J]. Journal of Semiconductors, 2013, 34(6): 064006. doi: 10.1088/1674-4926/34/6/064006 ****H M Huang, X B Chen. An analytical model of the electric field distributions of buried superjunction devices[J]. J. Semicond., 2013, 34(6): 064006. doi: 10.1088/1674-4926/34/6/064006.
      Citation:
      Haimeng Huang, Xingbi Chen. An analytical model of the electric field distributions of buried superjunction devices[J]. Journal of Semiconductors, 2013, 34(6): 064006. doi: 10.1088/1674-4926/34/6/064006 ****
      H M Huang, X B Chen. An analytical model of the electric field distributions of buried superjunction devices[J]. J. Semicond., 2013, 34(6): 064006. doi: 10.1088/1674-4926/34/6/064006.
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      An analytical model of the electric field distributions of buried superjunction devices

      DOI: 10.1088/1674-4926/34/6/064006

      • State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

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      • Corresponding author: Huang Haimeng, Email:haimenghuang@126.com
      • Received Date: 2012-11-17
      • Revised Date: 2012-12-19
      • Published Date: 2013-06-01

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