J. Semicond. > 2013, Volume 34 > Issue 6 > 065001
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SEMICONDUCTOR INTEGRATED CIRCUITS

A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

Jie Cui1, 2, , Lei Chen1, Chunlei Kang1, Jia Shi1, Xuguang Zhang1, Baoli Ai1 and Yi Liu1

+ Author Affiliations

 Corresponding author: Cui Jie, Email:cuij@sari.ac.cn

DOI: 10.1088/1674-4926/34/6/065001

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Abstract: A three-stage 4.8-6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a 31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal.

Key words: error vector magnitude (EVM), high power amplifier (HPA), high linearity, InGaP/GaAs HBT, wideband



[1]
Kidwai A A, Nazimov A, Eilat Y, et al. Fully integrated 23 dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45 nm CMOS process. Proc RFIC, 2009:273 doi: 10.1007/s10470-012-9873-0
[2]
Kim J, Kim W, Kornegay K T, et al. A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer. IEEE J Solid-State Circuits, 2012, 47(3):599 doi: 10.1109/JSSC.2011.2180977
[3]
Li Wenyuan, Zhang Qian. A novel broadband power amplifier in SiGe HBT technology. Journal of Semiconductors, 2013, 34(1):015001 doi: 10.1088/1674-4926/34/1/015001
[4]
Pingue M, Orobello B, Diciomma R, et al. 1-6 GHz 4 W MMIC GaAs high power amplifier. Microw Opt Technol Lett, 2012, 54(12):2747 doi: 10.1002/mop.v54.12
[5]
Lin C C, Hsu Y C. Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT. Proc Microwave Conference, 2005 http://amsacta.unibo.it/1217/1/GA051453.PDF
[6]
Crips S C. RF power amplifier for wireless communications. 2nd ed. Artech House, 2006 http://www.wiley.com/WileyCDA/WileyTitle/productCd-1118844300.html
[7]
Galal S, Razavi B. 40-Gb/s amplifier and ESD protection circuit in 0.18-μm CMOS technology. IEEE J Solid-State Circuits, 2012, 39(12):2389 https://www.coursehero.com/file/p5one4s/Galal-and-B-Razavi-Broadband-ESD-protection-circuits-in-CMOS-technology-IEEE-J/
Fig. 1.  A graphical illustration of the load-pull set up and procedure.

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Fig. 2.  (a) GSG structure for load-pull test. (b) Load-pull curve and result.

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Fig. 3.  Circuit diagram of the linear bias.

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Fig. 4.  $R_{5}$ dependence of the gain compression (simulated).

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Fig. 5.  (a) Triple-resonance amplifier. (b) Behavior of a triple-resonance circuit.

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Fig. 6.  (a) Circuit diagram of the proposed PA. (b) Die photograph of the chip.

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Fig. 7.  (a) Inductor testing GSG structure. (b) EM simulation result. (c) Tested inductance and $Q$ factor.

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Fig. 8.  Photograph of test bench of the amplifier.

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Fig. 9.  Input and output return loss.

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Fig. 10.  Output power, gain and PAE at 5.5 GHz.

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Fig. 11.  EVM value versus different 5 GHz band.

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Table 1.   GaAs HBT performance.

Table 2.   Performance comparison.
[1]
Kidwai A A, Nazimov A, Eilat Y, et al. Fully integrated 23 dBm transmit chain with on-chip power amplifier and balun for 802.11a application in standard 45 nm CMOS process. Proc RFIC, 2009:273 doi: 10.1007/s10470-012-9873-0
[2]
Kim J, Kim W, Kornegay K T, et al. A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer. IEEE J Solid-State Circuits, 2012, 47(3):599 doi: 10.1109/JSSC.2011.2180977
[3]
Li Wenyuan, Zhang Qian. A novel broadband power amplifier in SiGe HBT technology. Journal of Semiconductors, 2013, 34(1):015001 doi: 10.1088/1674-4926/34/1/015001
[4]
Pingue M, Orobello B, Diciomma R, et al. 1-6 GHz 4 W MMIC GaAs high power amplifier. Microw Opt Technol Lett, 2012, 54(12):2747 doi: 10.1002/mop.v54.12
[5]
Lin C C, Hsu Y C. Single-chip dual-band WLAN power amplifier using InGaP/GaAs HBT. Proc Microwave Conference, 2005 http://amsacta.unibo.it/1217/1/GA051453.PDF
[6]
Crips S C. RF power amplifier for wireless communications. 2nd ed. Artech House, 2006 http://www.wiley.com/WileyCDA/WileyTitle/productCd-1118844300.html
[7]
Galal S, Razavi B. 40-Gb/s amplifier and ESD protection circuit in 0.18-μm CMOS technology. IEEE J Solid-State Circuits, 2012, 39(12):2389 https://www.coursehero.com/file/p5one4s/Galal-and-B-Razavi-Broadband-ESD-protection-circuits-in-CMOS-technology-IEEE-J/

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    Received: 26 November 2012 Revised: 19 December 2012 Online: Published: 01 June 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(6): 065001
      Jie Cui, Lei Chen, Chunlei Kang, Jia Shi, Xuguang Zhang, Baoli Ai, Yi Liu. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. Journal of Semiconductors, 2013, 34(6): 065001. doi: 10.1088/1674-4926/34/6/065001 ****J Cui, L Chen, C L Kang, J Shi, X G Zhang, B L Ai, Y Liu. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. J. Semicond., 2013, 34(6): 065001. doi: 10.1088/1674-4926/34/6/065001.
      Citation:
      Jie Cui, Lei Chen, Chunlei Kang, Jia Shi, Xuguang Zhang, Baoli Ai, Yi Liu. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. Journal of Semiconductors, 2013, 34(6): 065001. doi: 10.1088/1674-4926/34/6/065001 ****
      J Cui, L Chen, C L Kang, J Shi, X G Zhang, B L Ai, Y Liu. A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n[J]. J. Semicond., 2013, 34(6): 065001. doi: 10.1088/1674-4926/34/6/065001.
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      A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

      DOI: 10.1088/1674-4926/34/6/065001
      • 1.

        Micro-Nano Device Research Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China

      • 2.

        Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

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      • Corresponding author: Cui Jie, Email:cuij@sari.ac.cn
      • Received Date: 2012-11-26
      • Revised Date: 2012-12-19
      • Published Date: 2013-06-01

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