Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

Xiao Jin; Hong Zhang; Rongxiu Zhou; Zhao Jin

doi:10.1088/1674-4926/34/7/072004

J. Semicond. > 2013, Volume 34 > Issue 7 > 072004

SEMICONDUCTOR PHYSICS

Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

Xiao Jin^1,, Hong Zhang¹, Rongxiu Zhou¹ and Zhao Jin²

+ Author Affiliations

Corresponding author: Jin Xiao, Email:jinxiao0535@126.com

DOI: 10.1088/1674-4926/34/7/072004

Abstract: We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas (2DEG) at a single heterointerface (triangle-shaped quantum well). Our results indicate that, like the interface roughness scattering in a square quantum well, the roughness scattering at the Al_xGa_1-xAs/GaAs heterointerface can be characterized by parameters of roughness height Δ and lateral Λ, and in addition by electric field F. A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.

Key words: mobility, AlGaAs/GaAs, interface roughness scattering

References

[1]	Dutta G, Basu S. Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect. Journal of Semiconductors, 2012, 33(5):054002 doi: 10.1088/1674-4926/33/5/054002
[2]	Gold A. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. Phys Rev B, 1987, 35:723 doi: 10.1103/PhysRevB.35.723
[3]	Sakaki H, Noda T, Hirakawa K, et al. Interface roughness scattering in GaAs/AlAs quantum wells. Appl Phys Lett, 1987, 51:1934 doi: 10.1063/1.98305
[4]	Joshi R P. Simulations for the high-speed response of GaN metal-semiconductor-metal photodetectors. Appl Phys Lett, 1994, 64:223 doi: 10.1063/1.111511
[5]	Mou C Y, Hong T M. Transport in quantum wells in the presence of interface roughness. Phys Rev B, 2000, 61:12612 doi: 10.1103/PhysRevB.61.12612
[6]	Li Ran, Huang Hui, Ren Xiaomin, et al. Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition. Journal of Semiconductors, 2011, 32(5):053003 doi: 10.1088/1674-4926/32/5/053003
[7]	Gold A, Marty R. Interface-roughness scattering and magnetoresistance in thin AlP (100) quantum well structures. Phys E, 2007, 40:2028
[8]	Ando T, Fowler A B, Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys, 1982, 54:437 doi: 10.1103/RevModPhys.54.437
[9]	Prange R E, Nee T W. Quantum spectroscopy of the low-field oscillations in the surface impedance. Phys Rev, 1968, 168:779 doi: 10.1103/PhysRev.168.779
[10]	Prange R E. Electron-Rayleigh-wave interaction. Phys Rev, 1969, 187:805
[11]	Gurusinghe M N, Davidsson S K, Andersson T G. Two-dimensional electron mobility limitation mechanisms in Al_xGa_1-xN/GaN heterostructures. Phys Rev B, 2005, 72:045316 doi: 10.1103/PhysRevB.72.045316

Fig. 1. Schematic diagrams of the approximation for (a) the infinite triangle-shaped confined potential, and (b) the square quantum well

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Fig. 2. Dependence of mobility μ on lateral roughness size $\Lambda$ at various 2DEG density $N_{\rm s}$ with the same roughness height $\Delta$ = 2.83Å and electric field $F=$ 100 kV/cm in an AlGaAs/GaAs single heterointerface at low temperature

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Fig. 3. Dependence of mobility on 2DEG Ns using different lateral sizes of roughness $\Lambda$ = 3 nm, 5 nm, 7 nm, respectively. The same parameters $\Delta$ = 2.83Å and $F=$ 100 kV/cm were used for all calculated curves

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Fig. 4. Dependence of mobility on various electric field for the triangle well at different 2DEG densities of $N_{\rm s}$ = 1 × 10$^{11}$, 4 × 10$^{11}$, 1.6 × 10$^{12}$ cm$^{-2}$, respectively. The same parameters $\Delta$ = 2.83 Å and $\Lambda$ = 5 nm were used for all calculated curves

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Fig. 5. Comparison of the 2DEG mobility between the present triangle-shaped well and conventional square well with the same energy of the ground states $E_{0}$ (= 90 meV). For the two types of the wells, the same parameters $\Delta$ = 2.83 Å and $\Lambda$ = 5 nm were used for calculation

DownLoad: Full-Size Img PowerPoint

[1]	Dutta G, Basu S. Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect. Journal of Semiconductors, 2012, 33(5):054002 doi: 10.1088/1674-4926/33/5/054002
[2]	Gold A. Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature. Phys Rev B, 1987, 35:723 doi: 10.1103/PhysRevB.35.723
[3]	Sakaki H, Noda T, Hirakawa K, et al. Interface roughness scattering in GaAs/AlAs quantum wells. Appl Phys Lett, 1987, 51:1934 doi: 10.1063/1.98305
[4]	Joshi R P. Simulations for the high-speed response of GaN metal-semiconductor-metal photodetectors. Appl Phys Lett, 1994, 64:223 doi: 10.1063/1.111511
[5]	Mou C Y, Hong T M. Transport in quantum wells in the presence of interface roughness. Phys Rev B, 2000, 61:12612 doi: 10.1103/PhysRevB.61.12612
[6]	Li Ran, Huang Hui, Ren Xiaomin, et al. Growth of pure zinc blende p-type GaAs nanowires by metal-organic chemical vapor deposition. Journal of Semiconductors, 2011, 32(5):053003 doi: 10.1088/1674-4926/32/5/053003
[7]	Gold A, Marty R. Interface-roughness scattering and magnetoresistance in thin AlP (100) quantum well structures. Phys E, 2007, 40:2028
[8]	Ando T, Fowler A B, Stern F. Electronic properties of two-dimensional systems. Rev Mod Phys, 1982, 54:437 doi: 10.1103/RevModPhys.54.437
[9]	Prange R E, Nee T W. Quantum spectroscopy of the low-field oscillations in the surface impedance. Phys Rev, 1968, 168:779 doi: 10.1103/PhysRev.168.779
[10]	Prange R E. Electron-Rayleigh-wave interaction. Phys Rev, 1969, 187:805
[11]	Gurusinghe M N, Davidsson S K, Andersson T G. Two-dimensional electron mobility limitation mechanisms in Al_xGa_1-xN/GaN heterostructures. Phys Rev B, 2005, 72:045316 doi: 10.1103/PhysRevB.72.045316

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Received: 09 March 2013 Revised: 24 April 2013 Online: Published: 01 July 2013

We have theoretically studied the mobility limited by interface roughness scattering on two-dimensional electrons gas (2DEG) at a single heterointerface (triangle-shaped quantum well). Our results indicate that, like the interface roughness scattering in a square quantum well, the roughness scattering at the Al_xGa_1-xAs/GaAs heterointerface can be characterized by parameters of roughness height Δ and lateral Λ, and in addition by electric field F. A comparison of two mobilities limited by the interface roughness scattering between the present result and a square well in the same condition is given.

Interface roughness scattering in an AlGaAs/GaAs triangle quantum well and square quantum well

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