J. Semicond. > 2013, Volume 34 > Issue 9 > 094004
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SEMICONDUCTOR DEVICES

The total ionizing dose effects of non-planar triple-gate transistors

Shiyao Liu1, , Wei He1, Jianmin Cao1 and Siwen Huang1

+ Author Affiliations

 Corresponding author: Liu Shiyao, Email:lewis_yao@163.com

DOI: 10.1088/1674-4926/34/9/094004

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Abstract: This paper investigates the total ionizing dose response of different non-planar triple-gate transistor structures with different fin widths. By exposing the pseudo-MOS transistor to different amounts of radiation, different interface trap densities and trapped-oxide charges can be obtained. Using these parameters together with Altal 3D simulation software, the total dose radiation response of various non-planar triple-gate devices can be simulated. The behaviors of three kinds of non-planar devices are compared.

Key words: silicon-on-insulator, total ionizing dose effects, pseudo-MOS, non-planar triple-gate transistors



[1]
Rashkeev S N, Cirba C R, Fleetwood D M, et al. Physical model for enhanced interface-trap formation at low dose rates. IEEE Trans Nucl Sci, 2002, 49(6):26505 http://ieeexplore.ieee.org/document/1134199/authors
[2]
Chen X J, Barnaby H J, Vermeire B, et al. Mechanisms of enhanced radiation induced degradation due to excess molecular hydrogen in bipolar oxides. IEEE Trans Nucl Sci, 2007, 54(6):1993
[3]
Hjalmarson H P, Pease R L, Witczak S C, et al. Mechanisms for radiation dose-rate sensitivity of bipolar transistors. IEEE Trans Nucl Sci, 2003, 50(6):1901 doi: 10.1109/TNS.2003.821803
[4]
Wang T Q, Wei X D, Li H J, et al. Calculation of X-ray attenuation and energy deposition. Atomic Energy Science and Technology, 2007, 41(4):399(in Chinese)
[5]
Scofield J H, Fleetwood D M. Physical basis for nondestructive tests of MOS radiation hardness. IEEE Trans Nucl Sci, 1991, 38(6):1567 doi: 10.1109/23.124147
[6]
Yoshino A, Ma T P, Okumura K. Front-and back-interface trap densities and subthreshold swings of fully depleted mode metal-oxide-semiconductor transistors fabricated on separation-by-implanted-oxygen substrates. Jpn J Appl Phys, 1998, 37(7):3933
[7]
Gaillardin M, Paillet P, Ferlet-Cavrois V, et al. High tolerance to total ionizing dose of Ω -shaped gate field-effect transistors. Appl Phys Lett, 2006, 88(22):223511 doi: 10.1063/1.2206097
[8]
Gaillardin M, Paillet P, Ferlet-Cavrois V, et al. Total ionizing dose effects on triple-gate FETs. IEEE Trans Nucl Sci, 2006, 53(6):3158 doi: 10.1109/TNS.2006.884351
[9]
Daugé F, Pretet J, Cristoloveanu S, et al. Coupling effects and channels separation in FinFETs. Solid-State Electron, 2004, 48(4):535 doi: 10.1016/j.sse.2003.09.033
[10]
Ritzenthaler R, Cristoloveanu S, Faynot O, et al. Lateral coupling and immunity to substrate effect in FET devices. Solid State Electron, 2006, 50(3):558
Fig. 1.  Structure of the traditional pseudo-MOS

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Fig. 2.  $V_{\rm g}$-$I_{\rm d}$ curve of pseudo-MOS under different radiations

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Fig. 3.  Effect to the threshold voltage drift from the trapped-oxide charges and the interface traps

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Fig. 4.  The structure of $\Omega$-FETs

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Fig. 5.  $V_{\rm g}$-$I_{\rm d}$ curve of the $\Omega$-FETs with fin widths $W_{\rm FIN}$ = 10 nm after different radiation doses

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Fig. 6.  $V_{\rm g}$-$I_{\rm d}$ curve of the $\Omega$-FETs with fin widths $W_{\rm FIN}$ = 10 nm and $W_{\rm FIN}$ = 1 μm, before and after irradiation

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Fig. 7.  Threshold voltage drift curve of the $\Omega$-FETs with fin widths $W_{\rm FIN}$ = 10 nm and $W_{\rm FIN}$ = 1 μm

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Fig. 8.  The front view configuration of the simulated structures

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Fig. 9.  Simulated voltage shift on the triple-gate FETs, the gate FETs and the $\Omega $-gate FETs after different radiation doses

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[1]
Rashkeev S N, Cirba C R, Fleetwood D M, et al. Physical model for enhanced interface-trap formation at low dose rates. IEEE Trans Nucl Sci, 2002, 49(6):26505 http://ieeexplore.ieee.org/document/1134199/authors
[2]
Chen X J, Barnaby H J, Vermeire B, et al. Mechanisms of enhanced radiation induced degradation due to excess molecular hydrogen in bipolar oxides. IEEE Trans Nucl Sci, 2007, 54(6):1993
[3]
Hjalmarson H P, Pease R L, Witczak S C, et al. Mechanisms for radiation dose-rate sensitivity of bipolar transistors. IEEE Trans Nucl Sci, 2003, 50(6):1901 doi: 10.1109/TNS.2003.821803
[4]
Wang T Q, Wei X D, Li H J, et al. Calculation of X-ray attenuation and energy deposition. Atomic Energy Science and Technology, 2007, 41(4):399(in Chinese)
[5]
Scofield J H, Fleetwood D M. Physical basis for nondestructive tests of MOS radiation hardness. IEEE Trans Nucl Sci, 1991, 38(6):1567 doi: 10.1109/23.124147
[6]
Yoshino A, Ma T P, Okumura K. Front-and back-interface trap densities and subthreshold swings of fully depleted mode metal-oxide-semiconductor transistors fabricated on separation-by-implanted-oxygen substrates. Jpn J Appl Phys, 1998, 37(7):3933
[7]
Gaillardin M, Paillet P, Ferlet-Cavrois V, et al. High tolerance to total ionizing dose of Ω -shaped gate field-effect transistors. Appl Phys Lett, 2006, 88(22):223511 doi: 10.1063/1.2206097
[8]
Gaillardin M, Paillet P, Ferlet-Cavrois V, et al. Total ionizing dose effects on triple-gate FETs. IEEE Trans Nucl Sci, 2006, 53(6):3158 doi: 10.1109/TNS.2006.884351
[9]
Daugé F, Pretet J, Cristoloveanu S, et al. Coupling effects and channels separation in FinFETs. Solid-State Electron, 2004, 48(4):535 doi: 10.1016/j.sse.2003.09.033
[10]
Ritzenthaler R, Cristoloveanu S, Faynot O, et al. Lateral coupling and immunity to substrate effect in FET devices. Solid State Electron, 2006, 50(3):558

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    Received: 25 December 2012 Revised: 23 April 2013 Online: Published: 01 September 2013

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      Article Navigation >  Journal of Semiconductors  > 2013  >  34(9): 094004
      Shiyao Liu, Wei He, Jianmin Cao, Siwen Huang. The total ionizing dose effects of non-planar triple-gate transistors[J]. Journal of Semiconductors, 2013, 34(9): 094004. doi: 10.1088/1674-4926/34/9/094004 ****S Y Liu, W He, J M Cao, S W Huang. The total ionizing dose effects of non-planar triple-gate transistors[J]. J. Semicond., 2013, 34(9): 094004. doi: 10.1088/1674-4926/34/9/094004.
      Citation:
      Shiyao Liu, Wei He, Jianmin Cao, Siwen Huang. The total ionizing dose effects of non-planar triple-gate transistors[J]. Journal of Semiconductors, 2013, 34(9): 094004. doi: 10.1088/1674-4926/34/9/094004 ****
      S Y Liu, W He, J M Cao, S W Huang. The total ionizing dose effects of non-planar triple-gate transistors[J]. J. Semicond., 2013, 34(9): 094004. doi: 10.1088/1674-4926/34/9/094004.
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      The total ionizing dose effects of non-planar triple-gate transistors

      DOI: 10.1088/1674-4926/34/9/094004

      • Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Shenzhen University, Shenzhen 518060, China

      Funds:

      Project supported by the National Science Foundation for Young Scholars of China (No. 11105092) and the Shenzhen Science and Technology Development Funds (Nos. JC201005280565A, JC201005280558A, GJHS20120621142118853)

      the Shenzhen Science and Technology Development Funds JC201005280565A

      the National Science Foundation for Young Scholars of China 11105092

      the Shenzhen Science and Technology Development Funds GJHS20120621142118853

      the Shenzhen Science and Technology Development Funds JC201005280558A

      More Information
      • Corresponding author: Liu Shiyao, Email:lewis_yao@163.com
      • Received Date: 2012-12-25
      • Revised Date: 2013-04-23
      • Published Date: 2013-09-01

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