Fig. 1.
The schematic circuit diagram of a half-bridge HVIC
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| Citation: |
Moufu Kong, Xingbi Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. Journal of Semiconductors, 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009
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M F Kong, X B Chen. Novel high-voltage, high-side and low-side power devices with a single control signal[J]. J. Semicond., 2013, 34(9): 094009. doi: 10.1088/1674-4926/34/9/094009.
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Novel high-voltage, high-side and low-side power devices with a single control signal
DOI: 10.1088/1674-4926/34/9/094009
More Information
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Abstract
Novel high-voltage, high-side and low-side power devices, whose control circuits are referred to as the tub, are proposed and investigated to reduce chip area and improve the reliability of high-voltage integrated circuits. By using the tub circuit to control a branch circuit consisting of a PMOS and a resistor, a pulse signal is generated to control the low-side n-LDMOS after being processed by a low-voltage circuit. Thus, the high-voltage level-shifting circuit is not needed any more, and the parasitic effect of the conventional level-shifting circuit is eliminated. Moreover, the specific on-resistance of the proposed low-side device is reduced by more than 14.3% compared with the conventional one. In the meantime, integrated low-voltage power supplies for the low-voltage circuit and the tub circuit are also proposed. Simulations are performed with MEDICI and SPICE, and the results show that the expectant functions are achieved well.-
Keywords:
- power devices,
- LDMOS,
- pulse signal,
- low-voltage power supply
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References
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