J. Semicond. > 2013, Volume 34 > Issue 9 > 094010
|

SEMICONDUCTOR DEVICES

The design and fabrication of a GaN-based monolithic light-emitting diode array

Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang and Jinmin Li

+ Author Affiliations

 Corresponding author: Zhan Teng, Email:zhanteng10@semi.ac.cn

DOI: 10.1088/1674-4926/34/9/094010

PDF

Abstract: We report a new monolithic structure of GaN-based light-emitting diode (LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic light-emitting diode (MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current-voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes.

Key words: GaN, LED, monolithic, array, high voltage



[1]
Nakamura S, Fasol G. The blue laser diode. New York:Springer, 1997
[2]
Schubert E F. Light-emitting diodes. New York:Cambridge University Process, 2006
[3]
Yen H H, Kuo H C, Yeh W Y. Characteristics of single-chip GaN-based alternating current light-emitting diode. Jpn J Appl Phys, 2008, 47(12):8808 doi: 10.1143/JJAP.47.8808
[4]
Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN based high voltage light-emitting diodes. IEEE Electron Device Lett, 2011, 32(8):1098 doi: 10.1109/LED.2011.2153176
Fig. 1.  Fabrication process of a light-emitting diode array

DownLoad: Full-Size Img PowerPoint
Fig. 2.  (a) $\sim $45$^\circ$ epitaxy sidewall angle fabricated method and SEM photograph. (b) $\sim $80$^\circ$ epitaxy sidewall angle fabricated method and SEM photograph. (c) SEM photograph of isolation trench and sidewall after deep etching. (d) SiO2 insulation and metal electrode layer deposited on the sidewall of the isolation trench

DownLoad: Full-Size Img PowerPoint
Fig. 3.  Lighting photograph of the 12 V HV-LED under 20 mA operation current and the SEM photograph of the isolation layer and interconnection electrode cross the deep trench

DownLoad: Full-Size Img PowerPoint
Fig. 4.  I-V characteristic of the 12 V HV-LED

DownLoad: Full-Size Img PowerPoint
Fig. 5.  I-V characteristics of microchip 1, microchip 2, microchip 3 and microchip 4

DownLoad: Full-Size Img PowerPoint
Fig. 6.  The curves of light output power and peak wavelength versus drive current

DownLoad: Full-Size Img PowerPoint
[1]
Nakamura S, Fasol G. The blue laser diode. New York:Springer, 1997
[2]
Schubert E F. Light-emitting diodes. New York:Cambridge University Process, 2006
[3]
Yen H H, Kuo H C, Yeh W Y. Characteristics of single-chip GaN-based alternating current light-emitting diode. Jpn J Appl Phys, 2008, 47(12):8808 doi: 10.1143/JJAP.47.8808
[4]
Wang C H, Lin D W, Lee C Y, et al. Efficiency and droop improvement in GaN based high voltage light-emitting diodes. IEEE Electron Device Lett, 2011, 32(8):1098 doi: 10.1109/LED.2011.2153176

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 3076 Times PDF downloads: 20 Times Cited by: 0 Times

    History

    Received: 30 December 2012 Revised: 27 April 2013 Online: Published: 01 September 2013

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 2013  >  34(9): 094010
      Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. Journal of Semiconductors, 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010 ****T Zhan, Y Zhang, J Li, J Ma, Z Q Liu, X Y Yi, G H Wang, J M Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. J. Semicond., 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010.
      Citation:
      Teng Zhan, Yang Zhang, Jing Li, Jun Ma, Zhiqiang Liu, Xiaoyan Yi, Guohong Wang, Jinmin Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. Journal of Semiconductors, 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010 ****
      T Zhan, Y Zhang, J Li, J Ma, Z Q Liu, X Y Yi, G H Wang, J M Li. The design and fabrication of a GaN-based monolithic light-emitting diode array[J]. J. Semicond., 2013, 34(9): 094010. doi: 10.1088/1674-4926/34/9/094010.
      shu

      The design and fabrication of a GaN-based monolithic light-emitting diode array

      DOI: 10.1088/1674-4926/34/9/094010

      • Semiconductor Lighting R & D Center, Chinese Academy of Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      Funds:

      the National High Technology Research and Development of China 2011AA03A105

      the National High Technology Research and Development of China 2011AA03A108

      Project supported by the National High Technology Research and Development of China (Nos. 2011AA03A108, 2011AA03A105)

      More Information
      • Corresponding author: Zhan Teng, Email:zhanteng10@semi.ac.cn
      • Received Date: 2012-12-30
      • Revised Date: 2013-04-27
      • Published Date: 2013-09-01

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return