J. Semicond. > 2014, Volume 35 > Issue 11 > 114004
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SEMICONDUCTOR DEVICES

The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

Wei Wang1, , Lu Zhang1, Xueying Wang2, Zhubing Wang2, Ting Zhang1, Na Li1, Xiao Yang1 and Gongshu Yue1

+ Author Affiliations

 Corresponding author: Wang Wei, Email:wangwej@njupt.edu.cn

DOI: 10.1088/1674-4926/35/11/114004

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Abstract: To overcome short-channel effects (SCEs) in high-performance device applications, a novel structure of CNTFET with a combination of halo and linear doping structure (HL-CNTFET) has been proposed. It has been theoretically investigated by a quantum kinetic model, which is based on two-dimensional non-equilibrium Green's functions solved self-consistently with Poisson's equations. We have studied the effect of halo doping and linear doping structure on static and dynamical performances of HL-CNTFET. It is demonstrated that a halo doping structure can decrease the drain leakage current and improve the on/off current ratio, and that linear doping can improve high-frequency and switching performance.

Key words: CNTFET, NEGF, Halo doping, SCE, linear doping



[1]
Lu R F, Lu Y P, Lee S Y, et al. Terahertz response in single-walled carbon nanotube transistor:a real-time quantum dynamics simulation. Nanotechnology, 2009, 20(50):505401 doi: 10.1088/0957-4484/20/50/505401
[2]
Kienle D, Léonard F. Terahertz response of carbon nanotube transistors. Phys Rev Lett, 2000, 103(2):026601 http://www.tp1.physik.uni-bayreuth.de/de/publications/2009/Terahertz_Response_of_Carbon_Nanotube_Transistors/Terahertz_Response_of_Carbon_Nanotube_Transistors_Kienle__2009.pdf
[3]
Tans S J, Verschueren A R M, Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature, 1998, 393(7):49 https://www.nature.com/nature/journal/v393/n6680/pdf/393049a0.pdf?foxtrotcallback=true
[4]
Shulaker M, Hills G, Patil N, et al. Carbon nanotube computer. Nature, 2013, 501(9):526 http://www.nature.com/nature/journal/v501/n7468/full/nature12502.html
[5]
Shulaker M, Rethy J V, Hills G, et al. Experimental demonstration of a fully digital capacitive sensor interface build entirely using carbon nanotube FETs. Proc Int Solid State Circuits Conf, 2013:112 http://ieeexplore.ieee.org/document/6487660/
[6]
Hazeghi A, Krishnamohan T, Wong H. Schottky-barrier carbon nanotube field-effect transistor modeling. IEEE Trans Electron Devices, 2007, 54(3):439 doi: 10.1109/TED.2006.890384
[7]
Guo J, Lundstrom M, Datta S. Performance projections for ballistic carbon nanotube field-effect transistors. Appl Phys Lett, 2002, 80(17):3192 doi: 10.1063/1.1474604
[8]
Fiori G, Iannaccone G, Klimeck G. A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry. IEEE Trans Electron Devices, 2006, 53(8):1782 doi: 10.1109/TED.2006.878018
[9]
Orouji A A, Arefinia Z. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor. Phys E:Low-Dimensional Syst Nanostructures, 2009, 41(10):552 http://www.sciencedirect.com/science/article/pii/S1386947708003767
[10]
Liu X H, Zhao H L, Li T Y, et al. Improvement on the electron transport efficiency of the carbon nanotube field effect transistor device by introducing heterogeneous-dual-metal-gate structure. Acta Phys Sin, 2013, 62(14):147308 http://en.cnki.com.cn/Article_en/CJFDTotal-WLXB201314064.htm
[11]
Arefinia Z, Orouji A A. Quantum simulation study of a new carbon nanotube field-effect transistor with electrically induced source/drain extension. IEEE Trans Device Mater Reliab, 2009, 9(2):237 doi: 10.1109/TDMR.2009.2015458
[12]
Xia T S, Register L F, Banerjee S K. Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect. Solid-State Electron, 2005, 49(3):860 http://www.sciencedirect.com/science/article/pii/S003811010500064X
[13]
Guo J, Hasan S, Javey A, et al, Assessment of high-frequency performance potential for carbon nanotube transistors. IEEE Trans Nanotechnol, 2005, 4(6):715 doi: 10.1109/TNANO.2005.858601
[14]
Chen L, Pulfrey D L. Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance. Solid-State Electron, 2009, 53(9):935 doi: 10.1016/j.sse.2009.05.006
[15]
Djeffal F, Meguellati M, Benhaya A. A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs. Physica E:Low-Dimensional Systems and Nanostructures, 2009, 41(10):1872 doi: 10.1016/j.physe.2009.08.002
[16]
Reddy G V, Kumar M J. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation. IEEE Trans Nanotechnol, 2005, 4(2):260 doi: 10.1109/TNANO.2004.837845
[17]
Alam K, Lake R. Role of doping in carbon nanotube transistors with source/drain underlaps. IEEE Trans Nanotechnol, 2007, 6(6):652 doi: 10.1109/TNANO.2007.908170
[18]
Kordrostami Z, Sheikhi M H, Zarifkar A. Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs. IEEE Trans Nanotechnol, 2012, 11(3):526 doi: 10.1109/TNANO.2011.2181998
[19]
Sarvari H, Ghayour R. Design of GNRFET using different doping profiles near the source and drain contacts. International Journal of Electronics, 2012, 99(5):673 doi: 10.1080/00207217.2011.643496
[20]
Zhang Z, Song S C, Huffman C. Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process. Electrochem Solid-State Lett, 2005, 8(10):G271 doi: 10.1149/1.2030447
[21]
Zhou C, Kong J, Yenilmez E, et al. Modulated chemical doping of individual carbon nanotubes. Science, 2000, 290(5496):1552 doi: 10.1126/science.290.5496.1552
[22]
Datta S. Nanoscale device modeling:the Green's function method. Superlatt Microstruct, 2000, 28(4):253 doi: 10.1006/spmi.2000.0920
[23]
Wang W, Li N, Ren Y, et al. A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs. Journal of Semiconductors, 2013, 34(12):124002 doi: 10.1088/1674-4926/34/12/124002
[24]
Venugopal R, Ren Z, Datta S, et al. Simulating quantum transport in nanoscale CNTFETs:real versus mode-space approaches. J Appl Phys, 2002, 92(7):3730 doi: 10.1063/1.1503165
[25]
Wang W, Yang X, Li N, et al. Numerical study on the performance metrics of lightly doped drain and source grapheme nanoribbon field effect transistors with double-material-gate. Superlattices and Microstructures, 2013, 64(9):227 http://www.sciencedirect.com/science/article/pii/S0749603613003157
Fig. 1.  Cross-sectional view of the proposed CNTFET, it is symmetrical with respect to the center of the channel. The gate includes two metals with different work functions.

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Fig. 2.  (Color online) The output characteristics of C-CNTFET, L-CNTFET, H-CNTFET and HL-CNTFET for different gate voltages.

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Fig. 3.  Transfer characteristics of C-, L-, H-and HL-CNTFET structures at the same gate length and $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 4.  Sub-threshold swing of C-, H-, L-and HL-CNTFET for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 5.  Transfer characteristics of HL-and LD-HMG-CNTFET structures at $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 6.  Sub-threshold swing of HL-and LD-HMG-CNTFET for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 7.  The energy band diagram of different CNTFET structures (a) C-, (b) L-, (c) H-and (d) HL-CNTFET structures at $L_{\rm g}$ $=$ 15.3 nm, $V_{\rm GS}$ $=$ $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 8.  Comparisons of lateral electric field variation along the channel for (a) C-, (b) L-, (c) H-and (d) HL-CNTFET structures at $V_{\rm GS}$ $=$ $V_{\rm DS}$ $=$ 0.7 V, $L_{\rm g}$ $=$ 15.3 nm.

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Fig. 9.  The On/Off current ratio of C-, L-, H-and HL-CNTFET for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 10.  The delay time of C-, L-, H-and HL-CNTFET versus gate length for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 11.  The cutoff frequency of C-, L-, H-and HL-CNTFET versus gate length for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 12.  The transconductance of C-, L-, H-and HL-CNTFET versus gate length for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 13.  The gate capacitance of C-, L-, H-and HL-CNTFET versus gate length for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 14.  The delay time of HL-CNTFET versus halo doping for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 15.  The cutoff frequency of HL-CNTFET versus halo doping for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 16.  The gate capacitance of HL-CNTFET versus halo doping for $V_{\rm DS}$ $=$ 0.7 V.

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Fig. 17.  The transconductance of HL-CNTFET versus halo doping for $V_{\rm DS}$ $=$ 0.7 V.

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Table 1.   The $I_{\rm on}$/$I_{\rm off}$ for CNTFETs with different structures at $V_{\rm DS}$ $=$ 0.7 V.
[1]
Lu R F, Lu Y P, Lee S Y, et al. Terahertz response in single-walled carbon nanotube transistor:a real-time quantum dynamics simulation. Nanotechnology, 2009, 20(50):505401 doi: 10.1088/0957-4484/20/50/505401
[2]
Kienle D, Léonard F. Terahertz response of carbon nanotube transistors. Phys Rev Lett, 2000, 103(2):026601 http://www.tp1.physik.uni-bayreuth.de/de/publications/2009/Terahertz_Response_of_Carbon_Nanotube_Transistors/Terahertz_Response_of_Carbon_Nanotube_Transistors_Kienle__2009.pdf
[3]
Tans S J, Verschueren A R M, Dekker C. Room-temperature transistor based on a single carbon nanotube. Nature, 1998, 393(7):49 https://www.nature.com/nature/journal/v393/n6680/pdf/393049a0.pdf?foxtrotcallback=true
[4]
Shulaker M, Hills G, Patil N, et al. Carbon nanotube computer. Nature, 2013, 501(9):526 http://www.nature.com/nature/journal/v501/n7468/full/nature12502.html
[5]
Shulaker M, Rethy J V, Hills G, et al. Experimental demonstration of a fully digital capacitive sensor interface build entirely using carbon nanotube FETs. Proc Int Solid State Circuits Conf, 2013:112 http://ieeexplore.ieee.org/document/6487660/
[6]
Hazeghi A, Krishnamohan T, Wong H. Schottky-barrier carbon nanotube field-effect transistor modeling. IEEE Trans Electron Devices, 2007, 54(3):439 doi: 10.1109/TED.2006.890384
[7]
Guo J, Lundstrom M, Datta S. Performance projections for ballistic carbon nanotube field-effect transistors. Appl Phys Lett, 2002, 80(17):3192 doi: 10.1063/1.1474604
[8]
Fiori G, Iannaccone G, Klimeck G. A three-dimensional simulation study of the performance of carbon nanotube field-effect transistors with doped reservoirs and realistic geometry. IEEE Trans Electron Devices, 2006, 53(8):1782 doi: 10.1109/TED.2006.878018
[9]
Orouji A A, Arefinia Z. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor. Phys E:Low-Dimensional Syst Nanostructures, 2009, 41(10):552 http://www.sciencedirect.com/science/article/pii/S1386947708003767
[10]
Liu X H, Zhao H L, Li T Y, et al. Improvement on the electron transport efficiency of the carbon nanotube field effect transistor device by introducing heterogeneous-dual-metal-gate structure. Acta Phys Sin, 2013, 62(14):147308 http://en.cnki.com.cn/Article_en/CJFDTotal-WLXB201314064.htm
[11]
Arefinia Z, Orouji A A. Quantum simulation study of a new carbon nanotube field-effect transistor with electrically induced source/drain extension. IEEE Trans Device Mater Reliab, 2009, 9(2):237 doi: 10.1109/TDMR.2009.2015458
[12]
Xia T S, Register L F, Banerjee S K. Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect. Solid-State Electron, 2005, 49(3):860 http://www.sciencedirect.com/science/article/pii/S003811010500064X
[13]
Guo J, Hasan S, Javey A, et al, Assessment of high-frequency performance potential for carbon nanotube transistors. IEEE Trans Nanotechnol, 2005, 4(6):715 doi: 10.1109/TNANO.2005.858601
[14]
Chen L, Pulfrey D L. Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performance. Solid-State Electron, 2009, 53(9):935 doi: 10.1016/j.sse.2009.05.006
[15]
Djeffal F, Meguellati M, Benhaya A. A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs. Physica E:Low-Dimensional Systems and Nanostructures, 2009, 41(10):1872 doi: 10.1016/j.physe.2009.08.002
[16]
Reddy G V, Kumar M J. A new dual-material double-gate (DMDG) nanoscale SOI MOSFET-two-dimensional analytical modeling and simulation. IEEE Trans Nanotechnol, 2005, 4(2):260 doi: 10.1109/TNANO.2004.837845
[17]
Alam K, Lake R. Role of doping in carbon nanotube transistors with source/drain underlaps. IEEE Trans Nanotechnol, 2007, 6(6):652 doi: 10.1109/TNANO.2007.908170
[18]
Kordrostami Z, Sheikhi M H, Zarifkar A. Influence of channel and underlap engineering on the high-frequency and switching performance of CNTFETs. IEEE Trans Nanotechnol, 2012, 11(3):526 doi: 10.1109/TNANO.2011.2181998
[19]
Sarvari H, Ghayour R. Design of GNRFET using different doping profiles near the source and drain contacts. International Journal of Electronics, 2012, 99(5):673 doi: 10.1080/00207217.2011.643496
[20]
Zhang Z, Song S C, Huffman C. Integration of dual metal gate CMOS on high-k dielectrics utilizing a metal wet etch process. Electrochem Solid-State Lett, 2005, 8(10):G271 doi: 10.1149/1.2030447
[21]
Zhou C, Kong J, Yenilmez E, et al. Modulated chemical doping of individual carbon nanotubes. Science, 2000, 290(5496):1552 doi: 10.1126/science.290.5496.1552
[22]
Datta S. Nanoscale device modeling:the Green's function method. Superlatt Microstruct, 2000, 28(4):253 doi: 10.1006/spmi.2000.0920
[23]
Wang W, Li N, Ren Y, et al. A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs. Journal of Semiconductors, 2013, 34(12):124002 doi: 10.1088/1674-4926/34/12/124002
[24]
Venugopal R, Ren Z, Datta S, et al. Simulating quantum transport in nanoscale CNTFETs:real versus mode-space approaches. J Appl Phys, 2002, 92(7):3730 doi: 10.1063/1.1503165
[25]
Wang W, Yang X, Li N, et al. Numerical study on the performance metrics of lightly doped drain and source grapheme nanoribbon field effect transistors with double-material-gate. Superlattices and Microstructures, 2013, 64(9):227 http://www.sciencedirect.com/science/article/pii/S0749603613003157

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    Received: 03 April 2014 Revised: 05 June 2014 Online: Published: 01 November 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(11): 114004
      Wei Wang, Lu Zhang, Xueying Wang, Zhubing Wang, Ting Zhang, Na Li, Xiao Yang, Gongshu Yue. The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs[J]. Journal of Semiconductors, 2014, 35(11): 114004. doi: 10.1088/1674-4926/35/11/114004 ****W Wang, L Zhang, X Y Wang, Z B Wang, T Zhang, N Li, X Yang, G S Yue. The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs[J]. J. Semicond., 2014, 35(11): 114004. doi: 10.1088/1674-4926/35/11/114004.
      Citation:
      Wei Wang, Lu Zhang, Xueying Wang, Zhubing Wang, Ting Zhang, Na Li, Xiao Yang, Gongshu Yue. The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs[J]. Journal of Semiconductors, 2014, 35(11): 114004. doi: 10.1088/1674-4926/35/11/114004 ****
      W Wang, L Zhang, X Y Wang, Z B Wang, T Zhang, N Li, X Yang, G S Yue. The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs[J]. J. Semicond., 2014, 35(11): 114004. doi: 10.1088/1674-4926/35/11/114004.
      shu

      The combined effects of halo and linear doping effects on the high-frequency and switching performance in ballistic CNTFETs

      DOI: 10.1088/1674-4926/35/11/114004
      • 1.

        College of Electronic Science Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

      • 2.

        College of Telecommunications and information Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

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      • Corresponding author: Wang Wei, Email:wangwej@njupt.edu.cn
      • Received Date: 2014-04-03
      • Revised Date: 2014-06-05
      • Published Date: 2014-11-01

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