Fig. 1.
Schematic diagrams of LC-tuned oscillator. (a) Using complementary crossed coupled transistor pairs. (b) All NMOS VCO. (c) The proposed current-reuse differential LC-VCO.
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Zhu Li, Zhigong Wang, Zhiqun Li, Qin Li, Faen Liu. IC design of low power, wide tuning range VCO in 90 nm CMOS technology[J]. Journal of Semiconductors, 2014, 35(12): 125013. doi: 10.1088/1674-4926/35/12/125013
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Z Li, Z G Wang, Z Q Li, Q Li, F E Liu. IC design of low power, wide tuning range VCO in 90 nm CMOS technology[J]. J. Semicond., 2014, 35(12): 125013. doi: 10.1088/1674-4926/35/12/125013.
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IC design of low power, wide tuning range VCO in 90 nm CMOS technology
DOI: 10.1088/1674-4926/35/12/125013
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Abstract
A low power VCO with a wide tuning range and low phase noise has been designed and realized in a standard 90 nm CMOS technology. A newly proposed current-reuse cross-connected pair is utilized as a negative conductance generator to compensate the energy loss of the resonator. The supply current is reduced by half compared to that of the conventional LC-VCO. An improved inversion-mode MOSFET (IMOS) varactor is introduced to extend the capacitance tuning range from 32.8% to 66%. A detailed analysis of the proposed varactor is provided. The VCO achieves a tuning range of 27-32.5 GHz, exhibiting a frequency tuning range (FTR) of 18.4% and a phase noise of -101.38 dBc/Hz at 1 MHz offset from a 30 GHz carrier, and shows an excellent FOM of -185 dBc/Hz. With the voltage supply of 1.5 V, the core circuit of VCO draws only 2.1 mA DC current. -
References
[1] Cao C H, Kenneth K O. Millimeter-wave voltage-controlled oscillators in 0.13-μm CMOS technology. IEEE J Solid-State Circuits, 2006, 41:1297 doi: 10.1109/JSSC.2006.874321[2] Nakamura T, Masuda T, Shiramizu N, et al. A wide-tuning-range VCO with small VCO-gain fluctuation for multi-band W-CDMA RFIC. Proceedings of the 32th European Solid State Circuits Conference, 2006:448 http://i-scover.ieice.org/iscover/page/ARTICLE_TRAN_E96-C_6_790[3] Electromagnetic Simulation and Optimization. Bay Technology, Aptos, CA[4] Andreani P, Mattisson S. On the use of MOS varactors in RF VCO's. IEEE J Solid-State Circuits, 2000, 35(6):905 doi: 10.1109/4.845194[5] Wong W M Y, Hui P S, Chen Z, et al. A wide tuning range gated varactor. IEEE J Solid-State Circuits, 2000, 35:773 doi: 10.1109/4.841506[6] Lu J, Wang N Y, Chang M C F. 14.6-22.2 GHz LC-VCO in 65 nm CMOS technology for wideband applications. Electron Lett, 2011, 47(6):385 doi: 10.1049/el.2011.0348[7] Kwok K, Long J R. A 23-to-29 GHz transconductor-tuned VCO MMIC in 0.13μm CMOS. IEEE J Solid-State Circuits, 2007, 42(12):2878 doi: 10.1109/JSSC.2007.908740[8] Bu G, Tavakoli A R, Entesari K. A 24 GHz indirect VCO in 0. 18-μm CMOS technology. Proceedings of the 3rd European Microwave Integrated Circuits Conference, 2012[9] Yang C Y, Chang C H, Lin J M, et al. A 20/40-GHz dual-band voltage-controlled frequency source in 0.13-μm CMOS. IEEE Trans Microw Theory Tech, 2011, 59(8):2008 doi: 10.1109/TMTT.2011.2153873 -
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