Fig. 1.
Temperature-dependent $C$ -$V$ curves of samples (a) #A and (b) #B.
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Qiaozhi Zhu, Dejun Wang. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J]. Journal of Semiconductors, 2014, 35(2): 024002. doi: 10.1088/1674-4926/35/2/024002
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Q Z Zhu, D J Wang. Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors[J]. J. Semicond., 2014, 35(2): 024002. doi: 10.1088/1674-4926/35/2/024002.
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Effects of wet-ROA on shallow interface traps of n-type 4H-SiC MOS capacitors
DOI: 10.1088/1674-4926/35/2/024002
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Abstract
The effects of wet re-oxidation annealing (wet-ROA) on the shallow interface traps of n-type 4H-SiC metal-oxide-semiconductor (MOS) capacitors were investigated by Gray-Brown method and angle-dependent X-ray photoelectron spectroscopy technique. The results present the energy distribution of the density of interface traps ($D_{\rm it})$ from 0 to 0.2 eV below SiC conduction band edge ($E_{\rm C})$ of the sample with wet-ROA for the first time, and indicate that wet-ROA could reduce the $D_{\rm it}$ in this energy range by more than 60%. The reduction in $D_{\rm it}$ is attributed to the reaction between the introduced oxygen and the SiO$_{x}$C$_{y}$ species, which results in C release and SiO$_{x}$C$_{y}$ transformation into higher oxidation states, thus reducing the SiO$_{x}$C$_{y}$ content and the SiO$_{x}$C$_{y}$ interface transition region thickness.-
Keywords:
- SiC,
- MOS,
- shallow interface traps,
- wet-ROA,
- interface transition region
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References
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