Fig. 1.
Schematic layout of a 1 $\times $ 4 MMI coupler.
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| Citation: |
Fei Guo, Dan Lu, Ruikang Zhang, Baojun Wang, Xilin Zhang, Chen Ji. 1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides[J]. Journal of Semiconductors, 2014, 35(2): 024012. doi: 10.1088/1674-4926/35/2/024012
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F Guo, D Lu, R K Zhang, B J Wang, X L Zhang, C Ji. 1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides[J]. J. Semicond., 2014, 35(2): 024012. doi: 10.1088/1674-4926/35/2/024012.
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1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides
DOI: 10.1088/1674-4926/35/2/024012
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Abstract
A 1.3-μm 1×4 MMI coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1×4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB.-
Keywords:
- MMI,
- shallow etched waveguide,
- beam propagation method
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References
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