J. Semicond. > 2014, Volume 35 > Issue 4 > 044008
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SEMICONDUCTOR DEVICES

The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

Xue Wu1, 2, 3, , Wu Lu1, 2, Yudong Li1, 2, 3, Qi Guo1, 2, Xin Wang1, 2, 3, Xingyao Zhang1, 2, 3, Xin Yu1, 2 and Wuying Ma1, 2, 3

+ Author Affiliations

 Corresponding author: Wu Xue, Email:xuew86@gmail.com

DOI: 10.1088/1674-4926/35/4/044008

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Abstract: This paper presents the total ionizing dose test results at different biases and dose rates for AD9233, which is fabricated using a modern CMOS process. The experimental results show that the digital parts are more sensitive than the other parts. Power down is the worst-case bias, and this phenomenon is first found in the total ionizing dose effect of analog-to-digital converters. We also find that the AC as well as DC parameters are sensitive to the total ionizing dose at a high dose rate, whereas none of the parameters are sensitive at a low dose rate. The test facilities, results and analysis are presented in detail.

Key words: ionizing radiation, analog-to-digital converter, different biases, dose-rate effects



[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1993:112 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=700576
[2]
Turflinger T L, Davey M V, Bings J P. Radiation effects in analog CMOS analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1996:6 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=574182
[3]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in high resolution (12-/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[4]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[5]
Black J D, Eaton P H, Chavez J R, et al. Total dose evaluation of state-of-the-art commercial analog to digital converters for space-based imaging applications. IEEE Work shop Record, Radiation Effects Data Workshop, 1998:121 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=731490
[6]
Guo Qi, Ren Diyuan, Fan Long, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753 http://www.en.cnki.com.cn/Article_en/CJFDTOTAL-HJSU701.005.htm
[7]
Wu Xue, Lu Wu, Wang Yiyuan, et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter. Journal of Semiconductors, 2013, 34(1):015006 doi: 10.1088/1674-4926/34/1/015006
[8]
Witczak S C, Lacoe R C, Osborn J V, et al. Dose rate sensitivity of modern nMOSFETs. IEEE Trans Nucl Sci, 2005, 52(6):2602 doi: 10.1109/TNS.2005.860709
[9]
Zebrev G I, Gorbunov M S. Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern MOSFETs. IEEE Trans Nucl Sci, 2009, 56(4):2230 doi: 10.1109/TNS.2009.2016096
[10]
Faccio F, Cervelli G. Radiation-induced edge effects in deep submicron CMOS transistors. IEEE Nucl Plasma Sciences Soc, 2005, 52(6):2413 http://ieeexplore.ieee.org/document/1589217/
[11]
Liu Zhangli, Hu Zhenyuan, Zhang Zhengxuan, et al. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET. Journal of Semiconductors, 2011, 32(6):064004 doi: 10.1088/1674-4926/32/6/064004
[12]
Faccio F, Barnaby H J, Chen X J, et al. Total ionizing dose effects in shallow trench isolation oxides. Microelectron Reliab, 2008, 48(7):1000 doi: 10.1016/j.microrel.2008.04.004
[13]
Barnaby H J. Total-ionizing-dose effects in modern CMOS technologies. IEEE Nucl Plasma Sci Soc, 2006, 53(6):3103 doi: 10.1109/TNS.2006.885952
[14]
Razavi B. Design of analog CMOS integrated circuits. New York:The McGraw-Hill Press, 2001
Fig. 1.  The relationship between the power-down current and the total dose under four conditions.

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Fig. 2.  The relationship between INL and total dose under four conditions.

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Fig. 3.  The relationship between SNR and total dose under four conditions.

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Fig. 4.  The responses of the power-down current of the total dose and the annealing time under four conditions.

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Fig. 5.  Schematic illustration of (a) intra-transistor leakage and (b) inter-device leakage.

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Fig. 6.  Simple block diagram of a flash ADC.

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Table 1.   Electrical test conditions.

Table 2.   Irradiation biases.

Table 3.   Other parameter results at pre-and post-irradiation, and room-temperature annealing.
[1]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in 12-bit successive-approximation analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1993:112 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=700576
[2]
Turflinger T L, Davey M V, Bings J P. Radiation effects in analog CMOS analog-to-digital converters. IEEE Workshop Record, Radiation Effects Data Workshop, 1996:6 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=574182
[3]
Lee C I, Rax B G, Johnston A H. Total ionizing dose effects in high resolution (12-/14-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1994, 41(6):2459 doi: 10.1109/23.340602
[4]
Lee C I, Rax B G, Johnston A H. Hardness assurance and testing techniques for high resolution (12 to 16-bit) analog-to-digital converters. IEEE Trans Nucl Sci, 1995, 42(6):1681 doi: 10.1109/23.488766
[5]
Black J D, Eaton P H, Chavez J R, et al. Total dose evaluation of state-of-the-art commercial analog to digital converters for space-based imaging applications. IEEE Work shop Record, Radiation Effects Data Workshop, 1998:121 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=731490
[6]
Guo Qi, Ren Diyuan, Fan Long, et al. Ionizing radiation effect of analog to digital converters. Nucl Tech, 1997, 20(1):753 http://www.en.cnki.com.cn/Article_en/CJFDTOTAL-HJSU701.005.htm
[7]
Wu Xue, Lu Wu, Wang Yiyuan, et al. Total ionizing dose effects on a radiation-induced BiMOS analog-to-digital converter. Journal of Semiconductors, 2013, 34(1):015006 doi: 10.1088/1674-4926/34/1/015006
[8]
Witczak S C, Lacoe R C, Osborn J V, et al. Dose rate sensitivity of modern nMOSFETs. IEEE Trans Nucl Sci, 2005, 52(6):2602 doi: 10.1109/TNS.2005.860709
[9]
Zebrev G I, Gorbunov M S. Modeling of radiation-induced leakage and low dose-rate effects in thick edge isolation of modern MOSFETs. IEEE Trans Nucl Sci, 2009, 56(4):2230 doi: 10.1109/TNS.2009.2016096
[10]
Faccio F, Cervelli G. Radiation-induced edge effects in deep submicron CMOS transistors. IEEE Nucl Plasma Sciences Soc, 2005, 52(6):2413 http://ieeexplore.ieee.org/document/1589217/
[11]
Liu Zhangli, Hu Zhenyuan, Zhang Zhengxuan, et al. Gate length dependence of the shallow trench isolation leakage current in an irradiated deep submicron NMOSFET. Journal of Semiconductors, 2011, 32(6):064004 doi: 10.1088/1674-4926/32/6/064004
[12]
Faccio F, Barnaby H J, Chen X J, et al. Total ionizing dose effects in shallow trench isolation oxides. Microelectron Reliab, 2008, 48(7):1000 doi: 10.1016/j.microrel.2008.04.004
[13]
Barnaby H J. Total-ionizing-dose effects in modern CMOS technologies. IEEE Nucl Plasma Sci Soc, 2006, 53(6):3103 doi: 10.1109/TNS.2006.885952
[14]
Razavi B. Design of analog CMOS integrated circuits. New York:The McGraw-Hill Press, 2001

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    Received: 25 September 2013 Revised: 01 November 2013 Online: Published: 01 April 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(4): 044008
      Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. Journal of Semiconductors, 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008 ****X Wu, W Lu, Y D Li, Q Guo, X Wang, X Y Zhang, X Yu, W Y Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. J. Semicond., 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008.
      Citation:
      Xue Wu, Wu Lu, Yudong Li, Qi Guo, Xin Wang, Xingyao Zhang, Xin Yu, Wuying Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. Journal of Semiconductors, 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008 ****
      X Wu, W Lu, Y D Li, Q Guo, X Wang, X Y Zhang, X Yu, W Y Ma. The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J]. J. Semicond., 2014, 35(4): 044008. doi: 10.1088/1674-4926/35/4/044008.
      shu

      The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

      DOI: 10.1088/1674-4926/35/4/044008
      • 1.

        Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

      • 2.

        Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China

      • 3.

        University of the Chinese Academy of Sciences, Beijing 100049, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 11005152)

      the National Natural Science Foundation of China 11005152

      More Information
      • Corresponding author: Wu Xue, Email:xuew86@gmail.com
      • Received Date: 2013-09-25
      • Revised Date: 2013-11-01
      • Published Date: 2014-04-01

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