Fig. 1.
The model of conventional packaged SiGe LNA.
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| Citation: |
Yanbin Luo, Jian Shi, Chengyan Ma, Yebing Gan, Min Qian. A high linearity SiGe HBT LNA for GPS receiver[J]. Journal of Semiconductors, 2014, 35(4): 045001. doi: 10.1088/1674-4926/35/4/045001
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Y B Luo, J Shi, C Y Ma, Y B Gan, M Qian. A high linearity SiGe HBT LNA for GPS receiver[J]. J. Semicond., 2014, 35(4): 045001. doi: 10.1088/1674-4926/35/4/045001.
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Abstract
A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process. A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1.11 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500×560 μm2 area and consumes 3.6 mA from a 2.85 V power supply.-
Keywords:
- LNA,
- noise figure,
- high linearity,
- OP1dB,
- ⅡP3,
- SiGe HBT
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References
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