J. Semicond. > 2014, Volume 35 > Issue 4 > 045004
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SEMICONDUCTOR INTEGRATED CIRCUITS

A 83 GHz InP DHBT static frequency divider

Youtao Zhang1, 2, 3, , Xiaopeng Li2, 3, Min Zhang2, 3, Wei Cheng1, 2 and Xinyu Chen2, 3

+ Author Affiliations

 Corresponding author: Zhang Youtao, Email:g.youtao@gbdz.net

DOI: 10.1088/1674-4926/35/4/045004

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Abstract: A static frequency divider is presented using 0.7 μm InP DHBTs with 280 GHz 1ft/fmax. The divider is based on ECL master-slave D-flip-flop topology with 30 HBTs and 20 resistors with a chip size 0.62×0.65 mm2. The circuits use peaking inductance as a part of the loads to maximize the highest clock rate. Momentum simulation is used to accurately characterize the effect of the clock feedback lines at the W band. Test results show that the divider can operate from 1 GHz up to 83 GHz. Its phase noise is 139 dBc/Hz with 100 kHz offset. The power dissipation of divider core is 350 mW.

Key words: high-speed, static frequency divider, InP DHBT



[1]
Trotta S, Knapp H, Meister T, et al. 110-GHz, static frequency divider in SiGe bipolar technology. IEEE Compound Semiconductor IC Symposium, 2005:291 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1576599
[2]
Urteaga M, Pierson R, Rowell P, et al. Advanced InP DHBT process for high speed LSI circuits. IEEE Indium Phosphide and Related Materials, 2008:1 http://ieeexplore.ieee.org/document/4703058/
[3]
Monier C, Scott D, D'Amore M, et al. High-speed InP HBT technology for advanced mixed signal and digital applications. IEEE IEDM Digest, 2007:671 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4419033
[4]
D'Amore M, Monier C, Lin S, et al. A 0.25μm InP DHBT 200 GHz+static frequency divider. IEEE J Solid-State Circuits, 2010, 45(10):1992 doi: 10.1109/JSSC.2010.2058171
[5]
He G, Howard J, Le M, et al. Self-aligned InP DHBT with ft and fmax over 300 GHz in a new manufacturable technology. IEEE Electron Device Lett, 2004, 25(8):520 doi: 10.1109/LED.2004.832528
[6]
Griffith Z, Urteaga M, Pieraon R, et al. A 204.8 GHz static divide-by-8 frequency divider in 250 nm InP HBT. IEEE Symposium on Compound Semiconductor Integrated Circuits. 2010:1 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5619684&searchWithin%3Dp_Authors%3A.QT.Rodwell%2C+M.+J.+W..QT.
[7]
Zhao Yan, Cheng Wei, Wang Yuan, et al. A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280 GHz. International Conference on Precision Mechanical Instruments and Measurement Technology, 2013:3665 http://www.scientific.net/AMM.347-350.1673
[8]
Su Yongbo, Jin Zhi, Cheng Wei, et al. An InGaAs/InP 40 GHz CML static frequency divider. Journal of Semiconductors, 2011, 32(3):035008 doi: 10.1088/1674-4926/32/3/035008
Fig. 1.  $H_{21}$ and $U$ of the DHBT with emitter area of 0.7 $\times$ 10 $\mu $m$^{2}$.

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Fig. 2.  Block Diagram of the proposed static frequency divider.

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Fig. 3.  Input bias circuit.

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Fig. 4.  Divider core circuit.

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Fig. 5.  Divider core layout.

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Fig. 6.  Photo of the static divider.

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Fig. 7.  Input sensitivity of the divider.

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Fig. 8.  Divider output, 1 GHz input.

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Fig. 9.  Divider output, 83.6 GHz input.

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Fig. 10.  Divider output phase noise, 7 GHz input.

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Table 1.   Comparison with recently reported InP HBT static frequency divider.
[1]
Trotta S, Knapp H, Meister T, et al. 110-GHz, static frequency divider in SiGe bipolar technology. IEEE Compound Semiconductor IC Symposium, 2005:291 http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1576599
[2]
Urteaga M, Pierson R, Rowell P, et al. Advanced InP DHBT process for high speed LSI circuits. IEEE Indium Phosphide and Related Materials, 2008:1 http://ieeexplore.ieee.org/document/4703058/
[3]
Monier C, Scott D, D'Amore M, et al. High-speed InP HBT technology for advanced mixed signal and digital applications. IEEE IEDM Digest, 2007:671 http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4419033
[4]
D'Amore M, Monier C, Lin S, et al. A 0.25μm InP DHBT 200 GHz+static frequency divider. IEEE J Solid-State Circuits, 2010, 45(10):1992 doi: 10.1109/JSSC.2010.2058171
[5]
He G, Howard J, Le M, et al. Self-aligned InP DHBT with ft and fmax over 300 GHz in a new manufacturable technology. IEEE Electron Device Lett, 2004, 25(8):520 doi: 10.1109/LED.2004.832528
[6]
Griffith Z, Urteaga M, Pieraon R, et al. A 204.8 GHz static divide-by-8 frequency divider in 250 nm InP HBT. IEEE Symposium on Compound Semiconductor Integrated Circuits. 2010:1 http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=5619684&searchWithin%3Dp_Authors%3A.QT.Rodwell%2C+M.+J.+W..QT.
[7]
Zhao Yan, Cheng Wei, Wang Yuan, et al. A submicron InGaAs/InP double heterojunction bipolar transistor with ft and fmax of 280 GHz. International Conference on Precision Mechanical Instruments and Measurement Technology, 2013:3665 http://www.scientific.net/AMM.347-350.1673
[8]
Su Yongbo, Jin Zhi, Cheng Wei, et al. An InGaAs/InP 40 GHz CML static frequency divider. Journal of Semiconductors, 2011, 32(3):035008 doi: 10.1088/1674-4926/32/3/035008

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    Received: 27 September 2013 Revised: 20 November 2013 Online: Published: 01 April 2014

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      Article Navigation >  Journal of Semiconductors  > 2014  >  35(4): 045004
      Youtao Zhang, Xiaopeng Li, Min Zhang, Wei Cheng, Xinyu Chen. A 83 GHz InP DHBT static frequency divider[J]. Journal of Semiconductors, 2014, 35(4): 045004. doi: 10.1088/1674-4926/35/4/045004 ****Y T Zhang, X P Li, M Zhang, W Cheng, X Y Chen. A 83 GHz InP DHBT static frequency divider[J]. J. Semicond., 2014, 35(4): 045004. doi: 10.1088/1674-4926/35/4/045004.
      Citation:
      Youtao Zhang, Xiaopeng Li, Min Zhang, Wei Cheng, Xinyu Chen. A 83 GHz InP DHBT static frequency divider[J]. Journal of Semiconductors, 2014, 35(4): 045004. doi: 10.1088/1674-4926/35/4/045004 ****
      Y T Zhang, X P Li, M Zhang, W Cheng, X Y Chen. A 83 GHz InP DHBT static frequency divider[J]. J. Semicond., 2014, 35(4): 045004. doi: 10.1088/1674-4926/35/4/045004.
      shu

      A 83 GHz InP DHBT static frequency divider

      DOI: 10.1088/1674-4926/35/4/045004
      • 1.

        National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China

      • 2.

        Nanjing Electronic Devices Institute, Nanjing 210016, China

      • 3.

        Nanjing Guobo Electronics Co., Ltd, Nanjing 210016, China

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      • Corresponding author: Zhang Youtao, Email:g.youtao@gbdz.net
      • Received Date: 2013-09-27
      • Revised Date: 2013-11-20
      • Published Date: 2014-04-01

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