Fig. 1.
Cross-section of the MNR-LDMOST (n = 3).
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| Citation: |
Jianbing Cheng, Xiaojuan Xia, Tong Jian, Yufeng Guo, Shujuan Yu, Hao Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. Journal of Semiconductors, 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007
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J B Cheng, X J Xia, T Jian, Y F Guo, S J Yu, H Yang. Electric field optimized LDMOST using multiple decrescent and reverse charge regions[J]. J. Semicond., 2014, 35(7): 074007. doi: 10.1088/1674-4926/35/7/074007.
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Electric field optimized LDMOST using multiple decrescent and reverse charge regions
DOI: 10.1088/1674-4926/35/7/074007
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Abstract
A lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribution is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions' lengths. -
References
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