J. Semicond. > 2015, Volume 36 > Issue 10 > 104001
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SEMICONDUCTOR DEVICES

Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

Mingdong Yi1, Ning Zhang1, Linghai Xie1, and Wei Huang1, 2,

+ Author Affiliations

 Corresponding author: Linghai Xie, iamlhxie@njupt.edu.cn; Wei Huang, iamwhuang@njupt.edu.cn

DOI: 10.1088/1674-4926/36/10/104001

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Abstract: We fabricated heterojunction organic field-effect transistors (OFETs) using copper phthalocyanine (CuPc) and hexadecafluorophtholocyaninatocopper (F16CuPc) as hole transport layer and electron transport layer, respectively.Compared with F16CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1×10-3 to 8.7×10-3 cm2/(V·s), but the p-type behavior was not observed.To enhanced the hole injection, we modified the source-drain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved.Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5×10-3 and 3.1×10-3 cm2/(V·s), respectively.

Key words: organic field-effect transistors, heterojunction, ambipolar, contact resistance



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Fig. 1.  Schematic diagram of (a) device I,(b) device II,and (c) device III.

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Fig. 2.  The output characteristics for (a) device II and (b) device I.

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Fig. 3.  The transfer characteristics for (a) device II and (b) device I when $V_{\rm DS}$ is set as 50 V.

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Fig. 4.  (a) Energy diagram of F$_{16}$CuPc and CuPc (a) before and (b) after contact. $E_{\rm vac}$ and $E_{\rm F}$ are the vacuum level and Fermi level,respectively. (c) The charge carrier distribution at the interface of the F$_{16}$CuPc/CuPc heterojunction under zero bias conditions.

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Fig. 5.  The ambipolar electrical characteristics of our heterojunction OFET with MoO$_{3}$ buffer layer. (a) The output characteristics of electron-accumulation mode with varied positive gate voltages from 0 to $+50$ V. (b) The output characteristics of hole-accumulation mode with varied positive gate voltages from 0 to -50 V. (c) The transfer characteristics of ambipolar OFET.

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Fig. 6.  Plots for total resistance $R_{\rm T}$ versus channel length $L$ of the OFETs with the MoO$_{3}$ modified electrodes for various gate voltages.

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Fig. 7.  Schematic of energy level diagram of the materials in the contact region.

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Table 1.   The contact resistances with and without the MoO$_{3}$ layer modification at various gate voltages.

$V_{rm GS}$ (V) $R_{rm c}$ ($upOmega )$ par [bare Au] $R_{rm c}$ ($upOmega )$ par [MoO$_{3}$-modified Au]
$-10$ 1.79 $times $ 10$^{9}$ 1.89 $times $ 10$^{8}$
$-20$ 6.56 $times $ 10$^{8}$ 6.8 $times $ 10$^{7}$
$-30$ 2.61 $times $ 10$^{8}$ 3.15 $times $ 10$^{7}$
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    Received: 09 April 2015 Revised: Online: Published: 01 October 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(10): 104001
      Mingdong Yi, Ning Zhang, Linghai Xie, Wei Huang. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J]. Journal of Semiconductors, 2015, 36(10): 104001. doi: 10.1088/1674-4926/36/10/104001 ****M D Yi, N Zhang, L H Xie, W Huang. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J]. J. Semicond., 2015, 36(10): 104001. doi: 10.1088/1674-4926/36/10/104001.
      Citation:
      Mingdong Yi, Ning Zhang, Linghai Xie, Wei Huang. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J]. Journal of Semiconductors, 2015, 36(10): 104001. doi: 10.1088/1674-4926/36/10/104001 ****
      M D Yi, N Zhang, L H Xie, W Huang. Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer[J]. J. Semicond., 2015, 36(10): 104001. doi: 10.1088/1674-4926/36/10/104001.
      shu

      Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer

      DOI: 10.1088/1674-4926/36/10/104001
      • 1.

        Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China

      • 2.

        Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China

      Funds:

      Project supported by the National Natural Science Foundation of China (Nos.61475074, 61204095).

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