J. Semicond. > 2015, Volume 36 > Issue 2 > 024006
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SEMICONDUCTOR DEVICES

Frequency stability of InP HBT over 0.2 to 220 GHz

Zhijiang Zhou1, 2, Kun Ren1, , Jun Liu1, Wei Cheng2, Haiyan Lu2 and Lingling Sun1

+ Author Affiliations

 Corresponding author: Kun Ren, E-mail: hbrenkun@163.com

DOI: 10.1088/1674-4926/36/2/024006

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Abstract: The frequency stabilities of InP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

Key words: double heterojunction bipolar transistor (DHBT), small-signal model, stability factor



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Fig. 1.  InP HBT equivalent circuit. (a) Cross-section of InP DHBT physical model. (b) Hybrid $\pi$-topology small-signal equivalent circuit.

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Fig. 2.  (Color online) Comparison between simulated versus measured $S$-parameters from 200 MHz to 220 GHz, at $i_{\rm b}$ $=$ 400 $\mu$A, $i_{\rm c}$ $=$ 1.5 V. (a) Imag($S_{11}$) and Imag($S_{22}$). (b) Real($S_{11}$) and Real($S_{22}$). (c) Imag($S_{21}$). (d) Real($S_{21}$).

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Fig. 3.  Stability factor-$K$ versus emitter area

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Fig. 4.  Stability factor-$K$ versus bias $i_{\rm b}$ $=$ 400, 600 and 800 $\mu$A.

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Fig. 5.  Stability factor-$K$ versus capacitor parameters.

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Fig. 6.  Stability factor-$K$ versus resistor parameters.

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Fig. 7.  Stability factor-$K$ curve versus parameter $g_{\rm m}$.

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Table 1.   Extracted model parameter values of an InP DHBT with one emitter finger. The width and length of the emitter finger are 6 $\mu$m and 0.5 $\mu$m, respectively.

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    Received: 27 July 2014 Revised: Online: Published: 01 February 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(2): 024006
      Zhijiang Zhou, Kun Ren, Jun Liu, Wei Cheng, Haiyan Lu, Lingling Sun. Frequency stability of InP HBT over 0.2 to 220 GHz[J]. Journal of Semiconductors, 2015, 36(2): 024006. doi: 10.1088/1674-4926/36/2/024006 ****Z J Zhou, K Ren, J Liu, W Cheng, H Y Lu, L L Sun. Frequency stability of InP HBT over 0.2 to 220 GHz[J]. J. Semicond., 2015, 36(2): 024006. doi: 10.1088/1674-4926/36/2/024006.
      Citation:
      Zhijiang Zhou, Kun Ren, Jun Liu, Wei Cheng, Haiyan Lu, Lingling Sun. Frequency stability of InP HBT over 0.2 to 220 GHz[J]. Journal of Semiconductors, 2015, 36(2): 024006. doi: 10.1088/1674-4926/36/2/024006 ****
      Z J Zhou, K Ren, J Liu, W Cheng, H Y Lu, L L Sun. Frequency stability of InP HBT over 0.2 to 220 GHz[J]. J. Semicond., 2015, 36(2): 024006. doi: 10.1088/1674-4926/36/2/024006.
      shu

      Frequency stability of InP HBT over 0.2 to 220 GHz

      DOI: 10.1088/1674-4926/36/2/024006
      • 1.

        The Key Laboratory for RF Circuits and Systems of Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China

      • 2.

        Science and Technology on Monolithic Integrated Circuit and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

      Funds:

      Project supported by the National Natural Science Foundation of China (No. 61331006).

      More Information
      • Corresponding author: E-mail: hbrenkun@163.com
      • Received Date: 2014-07-27
      • Accepted Date: 2014-09-06
      • Published Date: 2015-01-25

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