J. Semicond. > 2015, Volume 36 > Issue 2 > 024008
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SEMICONDUCTOR DEVICES

Novel 700 V high-voltage SOI LDMOS structure with folded drift region

Qi Li1, 2, Haiou Li1, , Jianghui Zhai1 and Ning Tang1

+ Author Affiliations

 Corresponding author: Haiou Li, E-mail: lqmoon@guet.edu.cn

DOI: 10.1088/1674-4926/36/2/024008

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Abstract: A new high-voltage LDMOS with folded drift region (FDR LDMOS) is proposed. The drift region is folded by introducing the interdigital oxide layer in the Si active layer, the result of which is that the effective length of the drift region is increased significantly. The breakdown characteristic has been improved by the shielding effect of the electric field from the holes accumulated in the surface of the device and the buried oxide layer. The numerical results indicate that the breakdown voltage of 700 V is obtained in the proposed device in comparison to 300 V of conventional LDMOS, while maintaining low on-resistance.

Key words: folded drift region, breakdown voltage, interdigital oxide layer, electric field modulation



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Fig. 1.  (a) Cross-section of FDR LDMOS and (b) processes of interdigital oxide trenches.

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Fig. 2.  (a) Potential distribution of FDR LDMOS, (b) potential distribution of conventional LDMOS, (c) holes concentration profile of FDR LDMOS, and (d) breakdown characteristics of both devices.

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Fig. 3.  Breakdown voltage as a function of $N_{\rm d}$ with (a) different $D$ and (b) different $W$.

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Fig. 4.  Breakdown voltage as a function of $N_{\rm d}$ with different (a) $L_{1}$ and (b) $L_{\rm d}$.

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Fig. 5.  Breakdown voltage as a function of (a) $t_{\rm ox}$ and (b) $t_{\rm d}$.

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Fig. 6.  (a) Current flow line distribution at on-state. (b) Equipotential distribution at on-state. (c) Output characteristic curve. (d) On-resistance as a function of $N_{\rm d}$.

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    Received: 22 July 2014 Revised: Online: Published: 01 February 2015

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      Article Navigation >  Journal of Semiconductors  > 2015  >  36(2): 024008
      Qi Li, Haiou Li, Jianghui Zhai, Ning Tang. Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J]. Journal of Semiconductors, 2015, 36(2): 024008. doi: 10.1088/1674-4926/36/2/024008 ****Q Li, H O Li, J H Zhai, N Tang. Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J]. J. Semicond., 2015, 36(2): 024008. doi: 10.1088/1674-4926/36/2/024008.
      Citation:
      Qi Li, Haiou Li, Jianghui Zhai, Ning Tang. Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J]. Journal of Semiconductors, 2015, 36(2): 024008. doi: 10.1088/1674-4926/36/2/024008 ****
      Q Li, H O Li, J H Zhai, N Tang. Novel 700 V high-voltage SOI LDMOS structure with folded drift region[J]. J. Semicond., 2015, 36(2): 024008. doi: 10.1088/1674-4926/36/2/024008.
      shu

      Novel 700 V high-voltage SOI LDMOS structure with folded drift region

      DOI: 10.1088/1674-4926/36/2/024008
      • 1.

        Guangxi Experiment Center of Information Science, Guilin University of Electronic Technology, Guilin 541004, China

      • 2.

        State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

      Funds:

      Project supported by the State Key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), the Guangxi Department of Education (No. 201202ZD041), the China Postdoctoral Science Foundation (Nos. 2012M521127, 2013T60566), and the National Natural Science Foundation of China (Nos. 61361011, 61274077, 61464003).

      More Information
      • Corresponding author: E-mail: lqmoon@guet.edu.cn
      • Received Date: 2014-07-22
      • Accepted Date: 2014-09-17
      • Published Date: 2015-01-25

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