Fig. 1.
The photograph of ellipsometry.
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| Citation: |
Yanyue Li, Xiaochuan Deng, Yunfeng Liu, Yanli Zhao, Chengzhan Li, Xixi Chen, Bo Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. Journal of Semiconductors, 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003
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Y Y Li, X C Deng, Y F Liu, Y L Zhao, C Z Li, X X Chen, B Zhang. Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation[J]. J. Semicond., 2015, 36(9): 094003. doi: 10.1088/1674-4926/36/9/094003.
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Effect of post oxidation annealing in nitric oxide on interface properties of 4H-SiC/SiO2 after high temperature oxidation
DOI: 10.1088/1674-4926/36/9/094003
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Abstract
The interface properties of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with post-oxidation annealing (POA) in nitric oxide (NO) ambient after high temperature (1300 ℃) oxidation have been investigated using capacitance-voltage (C-V) measurements. The experimental results show that the interface states density can be obviously decreased by the POA in NO ambient, and further reduced with increasing POA temperature and time. In the meantime interface state density and oxidation time could be lowered at higher thermal oxidation temperature, which results in the better oxide MOS characteristics and lower production costs. POA temperature and time dependence of 4H-SiC MOS interface are also discussed in detail.-
Keywords:
- C-V characteristics,
- 4H-SiC MOS,
- post-oxidation annealing,
- SiC/SiO2
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References
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