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Block diagram of the LNA module.
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| Citation: |
Hua Zhao, Hongfei Yao, Peng Ding, Yongbo Su, Xiaoxi Ning, Zhi Jin, Xinyu Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. Journal of Semiconductors, 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001
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H Zhao, H F Yao, P Ding, Y B Su, X X Ning, Z Jin, X Y Liu. A full W-band low noise amplifier module for millimeter-wave applications[J]. J. Semicond., 2015, 36(9): 095001. doi: 10.1088/1674-4926/36/9/095001.
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A full W-band low noise amplifier module for millimeter-wave applications
DOI: 10.1088/1674-4926/36/9/095001
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Abstract
A full W-band low noise amplifier (LNA) module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed,optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification,two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz,and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band (below 3 dB from 89 to 95 GHz) at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain,low noise,and low DC power consumption. -
References
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