Citation: |
Weihao Liu, Lu Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. Journal of Semiconductors, 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001
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W H Liu, L Huang. A low power CMOS VCO using inductive-biasing with high performance FoM[J]. J. Semicond., 2016, 37(4): 045001. doi: 10.1088/1674-4926/37/4/045001.
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A low power CMOS VCO using inductive-biasing with high performance FoM
DOI: 10.1088/1674-4926/37/4/045001
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Abstract
A novel voltage-controlled oscillator (VCO) topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using time-varying phase noise theory derives closed-form symbolic formulas for the 1/f2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 μm CMOS technology. Working under a 0.3 V supply voltage with 1.2 mW power consumption, the measured phase noise of the VCO is -119.4 dBc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an FoM of 192.5 dBc/Hz. -
References
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