Fig. 1.
$C$-$V$ characteristic and EOT extraction of MOS capacitor sample.
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| Citation: |
Hao Xu, Hong Yang, Yanrong Wang, Wenwu Wang, Guangxing Wan, Shangqing Ren, Weichun Luo, Luwei Qi, Chao Zhao, Dapeng Chen, Xinyu Liu, Tianchun Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. Journal of Semiconductors, 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005
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H Xu, H Yang, Y R Wang, W W Wang, G X Wan, S Q Ren, W C Luo, L W Qi, C Zhao, D P Chen, X Y Liu, T C Ye. Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks[J]. J. Semicond., 2016, 37(5): 054005. doi: 10.1088/1674-4926/37/5/054005.
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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
DOI: 10.1088/1674-4926/37/5/054005
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Abstract
The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process. -
References
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