J. Semicond. > 2017, Volume 38 > Issue 11 > 114005
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SEMICONDUCTOR DEVICES

1.06 μm high-power InGaAs/GaAsP quantum well lasers

Haili Wang, Li Zhong, Jida Hou, Suping Liu and Xiaoyu Ma

+ Author Affiliations

 Corresponding author: Li Zhong, Email: zhongli@semi.ac.cn

DOI: 10.1088/1674-4926/38/11/114005

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Abstract: The high power and low internal loss 1.06 μm InGaAs/GaAsP quantum well lasers with asymmetric waveguide structure were designed and fabricated. For a 4000 μm cavity length and 100 μm stripe width device, the maximum output power and conversion efficiency of the device are 7.13 W and 56.4%, respectively. The cavity length dependence of the threshold current density and conversion efficiency have been investigated theoretically and experimentally; the laser diode with 4000 μm cavity length shows better characteristics than that with 3000 and 4500 μm cavity length: the threshold current density is 132.5 A/cm2, the slope efficiency of 1.00 W/A and the junction temperature of 15.62 K were achieved.

Key words: semiconductor laser, high power, asymmetric waveguide, cavity length



[1]
Chung H S, Lee M S, Lee D, et al. Low noise, high efficiency L-band EDFA with 980 nm pumping. Electron Lett, 1999, 35: 1099 doi: 10.1049/el:19990750
[2]
Guo W T, Tan M Q, Jiao J. 980 nm fiber grating external cavity semiconductor lasers with high side mode suppression ratio and high stable frequency. J Semicond, 2014, 35: 84007 doi: 10.1088/1674-4926/35/8/084007
[3]
Dong Z, Wang C L, Jing H Q, et al. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current. J Semicond, 2013, 34: 114011 doi: 10.1088/1674-4926/34/11/114011
[4]
Bettiati M, Laruelle F, Cargemel V, et al. High brightness single-mode 1060-nm diode lasers for demanding industrial applications. The European Conference on Lasers and Electro-Optics, 2007: CB_19
[5]
Yuda M, Temmyo J, Sasaki T, et al. High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers. Electron Lett, 2003, 39(8): 1
[6]
Wan C T, Su Y K, Yu H C, et al. Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP–GaAs superlattices as strain-compensated layer. IEEE Photonics Technol Lett, 2009, 21(19): 1474 doi: 10.1109/LPT.2009.2028654
[7]
Nguyen H K, Coleman S, Visovsky N J, et al. Reliable high-power 1060 nm DBR lasers for second-harmonic generation. Electron Lett, 2007, 43(13): 716 doi: 10.1049/el:20070694
[8]
Mohrdiek S, Troger J, Pliska T, et al. Performance and reliability of pulsed 1060 nm laser modules. Lasers and Applications in Science and Engineering, 2008: 687320
[9]
Miah M J, Kettler T, Posilovic K, et al. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area. Appl Phys Lett, 2014, 105(15): 151105 doi: 10.1063/1.4898010
[10]
Ren Y X, Chen H T, Zhang S Z, et al. 1.06 μm high power CW semiconductor lasers. Nanoelectronic Device & Technology, 2009, 46(4): 209
[11]
Li T, Hao E J, Zhang Y. An asymmetric heterostructure waveguide structure for semiconductor lasers. J Infrared Millim Waves, 2015, 34(5): 613
[12]
Tan S Y, Zhai T, Zhang R K, et al. Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers. Chin Phys B, 2015, 24(6): 064211 doi: 10.1088/1674-1056/24/6/064211
[13]
Li T, Hao E J, Li Z J, et al. Optimization of waveguide structure for high power 1060 nm diode laser. J Infrared Millim Waves, 2012, 31(3): 226 doi: 10.3724/SP.J.1010.2012.00226
[14]
Zhang Y, Yang R X. An influence of cavity length on single emitter semiconductor laser performance. Semicond Device, 2013, 12: 6
[15]
Li Z H, Li M, Wang L, et al. Effect of cavity length on Jth and ηd of InGaAsP/InGaP/GaAs SQW lasers. Semicondr Optoelectron, 2002, 23: 90
[16]
Pikhtin N A, Slipchenko S O, Sokolova Z N, et al. Internal optical loss in semiconductor lasers. Semiconductors, 2004, 38(3): 360 doi: 10.1134/1.1682615
[17]
Nabiev R F, Vail E C, Chang-Hasnain C J. Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes. IEEE J Sel Topics Quantum Electron, 1995, 1(2): 234 doi: 10.1109/2944.401202
[18]
Fye D. An optimization procedure for the selection of diode laser facet coatings. IEEE J Quantum Electron, 1981, 17(9): 1950 doi: 10.1109/JQE.1981.1071351
[19]
Koren U, Miller B I, Su Y K, et al. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser. Appl Phys Lett, 1987, 51(21): 1744 doi: 10.1063/1.98510
Fig. 1.  (Color online) Schematic diagram of 1.06 μm laser with asymmetric waveguide structure.

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Fig. 2.  (Color online) Refractive index and wave intensity distribution of asymmetric waveguide structure.

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Fig. 3.  The calculated (a) threshold current density, (b) external differential quantum efficiency, and (c) series resistance versus cavity length for laser diode.

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Fig. 4.  Reciprocal external differential quantum efficiency versus cavity length.

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Fig. 5.  (Color online) Dependence of I–L characteristics on cavity lengths of 3000, 4000, and 4500 μm.

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Fig. 6.  (Color online) (a) Lasing spectrum of the laser at current of 3 A. (b) CW output characteristics of semiconductor laser with a 100 μm stripe width and 4000 μm cavity length at room temperature. Insert: Packaging structure of the device.

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Table 1.   Output parameters of the devices with different cavity length.

L (μm) Jth (A/cm2) Es (W/A) Ep (%) Rd (Ω)
3000 150.0 1.00 56.8 0.090
4000 132.5 1.00 56.4 0.086
4500 128.9 0.93 52.4 0.082
DownLoad: CSV

Table 2.   Junction temperatures and thermal resistances measured by wavelength-shift methods.

L(μm) λ1 (nm) λ2 (nm) ∆T (K) Rth (K/W)
3000 1057.2 1063.5 19.30 7.31
4000 1059.2 1064.3 15.62 6.13
4500 1059.3 1063.7 13.48 4.94
DownLoad: CSV
[1]
Chung H S, Lee M S, Lee D, et al. Low noise, high efficiency L-band EDFA with 980 nm pumping. Electron Lett, 1999, 35: 1099 doi: 10.1049/el:19990750
[2]
Guo W T, Tan M Q, Jiao J. 980 nm fiber grating external cavity semiconductor lasers with high side mode suppression ratio and high stable frequency. J Semicond, 2014, 35: 84007 doi: 10.1088/1674-4926/35/8/084007
[3]
Dong Z, Wang C L, Jing H Q, et al. High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current. J Semicond, 2013, 34: 114011 doi: 10.1088/1674-4926/34/11/114011
[4]
Bettiati M, Laruelle F, Cargemel V, et al. High brightness single-mode 1060-nm diode lasers for demanding industrial applications. The European Conference on Lasers and Electro-Optics, 2007: CB_19
[5]
Yuda M, Temmyo J, Sasaki T, et al. High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers. Electron Lett, 2003, 39(8): 1
[6]
Wan C T, Su Y K, Yu H C, et al. Low transparency current density and low internal loss of 1060-nm InGaAs laser with GaAsP–GaAs superlattices as strain-compensated layer. IEEE Photonics Technol Lett, 2009, 21(19): 1474 doi: 10.1109/LPT.2009.2028654
[7]
Nguyen H K, Coleman S, Visovsky N J, et al. Reliable high-power 1060 nm DBR lasers for second-harmonic generation. Electron Lett, 2007, 43(13): 716 doi: 10.1049/el:20070694
[8]
Mohrdiek S, Troger J, Pliska T, et al. Performance and reliability of pulsed 1060 nm laser modules. Lasers and Applications in Science and Engineering, 2008: 687320
[9]
Miah M J, Kettler T, Posilovic K, et al. 1.9 W continuous-wave single transverse mode emission from 1060 nm edge-emitting lasers with vertically extended lasing area. Appl Phys Lett, 2014, 105(15): 151105 doi: 10.1063/1.4898010
[10]
Ren Y X, Chen H T, Zhang S Z, et al. 1.06 μm high power CW semiconductor lasers. Nanoelectronic Device & Technology, 2009, 46(4): 209
[11]
Li T, Hao E J, Zhang Y. An asymmetric heterostructure waveguide structure for semiconductor lasers. J Infrared Millim Waves, 2015, 34(5): 613
[12]
Tan S Y, Zhai T, Zhang R K, et al. Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers. Chin Phys B, 2015, 24(6): 064211 doi: 10.1088/1674-1056/24/6/064211
[13]
Li T, Hao E J, Li Z J, et al. Optimization of waveguide structure for high power 1060 nm diode laser. J Infrared Millim Waves, 2012, 31(3): 226 doi: 10.3724/SP.J.1010.2012.00226
[14]
Zhang Y, Yang R X. An influence of cavity length on single emitter semiconductor laser performance. Semicond Device, 2013, 12: 6
[15]
Li Z H, Li M, Wang L, et al. Effect of cavity length on Jth and ηd of InGaAsP/InGaP/GaAs SQW lasers. Semicondr Optoelectron, 2002, 23: 90
[16]
Pikhtin N A, Slipchenko S O, Sokolova Z N, et al. Internal optical loss in semiconductor lasers. Semiconductors, 2004, 38(3): 360 doi: 10.1134/1.1682615
[17]
Nabiev R F, Vail E C, Chang-Hasnain C J. Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes. IEEE J Sel Topics Quantum Electron, 1995, 1(2): 234 doi: 10.1109/2944.401202
[18]
Fye D. An optimization procedure for the selection of diode laser facet coatings. IEEE J Quantum Electron, 1981, 17(9): 1950 doi: 10.1109/JQE.1981.1071351
[19]
Koren U, Miller B I, Su Y K, et al. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser. Appl Phys Lett, 1987, 51(21): 1744 doi: 10.1063/1.98510

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    Received: 23 January 2017 Revised: 24 April 2017 Online: Uncorrected proof: 30 October 2017Accepted Manuscript: 13 November 2017Published: 01 November 2017

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      Article Navigation >  Journal of Semiconductors  > 2017  >  38(11): 114005
      Haili Wang, Li Zhong, Jida Hou, Suping Liu, Xiaoyu Ma. 1.06 μm high-power InGaAs/GaAsP quantum well lasers[J]. Journal of Semiconductors, 2017, 38(11): 114005. doi: 10.1088/1674-4926/38/11/114005 ****H L Wang, L Zhong, J D Hou, S P Liu, X Y Ma. 1.06 μm high-power InGaAs/GaAsP quantum well lasers[J]. J. Semicond., 2017, 38(11): 114005. doi: 10.1088/1674-4926/38/11/114005.
      Citation:
      Haili Wang, Li Zhong, Jida Hou, Suping Liu, Xiaoyu Ma. 1.06 μm high-power InGaAs/GaAsP quantum well lasers[J]. Journal of Semiconductors, 2017, 38(11): 114005. doi: 10.1088/1674-4926/38/11/114005 ****
      H L Wang, L Zhong, J D Hou, S P Liu, X Y Ma. 1.06 μm high-power InGaAs/GaAsP quantum well lasers[J]. J. Semicond., 2017, 38(11): 114005. doi: 10.1088/1674-4926/38/11/114005.
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      1.06 μm high-power InGaAs/GaAsP quantum well lasers

      DOI: 10.1088/1674-4926/38/11/114005

      • National Engineering Research Center for Optoelectronic Devices, Institute of semiconductors, Chinese Academy of Sciences, Beijing 100083, China

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      • Corresponding author: Email: zhongli@semi.ac.cn
      • Received Date: 2017-01-23
      • Revised Date: 2017-04-24
      • Published Date: 2017-11-01

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