Asymmetric quantum well broadband thyristor laser

Zhen Liu; Jiaqi Wang; Hongyan Yu; Xuliang Zhou; Weixi Chen; Zhaosong Li; Wei Wang; Ying Ding; Jiaoqing Pan

doi:10.1088/1674-4926/38/11/114006

J. Semicond. > 2017, Volume 38 > Issue 11 > 114006

SEMICONDUCTOR DEVICES

Asymmetric quantum well broadband thyristor laser

Zhen Liu^{1, 2, 3}, Jiaqi Wang^{1, 2, 3}, Hongyan Yu^{1, 2, 3}, Xuliang Zhou^{1, 2, 3}, Weixi Chen⁴, Zhaosong Li^{1, 2, 3}, Wei Wang^{1, 2, 3}, Ying Ding⁵ and Jiaoqing Pan^{1, 2, 3,}

+ Author Affiliations

Corresponding author: Jiaoqing Pan, jqpan@semi.ac.cn

DOI: 10.1088/1674-4926/38/11/114006

Abstract: A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry–Perot (FP) ridge-waveguide laser shows an S-shape I−V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ₋₁₀ dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure.

Key words: broadband laser, asymmetric quantum well, thyristor

References

[1]	Shidlovski V R, Wei J. Superluminescent diodes for optical coherence tomography. Proc SPIE, 2002, 4648: 139 doi: 10.1117/12.462650
[2]	Maeda Y, Yamada M, Endo T, et al. 1700 nm ASE light source and its application to mid-infrared spectroscopy. Optoelectronics and Communication Conf and Australian Conf on Opt Fibre Technol, 2014
[3]	Heo D, Lee J S, Yun I K, et al. Polarization-independent, high-power, and angle-flared superluminescent diode for WDM-PON applications. Proc IEEE LEOS Annual Meeting Conf, 2005
[4]	Shin D J, Keh Y C, Kwon J W, et al. Low-cost WDM-PON with colorless bidirectional transceivers. J Lightwave Technol, 2006, 24(1): 158 doi: 10.1109/JLT.2005.861122
[5]	Gmachl C, Sivco D L, Colombelli R, et al. Ultra-broadband semiconductor laser. Nature, 2002, 415: 883 doi: 10.1038/415883a
[6]	Djie H S, Ooi B S , Fang X M, et al. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Opt Lett, 2007, 32: 44 doi: 10.1364/OL.32.000044
[7]	Djie H S, Tan C L, Ooi B S, et al. Ultrabroad stimulated emission from quantum-dash laser. Appl Phys Lett, 2007, 91: 111116 doi: 10.1063/1.2784969
[8]	Wang H, Zhou X, Yu H, et al. Ultrabroad stimulated emission from quantum well laser. Appl Phys Lett, 2014, 104: 251101 doi: 10.1063/1.4885366
[9]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm. J Appl Phys, 2014, 116: 084503 doi: 10.1063/1.4893956
[10]	Lin C F, Lee B L, Lin P C. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells. IEEE Photonics Technol Lett, 1996, 8: 1456 doi: 10.1109/68.541548
[11]	Kwon O K, Kim K, Sim E D, et al. Asymmetric multiple-quantum-well laser diodes with wide and flat gain. Opt Lett, 2003, 28: 2189 doi: 10.1364/OL.28.002189
[12]	Khan M Z M, Ng T K, Lee C S, et al. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission. Appl Phys Lett, 2013, 102: 091102 doi: 10.1063/1.4794407
[13]	Podoskin A A, Soboleva O S, Zakharov M S, et al. Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures. Semicond Sci Technol, 2015, 30: 125011 doi: 10.1088/0268-1242/30/12/125011
[14]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. High-power laser thyristors with high injection efficiency (λ=890-910 nm). IEEE Photonics Technol Lett, 2015, 27: 307
[15]	Bennett B R, Soref R A, Del Alamo J A. Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP. IEEE J Quantum Electron, 1990, 26: 113 doi: 10.1109/3.44924
[16]	Chen P A, Chang C Y, Juang C. Carrier-Induced Energy Shift in GaAs/AlGaAs Multiple Quantum Well Laser Diodes. IEEE J Quantum Electron, 1993, 29: 2607 doi: 10.1109/3.250382

Fig. 1. Scanning electron microscope photograph of the ridge waveguide structure of the AQW laser.

DownLoad: Full-Size Img PowerPoint

Fig. 2. (Color online) (a) Calculated energy states of InGaAs/GaAs AQW at equilibrium simulated by commercial software Crosslight (Crosslight Software, Inc., Canada). (b) Room temperature PL spectrum of InGaAs/GaAs AQW.

DownLoad: Full-Size Img PowerPoint

Fig. 3. (Color online)(a) Nonlinear forward S-shape I−V characteristic of the AQW laser. (b) A similar measurement was taken with a homemade XJ4810 oscilloscope (curve tracer).

DownLoad: Full-Size Img PowerPoint

Fig. 4. (Color online)(a) The L−I curve of the AQW laser testing at 15 °C. (b) L−I curves tested near the threshold under varied temperatures from 10 °C to 45 °C.

DownLoad: Full-Size Img PowerPoint

Fig. 5. (Color online) (a) Lasing spectra in a logarithmic scale under various current levels from 100 to 700 mA at 25 °C. (b) The corresponding spectral bandwidth measured at Δ ₋₁₀ dB levels and center wavelength as a function of current.

DownLoad: Full-Size Img PowerPoint

Table 1. The structure of the AQW broadband thyristor laser.

Material	Thickness (nm)	Doping concentration (cm⁻³)
GaAs	300	C-1×10²⁰
Al_0.47Ga_0.53As	1800	C-1×10¹⁸
Al_0.47Ga_0.53As	35	Si -1×10¹⁹
GaAs	10	Si -1×10¹⁹
GaAs	8
Al_0.47Ga_0.53As	35
Al_0.26–0.47Ga_0.74–0.53As	55
GaAs	80
InGaAs	15
GaAs	15
InGaAs	5
GaAs	400
Al_0.26Ga_0.74As	100
Al_0.47Ga_0.53As	1800	Si-1×10¹⁹
GaAs buffer	400	Si-1×10¹⁹

DownLoad: CSV

[1]	Shidlovski V R, Wei J. Superluminescent diodes for optical coherence tomography. Proc SPIE, 2002, 4648: 139 doi: 10.1117/12.462650
[2]	Maeda Y, Yamada M, Endo T, et al. 1700 nm ASE light source and its application to mid-infrared spectroscopy. Optoelectronics and Communication Conf and Australian Conf on Opt Fibre Technol, 2014
[3]	Heo D, Lee J S, Yun I K, et al. Polarization-independent, high-power, and angle-flared superluminescent diode for WDM-PON applications. Proc IEEE LEOS Annual Meeting Conf, 2005
[4]	Shin D J, Keh Y C, Kwon J W, et al. Low-cost WDM-PON with colorless bidirectional transceivers. J Lightwave Technol, 2006, 24(1): 158 doi: 10.1109/JLT.2005.861122
[5]	Gmachl C, Sivco D L, Colombelli R, et al. Ultra-broadband semiconductor laser. Nature, 2002, 415: 883 doi: 10.1038/415883a
[6]	Djie H S, Ooi B S , Fang X M, et al. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Opt Lett, 2007, 32: 44 doi: 10.1364/OL.32.000044
[7]	Djie H S, Tan C L, Ooi B S, et al. Ultrabroad stimulated emission from quantum-dash laser. Appl Phys Lett, 2007, 91: 111116 doi: 10.1063/1.2784969
[8]	Wang H, Zhou X, Yu H, et al. Ultrabroad stimulated emission from quantum well laser. Appl Phys Lett, 2014, 104: 251101 doi: 10.1063/1.4885366
[9]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm. J Appl Phys, 2014, 116: 084503 doi: 10.1063/1.4893956
[10]	Lin C F, Lee B L, Lin P C. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells. IEEE Photonics Technol Lett, 1996, 8: 1456 doi: 10.1109/68.541548
[11]	Kwon O K, Kim K, Sim E D, et al. Asymmetric multiple-quantum-well laser diodes with wide and flat gain. Opt Lett, 2003, 28: 2189 doi: 10.1364/OL.28.002189
[12]	Khan M Z M, Ng T K, Lee C S, et al. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission. Appl Phys Lett, 2013, 102: 091102 doi: 10.1063/1.4794407
[13]	Podoskin A A, Soboleva O S, Zakharov M S, et al. Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures. Semicond Sci Technol, 2015, 30: 125011 doi: 10.1088/0268-1242/30/12/125011
[14]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. High-power laser thyristors with high injection efficiency (λ=890-910 nm). IEEE Photonics Technol Lett, 2015, 27: 307
[15]	Bennett B R, Soref R A, Del Alamo J A. Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP. IEEE J Quantum Electron, 1990, 26: 113 doi: 10.1109/3.44924
[16]	Chen P A, Chang C Y, Juang C. Carrier-Induced Energy Shift in GaAs/AlGaAs Multiple Quantum Well Laser Diodes. IEEE J Quantum Electron, 1993, 29: 2607 doi: 10.1109/3.250382

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Received: 13 March 2017 Revised: 16 May 2017 Online: Uncorrected proof: 30 October 2017Accepted Manuscript: 13 November 2017Published: 01 November 2017

Article Navigation > Journal of Semiconductors > 2017 > 38(11): 114006

Zhen Liu, Jiaqi Wang, Hongyan Yu, Xuliang Zhou, Weixi Chen, Zhaosong Li, Wei Wang, Ying Ding, Jiaoqing Pan. Asymmetric quantum well broadband thyristor laser[J]. Journal of Semiconductors, 2017, 38(11): 114006. doi: 10.1088/1674-4926/38/11/114006 ****Z Liu, J Q Wang, H Y Yu, X L Zhou, W X Chen, Z S Li, W Wang, Y Ding, J Q Pan. Asymmetric quantum well broadband thyristor laser[J]. J. Semicond., 2017, 38(11): 114006. doi: 10.1088/1674-4926/38/11/114006.

Citation:

Zhen Liu, Jiaqi Wang, Hongyan Yu, Xuliang Zhou, Weixi Chen, Zhaosong Li, Wei Wang, Ying Ding, Jiaoqing Pan. Asymmetric quantum well broadband thyristor laser[J]. Journal of Semiconductors, 2017, 38(11): 114006. doi: 10.1088/1674-4926/38/11/114006 ****

Z Liu, J Q Wang, H Y Yu, X L Zhou, W X Chen, Z S Li, W Wang, Y Ding, J Q Pan. Asymmetric quantum well broadband thyristor laser[J]. J. Semicond., 2017, 38(11): 114006. doi: 10.1088/1674-4926/38/11/114006.

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Asymmetric quantum well broadband thyristor laser

DOI: 10.1088/1674-4926/38/11/114006

Zhen Liu^1,2,3,
Jiaqi Wang^1,2,3,
Hongyan Yu^1,2,3,
Xuliang Zhou^1,2,3,
Weixi Chen⁴,
Zhaosong Li^1,2,3,
Wei Wang^1,2,3,
Ying Ding⁵,
Jiaoqing Pan^1,2,3,

1.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China
2.
College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
4.
State Key Laboratory for Macroscopic Physics and School of Physics, Peking University, Beijing 100871, China
5.
School of Engineering, University of Glasgow, Glasgow G12 8LT, UK

Funds:

Project supported by the National Natural Science Foundation of China (Nos. 61604144, 61504137). Zhen Liu and Jiaqi Wang contributed equally to this work.

More Information

Corresponding author: jqpan@semi.ac.cn
Received Date: 2017-03-13
Revised Date: 2017-05-16
Published Date: 2017-11-01

Abstract

Abstract

A broadband thyristor laser based on InGaAs/GaAs asymmetric quantum well (AQW) is fabricated by metal organic chemical vapor deposition (MOCVD). The 3-μm-wide Fabry–Perot (FP) ridge-waveguide laser shows an S-shape I−V characteristic and exhibits a flat-topped broadband optical spectrum coverage of ~27 nm (Δ₋₁₀ dB) at a center wavelength of ~1090 nm with a total output power of 137 mW under pulsed operation. The AQW structure was carefully designed to establish multiple energy states within, in order to broaden the gain spectrum. An obvious blue shift emission, which is not generally acquired in QW laser diodes, is observed in the broadening process of the optical spectrum as the injection current increases. This blue shift spectrum broadening is considered to result from the prominent band-filling effect enhanced by the multiple energy states of the AQW structure, as well as the optical feedback effect contributed by the thyristor laser structure.
- broadband laser,
- asymmetric quantum well,
- thyristor

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References(16)

References

[1]	Shidlovski V R, Wei J. Superluminescent diodes for optical coherence tomography. Proc SPIE, 2002, 4648: 139 doi: 10.1117/12.462650
[2]	Maeda Y, Yamada M, Endo T, et al. 1700 nm ASE light source and its application to mid-infrared spectroscopy. Optoelectronics and Communication Conf and Australian Conf on Opt Fibre Technol, 2014
[3]	Heo D, Lee J S, Yun I K, et al. Polarization-independent, high-power, and angle-flared superluminescent diode for WDM-PON applications. Proc IEEE LEOS Annual Meeting Conf, 2005
[4]	Shin D J, Keh Y C, Kwon J W, et al. Low-cost WDM-PON with colorless bidirectional transceivers. J Lightwave Technol, 2006, 24(1): 158 doi: 10.1109/JLT.2005.861122
[5]	Gmachl C, Sivco D L, Colombelli R, et al. Ultra-broadband semiconductor laser. Nature, 2002, 415: 883 doi: 10.1038/415883a
[6]	Djie H S, Ooi B S , Fang X M, et al. Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser. Opt Lett, 2007, 32: 44 doi: 10.1364/OL.32.000044
[7]	Djie H S, Tan C L, Ooi B S, et al. Ultrabroad stimulated emission from quantum-dash laser. Appl Phys Lett, 2007, 91: 111116 doi: 10.1063/1.2784969
[8]	Wang H, Zhou X, Yu H, et al. Ultrabroad stimulated emission from quantum well laser. Appl Phys Lett, 2014, 104: 251101 doi: 10.1063/1.4885366
[9]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. A study of nonlinear lasing dynamics of an InGaAs/AlGaAs/GaAs heterostructure power laser-thyristor emitting at 905 nm. J Appl Phys, 2014, 116: 084503 doi: 10.1063/1.4893956
[10]	Lin C F, Lee B L, Lin P C. Broad-band superluminescent diodes fabricated on a substrate with asymmetric dual quantum wells. IEEE Photonics Technol Lett, 1996, 8: 1456 doi: 10.1109/68.541548
[11]	Kwon O K, Kim K, Sim E D, et al. Asymmetric multiple-quantum-well laser diodes with wide and flat gain. Opt Lett, 2003, 28: 2189 doi: 10.1364/OL.28.002189
[12]	Khan M Z M, Ng T K, Lee C S, et al. Chirped InAs/InP quantum-dash laser with enhanced broad spectrum of stimulated emission. Appl Phys Lett, 2013, 102: 091102 doi: 10.1063/1.4794407
[13]	Podoskin A A, Soboleva O S, Zakharov M S, et al. Optical feedback in 905 nm power laser-thyristors based on AlGaAs/GaAs heterostructures. Semicond Sci Technol, 2015, 30: 125011 doi: 10.1088/0268-1242/30/12/125011
[14]	Slipchenko S O, Podoskin A A, Rozhkov A V, et al. High-power laser thyristors with high injection efficiency (λ=890-910 nm). IEEE Photonics Technol Lett, 2015, 27: 307
[15]	Bennett B R, Soref R A, Del Alamo J A. Carrier-Induced Change in Refractive Index of InP, GaAs, and InGaAsP. IEEE J Quantum Electron, 1990, 26: 113 doi: 10.1109/3.44924
[16]	Chen P A, Chang C Y, Juang C. Carrier-Induced Energy Shift in GaAs/AlGaAs Multiple Quantum Well Laser Diodes. IEEE J Quantum Electron, 1993, 29: 2607 doi: 10.1109/3.250382

Asymmetric quantum well broadband thyristor laser

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