Fig. 1.
(Color online) The appearance of as-grown β-Ga2O3 single crystals. Sample 1 represents unintentionally doped β-Ga2O3 crystal and Sample 2 to Sample 4 represent Si-doped β-Ga2O3 single crystals with an increasing Si content.
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| Citation: |
Shengnan Zhang, Xiaozheng Lian, Yanchao Ma, Weidan Liu, Yingwu Zhang, Yongkuan Xu, Hongjuan Cheng. Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. Journal of Semiconductors, 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003
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S N Zhang, X Z Lian, Y C Ma, W D Liu, Y W Zhang, Y K Xu, H J Cheng, Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method[J]. J. Semicond., 2018, 39(8): 083003. doi: 10.1088/1674-4926/39/8/083003.
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Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method
DOI: 10.1088/1674-4926/39/8/083003
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Abstract
β-Ga2O3 is an ultra-wide band-gap semiconductor with promising applications in UV optical detectors, Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-Ga2O3 crystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-Ga2O3 single crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-Ga2O3 crystals were investigated systematically. -
References
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