J. Semicond. > 2018, Volume 39 > Issue 8 > 084001
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SEMICONDUCTOR DEVICES

Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements

Yuede Yang1, 2, Shaoshuai Sui1, 2, Mingying Tang1, 2, Jinlong Xiao1, 2, Yun Du1, Andrew W. Poon3 and Yongzhen Huang1, 2,

+ Author Affiliations

 Corresponding author: Yongzhen Huang, Email: yzhuang@semi.ac.cn

DOI: 10.1088/1674-4926/39/8/084001

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Abstract: We have proposed and demonstrated hybrid AlGaInAs/Si Fabry–Pérot (FP) lasers, with the FP cavity facet covered by the p-electrode metal for enhancing mode confinement. Continuous-wave lasing is obtained at room temperature with a threshold current of 45 mA for the hybrid FP laser with a cavity length of 415 μm and a width of 7 μm. Near-field optical microscope images indicate an efficient output emission from the underneath evanescently-coupled silicon waveguide. Furthermore, single-mode lasing with a side-mode suppression-ratio of 29 dB and a threshold current of 16 mA is realized for the 150 μm-long hybrid FP laser.

Key words: hybrid AlGaInAs/Si laser, Fabry–Pérot cavity, mode Q factor, metal confinement



[1]
Miller D A B. Device requirements for optical interconnects to silicon chip. Proc IEEE, 2009, 97: 1166 doi: 10.1109/JPROC.2009.2014298
[2]
Liu L, Roelkens G, Van Campenhout J, et al. III–V/silicon-on-insulator nanophotonic cavities for optical network-on-chip. J Nanosci Nanotechnol, 2010, 10: 1461 doi: 10.1166/jnn.2010.2032
[3]
Liang D, Bowers J E. Recent progress in lasers on silicon. Nat Photonics, 2010, 4: 511 doi: 10.1038/nphoton.2010.167
[4]
Rong H M S, Jones R, Liu A S, et al. A continuous-wave Raman silicon laser. Nature, 2005, 433: 725 doi: 10.1038/nature03346
[5]
Camacho-Aguilera R E, Cai Y, Patel N, et al. An electricallypumped germanium laser. Opt Express, 2012, 20: 11316 doi: 10.1364/OE.20.011316
[6]
Groenert M E, Leitz C W, Christopher W, et al. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers. J Appl Phys, 2003, 93: 362 doi: 10.1063/1.1525865
[7]
Liu H Y, Wang T, Jiang Q, et al. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat Photonics, 2011, 5: 416 doi: 10.1038/nphoton.2011.120
[8]
Roelkens G, Thourhout D V, Baets R. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a silicon-on-insulator waveguide circuit. Opt Express, 2006, 14: 8154 doi: 10.1364/OE.14.008154
[9]
Sui S S, Tang M Y, Yang Y D, et al. Sixteen-wavelength hybrid AlGaInAs/Si microdisk laser array. IEEE J Quantum Electron, 2015, 51: 2600108
[10]
Fang W, Park H, Cohen O, et al. Electrically pumped hybrid AlGaInAs–silicon evanescent laser. Opt Express, 2006, 14: 9203 doi: 10.1364/OE.14.009203
[11]
Ren B, Hou Y, Liang Y N. Research progress of III–V laser bonding to Si. J Semicond, 2016, 37(12): 124001 doi: 10.1088/1674-4926/37/12/124001
[12]
Zhang Y J, Qu H W, Wang H L, et al. Hybrid III–V/silicon single-mode laser with periodic microstructures. Opt Lett, 2013, 38: 842 doi: 10.1364/OL.38.000842
[13]
Luo X S, Cheng Y B, Song J F et al. Wafer-scale dies-transfer bonding technology for hybrid III/V-on-silicon photonic integrated circuit application. IEEE J Sel Top Quantum Electron, 2016, 22: 2553453
[14]
Mechet P, Raineri F, Bazin A, et al. Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI. Opt Express, 2013, 21: 10622 doi: 10.1364/OE.21.010622
[15]
Sui S S, Tang M Y, Yang Y D, et al. Investigation of hybrid microring lasers adhesively bonded on silicon wafer. Photon Res, 2015, 3: 289 doi: 10.1364/PRJ.3.000289
[16]
Sui S S, Tang M Y, Yang Y D, et al. Single-mode hybrid AlGaInAs/Si octagonal-ring microlaser with stable output. Chin Opt Lett, 2015, 14: 031402
[17]
Feng P, Zhang Y J, Wang Y F, et al. A novel hybrid III–V/silicon deformed micro-disk single-mode laser. J Semicond, 2015, 36(2): 024012 doi: 10.1088/1674-4926/36/2/024012
[18]
Yuan L J, Tao L, Yu H Y, et al. Hybrid InGaAsP–Si evanescent laser by selective-area metal-bonding method. IEEE Photon Technol Lett, 2013, 25: 1180 doi: 10.1109/LPT.2013.2262265
[19]
Fang W, Koch B R, Jones R, et al. A distributed Bragg reflector silicon evanescent laser. IEEE Photon Technol Lett, 2008, 20: 1667 doi: 10.1109/LPT.2008.2003382
[20]
Keyvaninia S, Verstuyft S, Landschoot L V, et al. Heterogeneously integrated III–V/silicon distributed feedback lasers. Opt Lett, 2013, 38: 5434 doi: 10.1364/OL.38.005434
[21]
Che K J, Huang Y Z. Mode characteristics of metallically coated square microcavity connected with an output waveguide. J Appl Phys, 2010, 107: 113103 doi: 10.1063/1.3431400
[22]
Yao Q F, Huang Y Z, Yang Y D, et al. Analysis of mode characteristics for microcircular resonators confined by different metallic materials. J Semicond, 2016, 37(12): 124004 doi: 10.1088/1674-4926/37/12/124004
[23]
Sui S S, Tang M Y, Yang Y D, et al. Mode investigation for hybrid microring lasers with sloped sidewalls coupled to a silicon waveguide. IEEE Photonics J, 2015, 7(2): 6100209
[24]
Huang Y Z, Yang Y D. Calculation of light delay for coupled microrings by FDTD technique and Padé approximation. J Opt Soc Am A, 2009, 26: 2419 doi: 10.1364/JOSAA.26.002419
Fig. 1.  (Color online) (a) 3-D schematic diagram and (b) cross-sectional view of the hybrid AlGaInAs/Si FP laser.

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Fig. 2.  (Color online) Simulated intensity spectra of the TE modes in the hybrid FP cavity with a width of 1 μm and a length of 4 μm. Solid line: t = 100 nm. Dashed line: t = 200 nm. A: resonance at 1487 nm. B: resonance at 1503 nm.

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Fig. 3.  (Color online) Simulated magnetic-field Hy distributions in (a) the x–z plane at y = 0.1 μm, the x–y planes at (b) z = 0.1 μm, and (c) z = 8 μm for the mode A at 1487 nm, in the hybrid FP cavity with t = 100 nm.

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Fig. 4.  (a) Cross-sectional-view SEM image of the AlGaInAs/Si FP laser covered by the SiO2 and p-electrode metal layers with the evanescently coupled silicon waveguide underneath. (b) Top-view SEM image of the p-electrode metal coated FP laser.

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Fig. 5.  (Color online) (a) Output powers from and applied voltage versus CW injection current for the metal-coated hybrid FP laser. (b) Output peak power versus pulsed injection currents for the hybrid FP lasers with and without p-electrode metal on facets.

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Fig. 6.  (Color online) Lasing spectra of the metal-coated hybrid FP laser measured at the CW injection currents of (a) 50 mA and (b) 60 mA.

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Fig. 7.  Microscope images of (a) the near-field lasing-emission pattern, and (b) the top-view scattering light from the cleaved silicon waveguide facet of a hybrid FP laser at a pulsed injection current of 40 mA.

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Fig. 8.  (Color online) (a) The output peak power versus the pulsed injection current, and (b) the lasing spectra at the pulsed currents of 20 and 40 mA, for the metal-coated 150-μm-long 6-μm-wide hybrid FP laser at 285 K.

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Table 1.   Simulated mode Q factor Qt, radiation Q factor Qr, waveguide coupling efficiency ηc, and output extraction efficiency ηe versus the thickness t for mode A.

t (nm) Qt Qr ηc (%) ηe (%)
50 570 1800 93 30
100 360 630 67 39
150 260 340 39 31
200 210 270 38 29
DownLoad: CSV
[1]
Miller D A B. Device requirements for optical interconnects to silicon chip. Proc IEEE, 2009, 97: 1166 doi: 10.1109/JPROC.2009.2014298
[2]
Liu L, Roelkens G, Van Campenhout J, et al. III–V/silicon-on-insulator nanophotonic cavities for optical network-on-chip. J Nanosci Nanotechnol, 2010, 10: 1461 doi: 10.1166/jnn.2010.2032
[3]
Liang D, Bowers J E. Recent progress in lasers on silicon. Nat Photonics, 2010, 4: 511 doi: 10.1038/nphoton.2010.167
[4]
Rong H M S, Jones R, Liu A S, et al. A continuous-wave Raman silicon laser. Nature, 2005, 433: 725 doi: 10.1038/nature03346
[5]
Camacho-Aguilera R E, Cai Y, Patel N, et al. An electricallypumped germanium laser. Opt Express, 2012, 20: 11316 doi: 10.1364/OE.20.011316
[6]
Groenert M E, Leitz C W, Christopher W, et al. Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers. J Appl Phys, 2003, 93: 362 doi: 10.1063/1.1525865
[7]
Liu H Y, Wang T, Jiang Q, et al. Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate. Nat Photonics, 2011, 5: 416 doi: 10.1038/nphoton.2011.120
[8]
Roelkens G, Thourhout D V, Baets R. Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a silicon-on-insulator waveguide circuit. Opt Express, 2006, 14: 8154 doi: 10.1364/OE.14.008154
[9]
Sui S S, Tang M Y, Yang Y D, et al. Sixteen-wavelength hybrid AlGaInAs/Si microdisk laser array. IEEE J Quantum Electron, 2015, 51: 2600108
[10]
Fang W, Park H, Cohen O, et al. Electrically pumped hybrid AlGaInAs–silicon evanescent laser. Opt Express, 2006, 14: 9203 doi: 10.1364/OE.14.009203
[11]
Ren B, Hou Y, Liang Y N. Research progress of III–V laser bonding to Si. J Semicond, 2016, 37(12): 124001 doi: 10.1088/1674-4926/37/12/124001
[12]
Zhang Y J, Qu H W, Wang H L, et al. Hybrid III–V/silicon single-mode laser with periodic microstructures. Opt Lett, 2013, 38: 842 doi: 10.1364/OL.38.000842
[13]
Luo X S, Cheng Y B, Song J F et al. Wafer-scale dies-transfer bonding technology for hybrid III/V-on-silicon photonic integrated circuit application. IEEE J Sel Top Quantum Electron, 2016, 22: 2553453
[14]
Mechet P, Raineri F, Bazin A, et al. Uniformity of the lasing wavelength of heterogeneously integrated InP microdisk lasers on SOI. Opt Express, 2013, 21: 10622 doi: 10.1364/OE.21.010622
[15]
Sui S S, Tang M Y, Yang Y D, et al. Investigation of hybrid microring lasers adhesively bonded on silicon wafer. Photon Res, 2015, 3: 289 doi: 10.1364/PRJ.3.000289
[16]
Sui S S, Tang M Y, Yang Y D, et al. Single-mode hybrid AlGaInAs/Si octagonal-ring microlaser with stable output. Chin Opt Lett, 2015, 14: 031402
[17]
Feng P, Zhang Y J, Wang Y F, et al. A novel hybrid III–V/silicon deformed micro-disk single-mode laser. J Semicond, 2015, 36(2): 024012 doi: 10.1088/1674-4926/36/2/024012
[18]
Yuan L J, Tao L, Yu H Y, et al. Hybrid InGaAsP–Si evanescent laser by selective-area metal-bonding method. IEEE Photon Technol Lett, 2013, 25: 1180 doi: 10.1109/LPT.2013.2262265
[19]
Fang W, Koch B R, Jones R, et al. A distributed Bragg reflector silicon evanescent laser. IEEE Photon Technol Lett, 2008, 20: 1667 doi: 10.1109/LPT.2008.2003382
[20]
Keyvaninia S, Verstuyft S, Landschoot L V, et al. Heterogeneously integrated III–V/silicon distributed feedback lasers. Opt Lett, 2013, 38: 5434 doi: 10.1364/OL.38.005434
[21]
Che K J, Huang Y Z. Mode characteristics of metallically coated square microcavity connected with an output waveguide. J Appl Phys, 2010, 107: 113103 doi: 10.1063/1.3431400
[22]
Yao Q F, Huang Y Z, Yang Y D, et al. Analysis of mode characteristics for microcircular resonators confined by different metallic materials. J Semicond, 2016, 37(12): 124004 doi: 10.1088/1674-4926/37/12/124004
[23]
Sui S S, Tang M Y, Yang Y D, et al. Mode investigation for hybrid microring lasers with sloped sidewalls coupled to a silicon waveguide. IEEE Photonics J, 2015, 7(2): 6100209
[24]
Huang Y Z, Yang Y D. Calculation of light delay for coupled microrings by FDTD technique and Padé approximation. J Opt Soc Am A, 2009, 26: 2419 doi: 10.1364/JOSAA.26.002419

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    Received: 05 December 2017 Revised: 30 January 2018 Online: Accepted Manuscript: 04 April 2018Uncorrected proof: 12 April 2018Published: 09 August 2018

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      Article Navigation >  Journal of Semiconductors  > 2018  >  39(8): 084001
      Yuede Yang, Shaoshuai Sui, Mingying Tang, Jinlong Xiao, Yun Du, Andrew W. Poon, Yongzhen Huang. Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements[J]. Journal of Semiconductors, 2018, 39(8): 084001. doi: 10.1088/1674-4926/39/8/084001 ****Y D Yang, S S Sui, M Y Tang, J L Xiao, Y Du, A W Poon, Y Z Huang, Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements[J]. J. Semicond., 2018, 39(8): 084001. doi: 10.1088/1674-4926/39/8/084001.
      Citation:
      Yuede Yang, Shaoshuai Sui, Mingying Tang, Jinlong Xiao, Yun Du, Andrew W. Poon, Yongzhen Huang. Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements[J]. Journal of Semiconductors, 2018, 39(8): 084001. doi: 10.1088/1674-4926/39/8/084001 ****
      Y D Yang, S S Sui, M Y Tang, J L Xiao, Y Du, A W Poon, Y Z Huang, Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements[J]. J. Semicond., 2018, 39(8): 084001. doi: 10.1088/1674-4926/39/8/084001.
      shu

      Hybrid AlGaInAs/Si Fabry–Pérot lasers with near-total mode confinements

      DOI: 10.1088/1674-4926/39/8/084001
      • 1.

        State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

      • 2.

        College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

      • 3.

        Photonic Device Laboratory, Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China

      Funds:

      Project supported by the Key Research Program of Frontier Sciences, Chinese Academy of Sciences (No. QYZDJ-SSW-JSC002), the NSFC/RGC Joint Project (No. 61431166003), and the National Natural Science Foundation of China (No. 61377105).

      More Information
      • Corresponding author: Email: yzhuang@semi.ac.cn
      • Received Date: 2017-12-05
      • Revised Date: 2018-01-30
      • Published Date: 2018-08-01

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