Fig. 1.
(Color online) The simulated deformation of GaAs layer and SiO2 layer at 870 °C.
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| Citation: |
Tianjiang He, Suping Liu, Wei Li, Li Zhong, Xiaoyu Ma, Cong Xiong, Nan Lin, Zhennuo Wang. Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser[J]. Journal of Semiconductors, 2023, 44(10): 102302. doi: 10.1088/1674-4926/44/10/102302
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T J He, S P Liu, W Li, L Zhong, X Y Ma, C Xiong, N Lin, Z N Wang. Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser[J]. J. Semicond, 2023, 44(10): 102302. doi: 10.1088/1674-4926/44/10/102302
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Study of quantum well mixing induced by impurity-free vacancy in the primary epitaxial wafers of a 915 nm semiconductor laser
DOI: 10.1088/1674-4926/44/10/102302
More Information
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Tianjiang He：received his BS degree from Huazhong University of Science and Technology in 2019. He is now a PhD student at University of Chinese Academy of Sciences under the supervision of Prof. Xiaoyu Ma. His research focuses on high power semiconductor lasers -
Suping Liu：received her BS degree in 1992 and MS degree in 1995 at Jilin University. She then joined the Xiaoyu Ma Group at the Institute of Semiconductors, Chinese Academy of Sciences as a senior engineer. Her research interests include high power semiconductor lasers and their components, solid state lasers and storage lasers - Corresponding author: spliu@semi.ac.cn
- Revised Date: 2023-03-24 Available Online: 2023-05-26
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Abstract
Output power and reliability are the most important characteristic parameters of semiconductor lasers. However, catastrophic optical damage (COD), which usually occurs on the cavity surface, will seriously damage the further improvement of the output power and affect the reliability. To improve the anti-optical disaster ability of the cavity surface, a non-absorption window (NAW) is adopted for the 915 nm InGaAsP/GaAsP single-quantum well semiconductor laser using quantum well mixing (QWI) induced by impurity-free vacancy. Both the principle and the process of point defect diffusion are described in detail in this paper. We also studied the effects of annealing temperature, annealing time, and the thickness of SiO2 film on the quantum well mixing in a semiconductor laser with a primary epitaxial structure, which is distinct from the previous structures. We found that when compared with the complete epitaxial structure, the blue shift of the semiconductor laser with the primary epitaxial structure is larger under the same conditions. To obtain the appropriate blue shift window, the primary epitaxial structure can use a lower annealing temperature and shorter annealing time. In addition, the process is less expensive. We also provide references for upcoming device fabrication. -
References
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