Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

Min Liu; Ziteng Cai; Jian Liu; Nanjian Wu; Liyuan Liu

doi:10.1088/1674-4926/44/10/102401

J. Semicond. > 2023, Volume 44 > Issue 10 > 102401

ARTICLES

Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

Min Liu^{1, 2}, Ziteng Cai^{1, 3}, Jian Liu^{1, 2}, Nanjian Wu^{1, 2} and Liyuan Liu^{1, 2,}

+ Author Affiliations

1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3. Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

Author Bio:

Min Liu (S’22) is pursuing a Ph.D. degree with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. Her research interests include low-noise readout integrated circuits design, terahertz spectrometer design, and CMOS-integrated terahertz image sensors design.

Ziteng Cai (S’22) is pursuing a B.S. degree at the Beijing University of Technology, Beijing, China, and trained at the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His research interests include terahertz detector design and CMOS-integrated terahertz image sensor design.

Jian Liu is a Full Professor in microelectronics and solid-state electronics with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, since 2005. His research interests include semiconductor optoelectronic detectors, terahertz imagers, and metamaterials.

Nanjian Wu (M’06) has been a Professor with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, since 2000. Since 2009, he has been an Honorable Guest Professor with the Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan. His research includes the field of mixed-signal LSI and vision chip design.

Liyuan Liu (M’11) joined the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, as an Associate Professor in 2012, where he became a Professor in 2018. His research interests include mixed-signal IC design, CMOS image sensors design, terahertz image sensors design, and monolithic vision chip design.

Corresponding author: Liyuan Liu, liuly@semi.ac.cn

DOI: 10.1088/1674-4926/44/10/102401

Abstract: This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm² and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.

Key words: power detectors, quantum cascade laser (QCL), CMOS image sensor (CIS), terahertz

References

[1]	Su Y R, Ma W B, Yang Y M. Perovskite semiconductors for direct X-ray detection and imaging. J Semicond, 2020, 41, 051204 doi: 10.1088/1674-4926/41/5/051204
[2]	Sun Q S, He Y Z, Liu K, et al. Recent advances in terahertz technology for biomedical applications. Quant Imaging Med Surg, 2017, 7, 345 doi: 10.21037/qims.2017.06.02
[3]	Son J H, Oh S J, Cheon H. Potential clinical applications of terahertz radiation. J Appl Phys, 2019, 125, 190901 doi: 10.1063/1.5080205
[4]	D’Arco A, Di Di Fabrizio M, Dolci V, et al. THz pulsed imaging in biomedical applications. Condens Matter, 2020, 5, 25 doi: 10.3390/condmat5020025
[5]	Woolard D L, Jensen J O, Hwu R J, et al. Terahertz science and technology for military and security applications. World scinetific, 2007
[6]	Brun M A, Formanek F, Yasuda A, et al. Terahertz imaging applied to cancer diagnosis. Phys Med Biol, 2010, 55, 4615 doi: 10.1088/0031-9155/55/16/001
[7]	Zhang H, Sfarra S, Saluja K, et al. Non-destructive investigation of paintings on canvas by continuous wave terahertz imaging and flash thermography. J Nondestruct Eval, 2017, 36, 34 doi: 10.1007/s10921-017-0414-8
[8]	Kawase K, Shibuya T, Hayashi S, et al. THz imaging techniques for nondestructive inspections. Comptes Rendus Physique, 2010, 11, 510 doi: 10.1016/j.crhy.2010.04.003
[9]	Steyaert W, Reynaert P. A THz signal source with integrated antenna for non-destructive testing in 28nm bulk CMOS. 2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2016, 1 doi: 10.1109/ASSCC.2015.7387436
[10]	Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. Phys Rev Lett, 1993, 71, 2465 doi: 10.1103/PhysRevLett.71.2465
[11]	Ojefors E, Pfeiffer U R, Lisauskas A, et al. A 0.65 THz focal-plane array in a quarter-micron CMOS process technology. IEEE J Solid State Circuits, 2009, 44, 1968 doi: 10.1109/JSSC.2009.2021911
[12]	Al Hadi R, Sherry H, Grzyb J, et al. A 1 k-pixel video camera for 0.7–1.1 terahertz imaging applications in 65-nm CMOS. IEEE J Solid State Circuits, 2012, 47, 2999 doi: 10.1109/JSSC.2012.2217851
[13]	Kim D Y, Park S, Han R, et al. 820-GHz imaging array using diode-connected NMOS transistors in 130-nm CMOS. 2013 Symposium on VLSI Circuits, Kyoto, Japan, 2013, C12
[14]	Lisauskas A, Bauer M, Boppel S, et al. Exploration of terahertz imaging with silicon MOSFETs. J Infrared Milli Terahz Waves, 2014, 35, 63 doi: 10.1007/s10762-013-0047-7
[15]	Fang T, Dou R J, Liu L Y, et al. A 25 fps 32 × 24 digital CMOS terahertz image sensor. 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2018, 87 doi: 10.1109/ASSCC.2018.8579336
[16]	Yokoyama S, Ikebe M, Kanazawa Y, et al. 5.8 A 32 × 32-pixel 0.9THz imager with pixel-parallel 12b VCO-based ADC in 0.18μm CMOS. 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 2019, 108 doi: 10.1109/ISSCC.2019.8662483
[17]	Jain R, Hillger P, Grzyb J, et al. 34.3 A 32 × 32 pixel 0.46-to-0.75THz light-field camera SoC in 0.13μm CMOS. 2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, 484 doi: 10.1109/ISSCC42613.2021.9365832
[18]	Zhuo N, Liu F Q, Wang Z G. Quantum cascade lasers: From sketch to mainstream in the mid and far infrared. J Semicond, 2020, 41, 010301 doi: 10.1088/1674-4926/41/1/010301
[19]	Kindness S J, Jessop D S, Wei B, et al. 100% amplitude modulation of an external cavity terahertz QCL using an optoelectronic chopper based on metamaterials and graphene. 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017, 1 doi: 10.1109/CLEOE-EQEC.2017.8086346
[20]	Jin Y, Reno J L, Kumar S. Phase-locked terahertz plasmonic laser array with 2 W output power in a single spectral mode. Optica, OPTICA, 2020, 7, 708 doi: 10.1364/OPTICA.390852
[21]	Li W J, Ma Y, Xu Y F, et al. Continuous-wave single-mode quantum cascade laser at 5.1 THz based on graded sampled grating design. Photon Res, 2022, 10, 2686 doi: 10.1364/PRJ.467974
[22]	International Telecommunication Union ITU-R P. 676-11: Attenuation by Atmospheric Gases (ITU, 2016).
[23]	The HITRAN Database. Accessed on Mar. 2019. [Online]. Available: http://www.cfa.harvard.edu/hitran/
[24]	Fang T, Liu Z Y, Liu L Y, et al. Detection of 3.0 THz wave with a detector in 65 nm standard CMOS process. 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2017, 189 doi: 10.11972/j.issn.1001-9014.2020.01.009
[25]	Fang T, Liu L Y, Liu Z Y, et al. A 3.0 THz detector in 65 nm standard CMOS process. J Infrared Millim Waves, 2020, 39, 56 doi: 10.1109/ASSCC.2017.8240248
[26]	Ikamas K, Lisauskas A, Boppel S, et al. Efficient detection of 3 THz radiation from quantum cascade laser using silicon CMOS detectors. J Infrared Millim Terahertz Waves, 2017, 38, 1183 doi: 10.1007/s10762-017-0407-9
[27]	Boppel S, Lisauskas A, Mundt M, et al. CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz. IEEE Trans Microw Theory Tech, 2012, 60, 3834 doi: 10.1109/TMTT.2012.2221732
[28]	Smith T J, Broome A, Stanley D, et al. A hybrid THz imaging system with a 100-pixel CMOS imager and a 3.25–3.50 THz quantum cascade laser frequency comb. ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, 151 doi: 10.1109/ESSCIRC.2019.8902823
[29]	Liu Z Y, Liu L Y, Yang J, et al. A CMOS fully integrated 860-GHz terahertz sensor. IEEE Trans Terahertz Sci Technol, 2017, 7, 455 doi: 10.1109/TTHZ.2017.2692040
[30]	Knap W, Teppe F, Meziani Y, et al. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors. Appl Phys Lett, 2004, 85, 675 doi: 10.1063/1.1775034
[31]	Dyakonov M, Shur M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. IEEE Trans Electron Devices, 1996, 43, 380 doi: 10.1109/16.485650
[32]	Crowne F J. Microwave response of a high electron mobility transistor in the presence of a Dyakonov–Shur instability. J Appl Phys, 2002, 91, 5377 doi: 10.1063/1.1448891
[33]	Lisauskas A, Glaab D, Roskos H G, et al. Terahertz imaging with Si MOSFET focal-plane arrays. SPIE OPTO: Integrated Optoelectronic Devices. Proc SPIE 7215, Terahertz Technology and Applications II, 2009, 119 doi: 10.1117/12.809552
[34]	THORLABS ITC4000 Series Operation Manual, Version 3.9. New Jersey, U. S. A: Thorlabs, Inc. , Jul. 2018.
[35]	Guo Z J, Yu N M, Wu L S. Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor. J Semicond, 2019, 40, 122404 doi: 10.1088/1674-4926/40/12/122404
[36]	Wu R, Huijsing J H, Makinwa K A A. Read-out integrated circuits. Springer, 2012, 137
[37]	Fang T, Liu M, Liu L Y, et al. A 32 × 32 array terahertz sensor in 65-nm CMOS technology. 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2022, 259j doi: 10.1109/ICTA53157.2021.9661999
[38]	Javadi E, But D B, Ikamas K, et al. Sensitivity of field-effect transistor-based terahertz detectors. Sensors, 2021, 21, 2909 doi: 10.3390/s21092909
[39]	Ferreras M, Čibiraitė-Lukenskienė D, Lisauskas A, et al. Broadband sensing around 1 THz via a novel biquad-antenna-coupled low-NEP detector in CMOS. IEEE Trans Terahertz Sci Technol, 2021, 11, 16 doi: 10.1109/TTHZ.2020.3031483
[40]	Zdanevičius J, Bauer M, Boppel S, et al. Camera for high-speed THz imaging. J Infrared Milli Terahz Waves, 2015, 36, 986 doi: 10.1007/s10762-015-0169-1
[41]	Boukhayma A, Dupret A, Rostaing J P, et al. A low-noise CMOS THz imager based on source modulation and an In-pixel high-Q passive switched-capacitor N-path filter. Sensors (Basel), 2016, 16, 325 doi: 10.3390/s16030325

Fig. 1. (a) NQS RC-ladder model, (b) spatial evolution of carrier oscillation amplitude at excitation of 3.0 THz and (c) spatial evolution of carrier oscillation amplitude at excitation of 30 GHz.

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Fig. 2. (Color online) Micrograph of a 1.5 × 1.5 mm² silicon die showing different detectors with variable-sized patch antennas. A close-up photograph gives nine detectors of different resonant frequencies. Chip photograph reproduced from Refs. [24, 25].

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Fig. 3. Detector model: cross-section illustrating the patch-antenna-coupled NMOS device for THz detection. The ground plane size is 60 × 25 µm². The dielectric distance is 4.605 µm.

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Fig. 4. QCL power versus different pulse currents. The QCL power is measured with the 3A-P-THz absolute power meter.

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Fig. 5. (Color online) Detected maximum voltage response and its corresponding gate bias at different pulse currents. Detector in the first row and the fourth column D14 was selected for analysis.

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Fig. 6. (Color online) Measured voltage response of three different detectors with QCL illumination. The detector in the x-th row and the y-th column is expressed as Dxy.

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Fig. 7. (Color online) Measured noise response of three different detectors without QCL illumination. The detector in the x-th row and the y-th column is expressed as Dxy.

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Fig. 8. Block diagram of the off-chip FPGA-controlled 32 × 32-pixel CIS.

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Fig. 9. (Color online) (a) Schematic of a single pixel; (b) the pixel layout model.

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Fig. 10. (Color online) Chip die microphotograph (upper panel). The front side and the back side (lower panel) of testing PCB for the 3.0 THz CIS.

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Fig. 11. Measurement setup for characterizing the CIS.

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Fig. 12. (Color online) Image of the normalized 3.0 THz QCL beam in video mode.

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Fig. 13. (Color online) Measured responsivity of single pixel and CIS versus gate-bias voltage.

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Fig. 14. (Color online) Measured CIS integral NEP dependance on gate-bias voltage.

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Fig. 15. (Color online) Measured source beams in different frame rate.

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Table 1. Parameters and measured results of partial FET-based detectors.

Detector¹	Patch size (µm²)	TL1 (µm²)	Resonant frequency (THz)	Directivity (dBi)	Max. voltage response (mV)	Responsivity² (V/W)	NEP (pW/Hz^1/2)	SNR (dB)
D88	30 × 8	4.2 × 2	2.80	3.50	2.72@0.79 V	422	189	90
D13	30 × 2	6.0 × 2	2.85	3.11	2.13@0.27 V	374	56	100
D95	30 × 7	4.5 × 2	2.89	3.12	2.93@0.19 V	528	174	90
D14	30 × 2	5.5 × 2	2.94	2.75	2.59@0.23 V	526	123	92
D15	30 × 2	5.0 × 2	3.04	2.29	2.56@0.16 V	618	139	89
D72	30 × 4	4.5 × 2	3.04	2.37	3.35@0.16 V	791	245	84
D55	20 × 2	6.0 × 2	3.11	3.79	4.15@0.21 V	741	174	90
D36	25 × 2	5.0 × 2	3.16	2.22	3.22@0.13 V	855	71	94
D16	30 × 2	4.0 × 2	3.25	1.88	3.02@0.18 V	915	39	98
¹ Dxy refers to the detector in the x-th row and y-th column.
² The responsivity is estimated according to the raster-scanning source beam with D14.

DownLoad: CSV

Table 2. Comparison with other published CMOS imagers.

Freq. (THz)	Technology	Pixel (x×y)	Rv¹ (kV/W)	NEP (nW)	Readout chain	Frame rate (fps)	Optics	Reference
3.0	65-nm CMOS	32 × 32	423	5.4	On-chip	Max.319	None	This work
0.79−0.96	65-nm CMOS	32 × 32	562−1124	10−20	External	Max.500	Si lens	[12]
0.59	150-nm CMOS	12 × 12	348	15.2	External	16	None	[14]
0.46−0.75	130-nm CMOS	32 × 32	0.014 A/W	36	On-chip	25	Si lens	[17]
0.27−0.6	130-nm CMOS	31 × 31	272−378	0.6−0.8	On-chip	25−100	None	[41]
¹ The responsivity is a normalized value excluding gain and measured at video mode.

DownLoad: CSV

[1]	Su Y R, Ma W B, Yang Y M. Perovskite semiconductors for direct X-ray detection and imaging. J Semicond, 2020, 41, 051204 doi: 10.1088/1674-4926/41/5/051204
[2]	Sun Q S, He Y Z, Liu K, et al. Recent advances in terahertz technology for biomedical applications. Quant Imaging Med Surg, 2017, 7, 345 doi: 10.21037/qims.2017.06.02
[3]	Son J H, Oh S J, Cheon H. Potential clinical applications of terahertz radiation. J Appl Phys, 2019, 125, 190901 doi: 10.1063/1.5080205
[4]	D’Arco A, Di Di Fabrizio M, Dolci V, et al. THz pulsed imaging in biomedical applications. Condens Matter, 2020, 5, 25 doi: 10.3390/condmat5020025
[5]	Woolard D L, Jensen J O, Hwu R J, et al. Terahertz science and technology for military and security applications. World scinetific, 2007
[6]	Brun M A, Formanek F, Yasuda A, et al. Terahertz imaging applied to cancer diagnosis. Phys Med Biol, 2010, 55, 4615 doi: 10.1088/0031-9155/55/16/001
[7]	Zhang H, Sfarra S, Saluja K, et al. Non-destructive investigation of paintings on canvas by continuous wave terahertz imaging and flash thermography. J Nondestruct Eval, 2017, 36, 34 doi: 10.1007/s10921-017-0414-8
[8]	Kawase K, Shibuya T, Hayashi S, et al. THz imaging techniques for nondestructive inspections. Comptes Rendus Physique, 2010, 11, 510 doi: 10.1016/j.crhy.2010.04.003
[9]	Steyaert W, Reynaert P. A THz signal source with integrated antenna for non-destructive testing in 28nm bulk CMOS. 2015 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2016, 1 doi: 10.1109/ASSCC.2015.7387436
[10]	Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. Phys Rev Lett, 1993, 71, 2465 doi: 10.1103/PhysRevLett.71.2465
[11]	Ojefors E, Pfeiffer U R, Lisauskas A, et al. A 0.65 THz focal-plane array in a quarter-micron CMOS process technology. IEEE J Solid State Circuits, 2009, 44, 1968 doi: 10.1109/JSSC.2009.2021911
[12]	Al Hadi R, Sherry H, Grzyb J, et al. A 1 k-pixel video camera for 0.7–1.1 terahertz imaging applications in 65-nm CMOS. IEEE J Solid State Circuits, 2012, 47, 2999 doi: 10.1109/JSSC.2012.2217851
[13]	Kim D Y, Park S, Han R, et al. 820-GHz imaging array using diode-connected NMOS transistors in 130-nm CMOS. 2013 Symposium on VLSI Circuits, Kyoto, Japan, 2013, C12
[14]	Lisauskas A, Bauer M, Boppel S, et al. Exploration of terahertz imaging with silicon MOSFETs. J Infrared Milli Terahz Waves, 2014, 35, 63 doi: 10.1007/s10762-013-0047-7
[15]	Fang T, Dou R J, Liu L Y, et al. A 25 fps 32 × 24 digital CMOS terahertz image sensor. 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2018, 87 doi: 10.1109/ASSCC.2018.8579336
[16]	Yokoyama S, Ikebe M, Kanazawa Y, et al. 5.8 A 32 × 32-pixel 0.9THz imager with pixel-parallel 12b VCO-based ADC in 0.18μm CMOS. 2019 IEEE International Solid-State Circuits Conference-(ISSCC), 2019, 108 doi: 10.1109/ISSCC.2019.8662483
[17]	Jain R, Hillger P, Grzyb J, et al. 34.3 A 32 × 32 pixel 0.46-to-0.75THz light-field camera SoC in 0.13μm CMOS. 2021 IEEE International Solid- State Circuits Conference (ISSCC), 2021, 484 doi: 10.1109/ISSCC42613.2021.9365832
[18]	Zhuo N, Liu F Q, Wang Z G. Quantum cascade lasers: From sketch to mainstream in the mid and far infrared. J Semicond, 2020, 41, 010301 doi: 10.1088/1674-4926/41/1/010301
[19]	Kindness S J, Jessop D S, Wei B, et al. 100% amplitude modulation of an external cavity terahertz QCL using an optoelectronic chopper based on metamaterials and graphene. 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2017, 1 doi: 10.1109/CLEOE-EQEC.2017.8086346
[20]	Jin Y, Reno J L, Kumar S. Phase-locked terahertz plasmonic laser array with 2 W output power in a single spectral mode. Optica, OPTICA, 2020, 7, 708 doi: 10.1364/OPTICA.390852
[21]	Li W J, Ma Y, Xu Y F, et al. Continuous-wave single-mode quantum cascade laser at 5.1 THz based on graded sampled grating design. Photon Res, 2022, 10, 2686 doi: 10.1364/PRJ.467974
[22]	International Telecommunication Union ITU-R P. 676-11: Attenuation by Atmospheric Gases (ITU, 2016).
[23]	The HITRAN Database. Accessed on Mar. 2019. [Online]. Available: http://www.cfa.harvard.edu/hitran/
[24]	Fang T, Liu Z Y, Liu L Y, et al. Detection of 3.0 THz wave with a detector in 65 nm standard CMOS process. 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2017, 189 doi: 10.11972/j.issn.1001-9014.2020.01.009
[25]	Fang T, Liu L Y, Liu Z Y, et al. A 3.0 THz detector in 65 nm standard CMOS process. J Infrared Millim Waves, 2020, 39, 56 doi: 10.1109/ASSCC.2017.8240248
[26]	Ikamas K, Lisauskas A, Boppel S, et al. Efficient detection of 3 THz radiation from quantum cascade laser using silicon CMOS detectors. J Infrared Millim Terahertz Waves, 2017, 38, 1183 doi: 10.1007/s10762-017-0407-9
[27]	Boppel S, Lisauskas A, Mundt M, et al. CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz. IEEE Trans Microw Theory Tech, 2012, 60, 3834 doi: 10.1109/TMTT.2012.2221732
[28]	Smith T J, Broome A, Stanley D, et al. A hybrid THz imaging system with a 100-pixel CMOS imager and a 3.25–3.50 THz quantum cascade laser frequency comb. ESSCIRC 2019-IEEE 45th European Solid State Circuits Conference (ESSCIRC), 2019, 151 doi: 10.1109/ESSCIRC.2019.8902823
[29]	Liu Z Y, Liu L Y, Yang J, et al. A CMOS fully integrated 860-GHz terahertz sensor. IEEE Trans Terahertz Sci Technol, 2017, 7, 455 doi: 10.1109/TTHZ.2017.2692040
[30]	Knap W, Teppe F, Meziani Y, et al. Plasma wave detection of sub-terahertz and terahertz radiation by silicon field-effect transistors. Appl Phys Lett, 2004, 85, 675 doi: 10.1063/1.1775034
[31]	Dyakonov M, Shur M. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid. IEEE Trans Electron Devices, 1996, 43, 380 doi: 10.1109/16.485650
[32]	Crowne F J. Microwave response of a high electron mobility transistor in the presence of a Dyakonov–Shur instability. J Appl Phys, 2002, 91, 5377 doi: 10.1063/1.1448891
[33]	Lisauskas A, Glaab D, Roskos H G, et al. Terahertz imaging with Si MOSFET focal-plane arrays. SPIE OPTO: Integrated Optoelectronic Devices. Proc SPIE 7215, Terahertz Technology and Applications II, 2009, 119 doi: 10.1117/12.809552
[34]	THORLABS ITC4000 Series Operation Manual, Version 3.9. New Jersey, U. S. A: Thorlabs, Inc. , Jul. 2018.
[35]	Guo Z J, Yu N M, Wu L S. Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor. J Semicond, 2019, 40, 122404 doi: 10.1088/1674-4926/40/12/122404
[36]	Wu R, Huijsing J H, Makinwa K A A. Read-out integrated circuits. Springer, 2012, 137
[37]	Fang T, Liu M, Liu L Y, et al. A 32 × 32 array terahertz sensor in 65-nm CMOS technology. 2021 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2022, 259j doi: 10.1109/ICTA53157.2021.9661999
[38]	Javadi E, But D B, Ikamas K, et al. Sensitivity of field-effect transistor-based terahertz detectors. Sensors, 2021, 21, 2909 doi: 10.3390/s21092909
[39]	Ferreras M, Čibiraitė-Lukenskienė D, Lisauskas A, et al. Broadband sensing around 1 THz via a novel biquad-antenna-coupled low-NEP detector in CMOS. IEEE Trans Terahertz Sci Technol, 2021, 11, 16 doi: 10.1109/TTHZ.2020.3031483
[40]	Zdanevičius J, Bauer M, Boppel S, et al. Camera for high-speed THz imaging. J Infrared Milli Terahz Waves, 2015, 36, 986 doi: 10.1007/s10762-015-0169-1
[41]	Boukhayma A, Dupret A, Rostaing J P, et al. A low-noise CMOS THz imager based on source modulation and an In-pixel high-Q passive switched-capacitor N-path filter. Sensors (Basel), 2016, 16, 325 doi: 10.3390/s16030325

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Received: 24 January 2023 Revised: 23 March 2023 Online: Accepted Manuscript: 26 May 2023Uncorrected proof: 31 August 2023Corrected proof: 04 September 2023Published: 10 October 2023

Article Navigation > Journal of Semiconductors > 2023 > 44(10): 102401

Min Liu, Ziteng Cai, Jian Liu, Nanjian Wu, Liyuan Liu. Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J]. Journal of Semiconductors, 2023, 44(10): 102401. doi: 10.1088/1674-4926/44/10/102401 ****M Liu, Z T Cai, J Liu, N J Wu, L Y Liu. Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J]. J. Semicond, 2023, 44(10): 102401. doi: 10.1088/1674-4926/44/10/102401

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Min Liu, Ziteng Cai, Jian Liu, Nanjian Wu, Liyuan Liu. Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J]. Journal of Semiconductors, 2023, 44(10): 102401. doi: 10.1088/1674-4926/44/10/102401 ****

M Liu, Z T Cai, J Liu, N J Wu, L Y Liu. Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J]. J. Semicond, 2023, 44(10): 102401. doi: 10.1088/1674-4926/44/10/102401

Citation:

M Liu, Z T Cai, J Liu, N J Wu, L Y Liu. Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process[J]. J. Semicond, 2023, 44(10): 102401. doi: 10.1088/1674-4926/44/10/102401

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Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

DOI: 10.1088/1674-4926/44/10/102401

Min Liu^{1, 2},
Ziteng Cai^{1, 3},
Jian Liu^{1, 2},
Nanjian Wu^{1, 2},
Liyuan Liu^{1, 2,}

1.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2.
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3.
Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China

More Information

Min Liu：(S’22) is pursuing a Ph.D. degree with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. Her research interests include low-noise readout integrated circuits design, terahertz spectrometer design, and CMOS-integrated terahertz image sensors design
Ziteng Cai：(S’22) is pursuing a B.S. degree at the Beijing University of Technology, Beijing, China, and trained at the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. His research interests include terahertz detector design and CMOS-integrated terahertz image sensor design
Jian Liu：is a Full Professor in microelectronics and solid-state electronics with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, since 2005. His research interests include semiconductor optoelectronic detectors, terahertz imagers, and metamaterials
Nanjian Wu：(M’06) has been a Professor with the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China, since 2000. Since 2009, he has been an Honorable Guest Professor with the Research Institute of Electronics, Shizuoka University, Hamamatsu, Japan. His research includes the field of mixed-signal LSI and vision chip design
Liyuan Liu：(M’11) joined the State Key Laboratory of Super-lattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, as an Associate Professor in 2012, where he became a Professor in 2018. His research interests include mixed-signal IC design, CMOS image sensors design, terahertz image sensors design, and monolithic vision chip design
Corresponding author: liuly@semi.ac.cn
Received Date: 2023-01-24
Revised Date: 2023-03-23

Available Online: 2023-05-26

Abstract

Abstract

This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS process. Based on the plasma-wave theory proposed by Dyakonov and Shur, we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser (QCL). Furthermore, we present a fully integrated high-speed 32 × 32-pixel 3.0 THz CMOS image sensor (CIS). The full CIS measures 2.81 × 5.39 mm² and achieves a 423 V/W responsivity (Rv) and a 5.3 nW integral noise equivalent power (NEP) at room temperature. In experiments, we demonstrate a testing speed reaching 319 fps under continuous-wave (CW) illumination of a 3.0 THz QCL. The results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.
- power detectors,
- quantum cascade laser (QCL),
- CMOS image sensor (CIS),
- terahertz

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References(41)

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Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

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