Table 1. Performance comparison of different types image sensor.
| Ref. | [1] | [2] | [3] | [5] | [7] |
| Sensor type | CIS + EVS | CIS + EVS | CIS + EVS | THz CIS | X-ray SPAD |
| Technology | 40 nm BSI CIS + 65 nm CMOS + 3DMIM + 40 nm CMOS | 90 nm BI CIS + 22 nm CMOS | 90 nm BI CIS + 22 nm CMOS | 180 nm CMOS | 65 nm CMOS |
| Resolution (pixel) | 1032 × 928(EVS)/ 4096 × 3680(CIS) | 2.08M(EVS)/ 35.6M(CIS) | 640 × 640 | 128 × 128 | 400 × 200 |
| Pixel pitch (μm) | 8.8(EVS)/2.2(CIS) | 4.88(EVS)/1.22(CIS) | 2.97 | 60 | 49.5 |
| Frame rate (fps) | 18(CIS) | 59(CIS) | 60(CIS) | 130 | 600 |
| Dynamic range (dB) | – | 67.8 | 72.2 | 73 | 117.7 |
| Random noise (e-) | 2.2 | 1.57 | 2.6 | – | – |
| Maximum event rate (Eps) | 4.6G | 4.56G | 1.41G | – | – |
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Peng Feng：got his B.S. degree in 2006 at Sichuan University and the Ph.D. degree in 2011 at the Institute of Semiconductors, Chinese Academy of Sciences (CAS). He is now an associate professor at the Institute of Semiconductors, CAS. His research interests include ultra-low power mixed signal/RF integrated circuits and CMOS image sensors
Nanjian Wu：received the B.S. degree in physics from Heilongjiang University, Harbin, China, in 1982, the M.S. degree in electronic engineering from Jilin University, Changchun, China, in 1985, and the D.S. degree in electronic engineering from The University of Electro-Communications, Tokyo, Japan, in 1992. Since 2000, he has been a Professor with the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China. In 2005, as a Visiting Professor, he visited the Research Center for Integrated Quantum Electronics, Hokkaido University. Since 2009, he has been an Honorable Guest Professor with the Research Institute of Electronics, Shizuoka University, Shizuoka, Japan. His research is in the field of mixed-signal LSI and vision chip design
Jian Liu：received the B.S. degree in semiconductor physics & devices from Jilin University in 1988, the MPhil degree in physics from The University of Birmingham, United Kingdom in 1998, and the Dr. rer. nat. degree in physics from Julius Maximilian Universität Würzburg, Germany in 2003. He is a full professor in microelectronics and solid state electronics with the Institute of Semiconductors, Chinese Academy of Sciences. His current research interests include CMOS image sensors, THz detectors and metamaterials
Liyuan Liu：received the B.S. and Ph.D. degrees in electrical engineering from Electronic Engineering Department, Institute of Microelectronics, Tsinghua University, Beijing, China, in 2005 and 2010, respectively. In 2012, he joined the State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, as an Associate Professor, where he became a professor in 2018. His current research interests are high speed CMOS image sensors, SPAD based 3D image sensors, CMOS terahertz image sensors, smart processors for edge computing and design of monolithic vision chip
