Chin. J. Semicond. > 1994, Volume 15 > Issue 8 > 565-568

Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy

Yang Guowen , Xu Junying , Xiao Jianwei , Xu Zuntu , Zhang Jingmin , Zhang Wanhua and Zeng Yiping and Chen Lianhui

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Received: 18 August 2015 Revised: Online: Published: 01 August 1994

Article Navigation > Journal of Semiconductors > 1994 > 15(8): 565-568

Yang Guowen, Xu Junying, Xiao Jianwei, Xu Zuntu, Zhang Jingmin, Zhang Wanhua, Zeng Yiping and Chen Lianhui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. 半导体学报(英文版), 1994, 15(8): 565-568.

Citation:

Yang Guowen, Xu Junying, Xiao Jianwei, Xu Zuntu, Zhang Jingmin, Zhang Wanhua, Zeng Yiping and Chen Lianhui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. 半导体学报(英文版), 1994, 15(8): 565-568.

Yang Guowen, Xu Junying, Xiao Jianwei, Xu Zuntu, Zhang Jingmin, Zhang Wanhua, Zeng Yiping and Chen Lianhui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. 半导体学报(英文版), 1994, 15(8): 565-568.

Citation:

Yang Guowen, Xu Junying, Xiao Jianwei, Xu Zuntu, Zhang Jingmin, Zhang Wanhua, Zeng Yiping and Chen Lianhui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. 半导体学报(英文版), 1994, 15(8): 565-568.

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