Journal of Semiconductors

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Volume 15, Issue 8, Aug 1994

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CONTENTS

在线性型分子晶体中的局域性集体激发特性

庞小峰

Chin. J. Semicond. 1994, 15(8): 511-517

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 511.

庞小峰. 在线性型分子晶体中的局域性集体激发特性[J]. Chin. J. Semicond., 1994, 15(8): 511..Export: BibTex EndNote

庞小峰. 在线性型分子晶体中的局域性集体激发特性[J]. Chin. J. Semicond., 1994, 15(8): 511...

CoSi₂可望成为GaAs MESFET自对准工艺中的栅极材料

金高龙，陈维德，许振嘉

Chin. J. Semicond. 1994, 15(8): 518-523

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(8): 518.

金高龙，陈维德，许振嘉. CoSi_2可望成为GaAs MESFET自对准工艺中的栅极材料[J]. Chin. J. Semicond., 1994, 15(8): 518..Export: BibTex EndNote

金高龙，陈维德，许振嘉. CoSi_2可望成为GaAs MESFET自对准工艺中的栅极材料[J]. Chin. J. Semicond., 1994, 15(8): 518...

Co、Ti／Si_1－xGe_x薄膜快速退火固相反应结构和组分研究

亓文杰，李炳宗，黄维宁，顾志光，张翔九，盛篪，胡际璜，吕宏强，卫星，沈孝良

Chin. J. Semicond. 1994, 15(8): 524-532

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(8): 524.

亓文杰，李炳宗，黄维宁，顾志光，张翔九，盛篪，胡际璜，吕宏强，卫星，沈孝良. Co、Ti／Si_（1－x）Ge_x薄膜快速退火固相反应结构和组分研究[J]. Chin. J. Semicond., 1994, 15(8): 524..Export: BibTex EndNote

亓文杰，李炳宗，黄维宁，顾志光，张翔九，盛篪，胡际璜，吕宏强，卫星，沈孝良. Co、Ti／Si_（1－x）Ge_x薄膜快速退火固相反应结构和组分研究[J]. Chin. J. Semicond., 1994, 15(8): 524...

用离子束辅助淀积多层薄膜技术合成Co－Si化合物薄膜的研究

杨杰，阎忻水，陶琨，范玉殿

Chin. J. Semicond. 1994, 15(8): 533-539

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 533.

杨杰，阎忻水，陶琨，范玉殿. 用离子束辅助淀积多层薄膜技术合成Co－Si化合物薄膜的研究[J]. Chin. J. Semicond., 1994, 15(8): 533..Export: BibTex EndNote

杨杰，阎忻水，陶琨，范玉殿. 用离子束辅助淀积多层薄膜技术合成Co－Si化合物薄膜的研究[J]. Chin. J. Semicond., 1994, 15(8): 533...

Ar~＋激光辐照对GaAs（100）表面硫钝化的影响

朱永强，张桂墙，蔡颂仪，郝炳权

Chin. J. Semicond. 1994, 15(8): 540-543

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 540.

朱永强，张桂墙，蔡颂仪，郝炳权. Ar~＋激光辐照对GaAs（100）表面硫钝化的影响[J]. Chin. J. Semicond., 1994, 15(8): 540..Export: BibTex EndNote

朱永强，张桂墙，蔡颂仪，郝炳权. Ar~＋激光辐照对GaAs（100）表面硫钝化的影响[J]. Chin. J. Semicond., 1994, 15(8): 540...

CoSi_2薄膜形成过程中的反应机制

何杰，顾诠，陈维德，许振嘉

Chin. J. Semicond. 1994, 15(8): 544-550

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 544.

何杰，顾诠，陈维德，许振嘉. CoSi_2薄膜形成过程中的反应机制[J]. Chin. J. Semicond., 1994, 15(8): 544..Export: BibTex EndNote

何杰，顾诠，陈维德，许振嘉. CoSi_2薄膜形成过程中的反应机制[J]. Chin. J. Semicond., 1994, 15(8): 544...

GTR电流增益的二维数值分析

高勇，赵旭东，陈治明

Chin. J. Semicond. 1994, 15(8): 551-557

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 551.

高勇，赵旭东，陈治明. GTR电流增益的二维数值分析[J]. Chin. J. Semicond., 1994, 15(8): 551..Export: BibTex EndNote

高勇，赵旭东，陈治明. GTR电流增益的二维数值分析[J]. Chin. J. Semicond., 1994, 15(8): 551...

晶体管非工作期失效率预计

杨家铿，翁寿松

Chin. J. Semicond. 1994, 15(8): 558-564

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 558.

杨家铿，翁寿松. 晶体管非工作期失效率预计[J]. Chin. J. Semicond., 1994, 15(8): 558..Export: BibTex EndNote

杨家铿，翁寿松. 晶体管非工作期失效率预计[J]. Chin. J. Semicond., 1994, 15(8): 558...

Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy

Yang Guowen, Xu Junying, Xiao Jianwei, Xu Zuntu, Zhang Jingmin, Zhang Wanhua, Zeng Yiping and Chen Lianhui

Chin. J. Semicond. 1994, 15(8): 565-568

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 565.

Y G wen, X J ying, X J wei, X Z tu, Z J min, Z W hua, Z Y ping and C L hui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. Chin. J. Semicond., 1994, 15(8): 565..Export: BibTex EndNote

Y G wen, X J ying, X J wei, X Z tu, Z J min, Z W hua, Z Y ping and C L hui. Extremely　low　threshold　current　density　strained　InGaAs／AlGaAs　quantum　well　lasers　by　molecular　beam　epitaxy[J]. Chin. J. Semicond., 1994, 15(8): 565...

多孔化PECVD硅薄膜的室温光致发光

王燕，廖显伯，潘广勤，孔光临

Chin. J. Semicond. 1994, 15(8): 569-572

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 569.

王燕，廖显伯，潘广勤，孔光临. 多孔化PECVD硅薄膜的室温光致发光[J]. Chin. J. Semicond., 1994, 15(8): 569..Export: BibTex EndNote

王燕，廖显伯，潘广勤，孔光临. 多孔化PECVD硅薄膜的室温光致发光[J]. Chin. J. Semicond., 1994, 15(8): 569...

离子辐照对多孔硅性质的影响

杨海强，阎锋，官浩，鲍希茂

Chin. J. Semicond. 1994, 15(8): 573-576

Abstract PDF Cited by ()

null. null[J]. Chin. Journal of Semiconductors, 1994, 15(8): 573.

杨海强，阎锋，官浩，鲍希茂. 离子辐照对多孔硅性质的影响[J]. Chin. J. Semicond., 1994, 15(8): 573..Export: BibTex EndNote

杨海强，阎锋，官浩，鲍希茂. 离子辐照对多孔硅性质的影响[J]. Chin. J. Semicond., 1994, 15(8): 573...

GaAs－Al_xGa_1－xAs异质结中二维热电子的负磁阻效应

程文超，朱景兵，李月霞，宋爱民，郑厚植

Chin. J. Semicond. 1994, 15(8): 577-582

Abstract PDF Cited by ()

null. [J]. Chin. Journal of Semiconductors, 1994, 15(8): 577.

程文超，朱景兵，李月霞，宋爱民，郑厚植. GaAs－Al_xGa_（1－x）As异质结中二维热电子的负磁阻效应[J]. Chin. J. Semicond., 1994, 15(8): 577..Export: BibTex EndNote

程文超，朱景兵，李月霞，宋爱民，郑厚植. GaAs－Al_xGa_（1－x）As异质结中二维热电子的负磁阻效应[J]. Chin. J. Semicond., 1994, 15(8): 577...

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